MOSFET N-CHANNEL 60V 60A Search Results

ISD 3000

Abstract: chengdu
Contextual Info: CPEC RX60N06 RX60N06 Silicon N Channel Power MOSFET Description The RX60N06 is n-channel enhancement mode trench power MOSFET with fast switching speed , low on-resistance. usually used at power switching application . Features •VDSS =60V ·ID =60A ·RDS on ＜7mΩ (VGS=10V)

p60nf06

Abstract: P60NF P60NF06 TO-220 STripFET P60NF*06 STP60NF06
Contextual Info: STP60NF06 STP60NF06FP N-channel 60V - 0.014Ω - 60A TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STP60NF06 60V <0.016Ω 60A STP60NF06FP 60V <0.016Ω 60A 3 3 • Exceptional dv/dt capability ■ 100% avalanche tested

p60nf06

Abstract: P60NF P60NF06 TO-220 P60NF*06 STP60NF06FP p60n p60nf0 NS414
Contextual Info: STP60NF06 STP60NF06FP N-channel 60V - 0.014Ω - 60A TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STP60NF06 60V <0.016Ω 60A STP60NF06FP 60V <0.016Ω 60A 3 3 • Exceptional dv/dt capability ■ 100% avalanche tested

MOSFET N-CHANNEL 60v 60A

Abstract: 60n06 60n06l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom

b60nf06

Abstract: B60NF JESD97 STB60NF06 STB60NF06-1 STB60NF06T4 diode k 0368
Contextual Info: STB60NF06 STB60NF06-1 N-channel 60V - 0.014Ω - 60A - D2PAK/I2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NF06-1 60V <0.016Ω 60A STB60NF06 60V <0.016Ω 60 3 • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization

p60nf06l

Abstract: P60NF p60nf06 b60nf06l b60nf06 B60NF smd diode L30 p60nf0 p60n p60nf06lfp
Contextual Info: STB60NF06L STP60NF06L - STP60NF06LFP N-channel 60V - 0.012Ω - 60A - TO-220/D2PAK/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NF06L 60V <0.014Ω 60 STP60NF06L 60V <0.014Ω 60A STP60NF06LFP 60V <0.014Ω 60A(1) 3 1. Refer to SOA for the max allowable current values on

p60nf06l

Contextual Info: STB60NF06L STP60NF06L - STP60NF06LFP N-channel 60V - 0.012Ω - 60A - TO-220/D2PAK/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NF06L 60V <0.014Ω 60 STP60NF06L 60V <0.014Ω 60A STP60NF06LFP 60V <0.014Ω 60A(1) 3 1. Refer to SOA for the max allowable current values on

b60nf06

Abstract: B60NF
Contextual Info: STB60NF06 STB60NF06-1 N-channel 60V - 0.014Ω - 60A - D2PAK/I2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NF06-1 60V <0.016Ω 60A STB60NF06 60V <0.016Ω 60 3 • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization

65NF06

Abstract: P65NF06 p65nf p65nf06 equivalents P65NF06 TO220 STP65NF06 p65nf0 STD65NF06 JESD97
Contextual Info: STD65NF06 STP65NF06 N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET II Power MOSFET General features • ■ Type VDSS RDS on ID STD65NF06 60V <14mΩ 60A STP65NF06 60V <14mΩ 60A Standard level gate drive 3 3 1 100% avalanche tested DPAK 1 2 TO-220

D60NF06

Contextual Info: STD60NF06 N-channel 60V - 0.014Ω - 60A - DPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD60NF06 60V <0.016Ω 60A • Exceptional dv/dt capability ■ Application oriented characterization ■ 100% avalanche tested 3 1 DPAK Description

schematic diagram 48v UPS

Abstract: schematic diagram 48V telecom ups equivalent stp60nf06 STP60NF06 schematic diagram 24v UPS STP60NF *p60nf06
Contextual Info: STP60NF06 N-CHANNEL 60V - 0.014Ω - 60A TO-220 STripFET POWER MOSFET TYPE STP60NF06 • ■ ■ ■ VDSS RDS on ID 60V < 0.016 Ω 60A TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

schematic diagram 48v UPS

Abstract: schematic diagram 24v UPS STB60NF06 DT400
Contextual Info: STB60NF06 N-CHANNEL 60V - 0.014Ω - 60A D2PAK STripFET POWER MOSFET TYPE STB60NF06 • ■ ■ ■ ■ VDSS RDS on ID 60V < 0.016 Ω 60A TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

STP60N

Abstract: *p60nf06
Contextual Info: STP60NF06 N-CHANNEL 60V - 0.014Ω - 60A TO-220 STripFET POWER MOSFET TYPE STP60NF06 • ■ ■ ■ VDSS RDS on ID 60V < 0.016 Ω 60A TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

schematic diagram 48v UPS

Abstract: schematic diagram 48V telecom ups STB60NF06 schematic diagram 24v UPS
Contextual Info: STB60NF06 N-CHANNEL 60V - 0.014Ω - 60A D2PAK STripFET POWER MOSFET TYPE STB60NF06 • ■ ■ ■ ■ VDSS RDS on ID 60V < 0.016 Ω 60A TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

schematic diagram 48v UPS

Abstract: schematic diagram 24v UPS schematic diagram 48V telecom ups STB60NF06
Contextual Info: STB60NF06 N-CHANNEL 60V - 0.014Ω - 60A D2PAK STripFET POWER MOSFET TYPE STB60NF06 • ■ ■ ■ ■ VDSS RDS on ID 60V < 0.016 Ω 60A TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

b60ne

Abstract: B60NE06L STB60NE06L-16T4 B60NE06
Contextual Info: STB60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature

B60NE06L

Abstract: b60ne JESD97 STB60NE06L-16 STB60NE06L-16T4
Contextual Info: STB60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature

p60nf06

Abstract: P60NF0
Contextual Info: STP60NF06 N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type VDSS RDS on ID STP60NF06 60V <0.016Ω 60A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization 1 2 3 TO-220

p60nf06

Abstract: P60NF P60NF06 TO-220 p60nf0 P60NF*06 *p60nf06 P60*nf06 p60n STP60NF061 STP60NF06
Contextual Info: STP60NF06 N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type VDSS RDS on ID STP60NF06 60V <0.016Ω 60A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization 3 1 2 TO-220

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP9972 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UP9972 is an N-ch enhancement mode Power MOS Field Effect Transistor using advanced technology to provide fast speed switching, low on-resistance and perfect cost-effectiveness.

n-channel, 60v, 60a

Abstract: TO263-2L mosfet 20v 30A 60a LOGIC N-Channel MOSFET bridge diode 60a power switching ST6006 ST6006S ST6006T220RG ST6006T220TG
Contextual Info: N Channel Enchancement Mode MOSFET ST6006S / ST6006 60V/60A DESCRIPTION The ST6006 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This ST6006 is densigned to withstand high energy in the avalanche and commutation modes.

p60nf06

Contextual Info: STP60NF06FP N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STP60NF06FP 60V <0.016Ω 30A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization 3 1 2 TO-220FP

P60NF06

Abstract: P60NF p60nf0 P60NF*06 P60*nf06 STP60NF06FP STP60 *p60nf06 p60n STripFET
Contextual Info: STP60NF06FP N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STP60NF06FP 60V <0.016Ω 30A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization 3 1 2 TO-220FP

RFG60P06E

Contextual Info: RFG60P06E S E M I C O N D U C T O R 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET January 1996 Features Package • 60A, 60V JEDEC STYLE TO-247 SOURCE DRAIN GATE • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model