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    P60N Search Results

    P60N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NP60N03SUG-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP60N055KUG-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP60N055VUK-E2-AY Renesas Electronics Corporation Nch Single Power MOSFET 55V 60A 5.5mohm MP-3ZP/TO-252 Automotive Visit Renesas Electronics Corporation
    NP60N03SUG-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP60N04VDK-E1-AY Renesas Electronics Corporation 40 V – 60 A – N-channel Power MOS FET Visit Renesas Electronics Corporation
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    P60N Price and Stock

    Renesas Electronics Corporation NP60N055VUK-E1-AY

    MOSFET N-CH 55V 60A TO252-3
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    DigiKey NP60N055VUK-E1-AY Digi-Reel 7,973 1
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    NP60N055VUK-E1-AY Cut Tape 7,973 1
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    NP60N055VUK-E1-AY Reel 7,500 2,500
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    Avnet Americas NP60N055VUK-E1-AY Reel 18 Weeks 2,500
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    Mouser Electronics NP60N055VUK-E1-AY 2,490
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    Rochester Electronics NP60N055VUK-E1-AY 100 1
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    Avnet Asia NP60N055VUK-E1-AY 18 Weeks 2,500
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    Renesas Electronics America NP60N055VUK-E1-AY Tape & Reel (TR) 7,973 1
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    Renesas Electronics Corporation NP60N04VUK-E1-AY

    MOSFET N-CH 40V 60A TO252
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    DigiKey NP60N04VUK-E1-AY Cut Tape 4,199 1
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    Renesas Electronics Corporation NP60N06VLK-E1-AY

    P-TRS2 AUTOMOTIVE MOS
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    DigiKey NP60N06VLK-E1-AY Digi-Reel 3,222 1
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    NP60N06VLK-E1-AY Cut Tape 3,222 1
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    NP60N06VLK-E1-AY Reel 2,500 2,500
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    Avnet Americas NP60N06VLK-E1-AY Reel 18 Weeks 2,500
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    Mouser Electronics NP60N06VLK-E1-AY 2,485
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    Renesas Electronics Corporation NP60N04VLK-E1-AY

    P-TRS2 AUTOMOTIVE MOS
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    DigiKey NP60N04VLK-E1-AY Cut Tape 2,498 1
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    Avnet Americas NP60N04VLK-E1-AY Reel 18 Weeks 2,500
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    Renesas Electronics America NP60N04VLK-E1-AY Tape & Reel (TR) 2,498 1
    • 1 $1.95
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    STMicroelectronics STP60NF06

    MOSFET N-CH 60V 60A TO220AB
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    DigiKey STP60NF06 Tube 1,071 1
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    Avnet Americas STP60NF06 Tube 26 Weeks 2,000
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    Mouser Electronics STP60NF06 2,457
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    STMicroelectronics STP60NF06 2,457 1
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    TME STP60NF06 353 1
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    Avnet Silica STP60NF06 45,650 17 Weeks 50
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    EBV Elektronik STP60NF06 8,950 27 Weeks 50
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    Win Source Electronics STP60NF06 27,119
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    P60N Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    P60NH2LL STMicroelectronics N-channel 24V - 0.010ohm - 40A TO-220 STripFET Power MOSFET Original PDF
    P60NS04ZB STMicroelectronics N-channel clamped - 10mohm - 60A - TO-220 Fully protected Mesh Overlay Power MOSFET Original PDF

    P60N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P60ne

    Abstract: P60NE0 P60NE03L-10 p60n P60NE03 STP60NE03L-10 P60NE03L-1
    Text: P60NE03L-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET T YPE V DSS R DS o n ID ST P60NE03L-10 30 V < 0.010 Ω 60 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.007 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC


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    PDF STP60NE03L-10 P60NE03L-10 O-220 P60ne P60NE0 P60NE03L-10 p60n P60NE03 STP60NE03L-10 P60NE03L-1

    p60ne06l-16

    Abstract: P60NE0 P60ne p60ne06 p60ne06l p60n
    Text: P60NE06L-16  N - CHANNEL 60V - 0.014 Ω - 60A - D2PAK ”SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST P60NE06L-16 60 V <0.016 Ω 60 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.014 Ω AVALANCE RUGGED TECHNOLOGY


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    PDF STP60NE06L-16 P60NE06L-16 175oC p60ne06l-16 P60NE0 P60ne p60ne06 p60ne06l p60n

    P60N06

    Abstract: P60N06-14 p60n05 P60N05-14 p60n P60n0 STP60N05-14 STP60N06-14 stp60n06
    Text: P60N05-14 P60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA T YPE ST P60N05-14 ST P60N06-14 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS o n ID 50 V 60 V < 0.014 Ω < 0.014 Ω 60 A 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY


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    PDF STP60N05-14 STP60N06-14 P60N05-14 P60N06-14 100oC O-220 P60N06 P60N06-14 p60n05 P60N05-14 p60n P60n0 STP60N05-14 STP60N06-14 stp60n06

    DC MOTOR CONTROL curcuit

    Abstract: res 0207 F-ZTAT MAT-4 TQFP80E Nippon capacitors TOP MARK H4B
    Text: REJ09B0310-0100 16 H8S/2125 Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2125 Rev.1.00 Revision Date: Sep. 21, 2006 R4F2125 R4P2125 Rev. 1.00 Sep. 21, 2006 Page ii of xxxviii Keep safety first in your circuit designs!


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    PDF REJ09B0310-0100 H8S/2125 16-Bit H8S/2100 H8S/2125 R4F2125 R4P2125 nonflamma730-6071 DC MOTOR CONTROL curcuit res 0207 F-ZTAT MAT-4 TQFP80E Nippon capacitors TOP MARK H4B

    RSN 315 H 42

    Abstract: RSN 314 H 41 rsn 315 LADR2 RSN 310 R 36 rsn 313 HFD27 HFD23 addressing modes 8086 AY 5 4700
    Text: REJ09B0429-0100 16 H8S/2164 Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2400 Series H8S/2164 Rev.1.00 Revision Date: Mar. 17, 2008 R4F2164 Rev. 1.00 Mar. 17, 2008 Page ii of xl Notes regarding these materials 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate


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    PDF REJ09B0429-0100 H8S/2164 16-Bit H8S/2400 H8S/2164 R4F2164 RSN 315 H 42 RSN 314 H 41 rsn 315 LADR2 RSN 310 R 36 rsn 313 HFD27 HFD23 addressing modes 8086 AY 5 4700

    p60n

    Abstract: JESD97 P60NH2LL STP60NH2LL
    Text: P60NH2LL N-channel 24V - 0.010Ω - 40A TO-220 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID P60NH2LL 24V <0.011Ω 40A(1) 1. Value limited by wire bonding • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced


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    PDF STP60NH2LL O-220 STP60NH2LL P60NHand p60n JESD97 P60NH2LL

    P60NF

    Abstract: P60NF10 MOSFET P60NF10 P60NF10 mosfet STP60NF10 mosfet morocco
    Text: P60NF10 N-CHANNEL 100V - 0.019 W - 80A TO-220 STripFET II POWER MOSFET Uhiyrà ÃBrr…hyÃArh‡ˆ…r† VDSS TYPE P60NF10 • ■ ■ 100 V Avtˆ…rà )Package RDS on) < 0.023 W ID 80 A TYPICAL RDS(on) = 0.019 W EXTREMELY HIGHL dv/dt CAPABILITY 100% AVALANCHE TESTED


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    PDF STP60NF10 O-220 P60NF P60NF10 MOSFET P60NF10 P60NF10 mosfet STP60NF10 mosfet morocco

    NEC B1100

    Abstract: ADE-702-231 HD64F2166 HD64F2167 HD64F2168 SCR TRANSISTOR Inductive current sensor of measurement Nippon capacitors
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF H8S/2168Group REJ09B0078-0300Z NEC B1100 ADE-702-231 HD64F2166 HD64F2167 HD64F2168 SCR TRANSISTOR Inductive current sensor of measurement Nippon capacitors

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    P60NF03

    Abstract: P60NF p60nf0 p60nf03l STP60NF03L
    Text: P60NF03L N-channel 30V - 0.008Ω - 60A TO-220 STripFET Power MOSFET General features • Type VDSS RDS on ID P60NF03L 30V <0.01Ω 60A Low threshold drive Description 1 This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"


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    PDF STP60NF03L O-220 P60NF03L P60NF03 P60NF p60nf0 p60nf03l STP60NF03L

    P60NF10

    Abstract: P60NF
    Text: STB60NF10 STB60NF10-1 - P60NF10 N-channel 100V - 0.019Ω - 80A - TO-220 - D2PAK - I2PAK STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STB60NF10 100V <0.023Ω 80A STB60NF10-1 100V <0.023Ω 80A P60NF10 100V <0.023Ω 80A 3


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    PDF STB60NF10 STB60NF10-1 STP60NF10 O-220 STB60NF10-1 O-220 P60NF10 P60NF

    NEC 78F0886

    Abstract: PD78F0887 78F0886 PD78F0884 78F0890 78F0892 78F0888 78F0893 78F0889 78F0885
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF G0706 NEC 78F0886 PD78F0887 78F0886 PD78F0884 78F0890 78F0892 78F0888 78F0893 78F0889 78F0885

    P60N03LDG

    Abstract: P60N03LD
    Text: シングル N チャンネル MOSFET ELM32422LA-S •概要 ■特長 ELM32422LA-S は低入力容量 低電圧駆動、 低 ・ Vds=25V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=60A ・ Rds on < 13.8mΩ (Vgs=10V) ・ Rds(on) < 17.8mΩ (Vgs=7V)


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    PDF ELM32422LA-S P60N03LDG O-252 OCT-27-2005 ModeELM32422LA-S P60N03LDG P60N03LD

    F2116BG20V

    Abstract: R4F2116 OF798 Nippon capacitors
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF H8S/2116 F2116BG20V R4F2116 OF798 Nippon capacitors

    HF99

    Abstract: NS102 NEC 2561 inductive proximity sensor pj5n PJ6N PJ 956 PE 4100 Nippon capacitors pci express tlp
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF H8S/2117R REJ09B0452-0200 HF99 NS102 NEC 2561 inductive proximity sensor pj5n PJ6N PJ 956 PE 4100 Nippon capacitors pci express tlp

    p60ne06

    Abstract: P60NE0 P60ne Part Marking TO-220 STMicroelectronics STP60NE06-16 p60n STP60NE06 STP60NE06-16FP P60NE06FP
    Text: P60NE06-16 P60NE06-16FP N-CHANNEL 60V - 0.013 Ω - 60A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID P60NE06-16 60 V < 0.016 Ω 60 A P60NE06-16FP 60 V < 0.016 Ω 35 A FEATURES SUMMARY


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    PDF STP60NE06-16 STP60NE06-16FP O-220/TO-220FP p60ne06 P60NE0 P60ne Part Marking TO-220 STMicroelectronics STP60NE06-16 p60n STP60NE06 STP60NE06-16FP P60NE06FP

    ELM32422LA

    Abstract: P60N03LDG P60N03LD P60n03 p60n03l ELM32422LA-S
    Text: 单 N 沟道 MOSFET ELM32422LA-S •概要 ■特点 ELM32422LA-S 是 N 沟道低输入电容,低工作电压, •Vds=25V 低导通电阻的大电流 MOSFET。 ·Id=60A ·Rds on < 13.8mΩ (Vgs=10V) ·Rds(on) < 17.8mΩ (Vgs=7V) ■绝对最大额定值


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    PDF ELM32422LA-S P60N03LDG O-252 OCT-27-2005 ELM32422LA P60N03LDG P60N03LD P60n03 p60n03l ELM32422LA-S

    scr tic 106 ac

    Abstract: data shed diode BA 159 free scr tic 106 ade 3800 capacitive proximity sensor DA6 marking code datasheet 346 766 Nippon capacitors
    Text: REJ09B0223-0200 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2189RGroup Hardware Manual


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    PDF REJ09B0223-0200 H8S/2189RGroup 16-Bit H8S/2100 H8S/2189R R4F2189R Unit2607 H8S/2189R scr tic 106 ac data shed diode BA 159 free scr tic 106 ade 3800 capacitive proximity sensor DA6 marking code datasheet 346 766 Nippon capacitors

    F2117LP

    Abstract: PJ6N pj5n pj7n 213 1300 PJ3N r4f2117 F2117 KD 502 KBU 106
    Text: REJ09B0350-0200 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2117Group Hardware Manual


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    PDF REJ09B0350-0200 H8S/2117Group 16-Bit H8S/2100 H8S/2117 R4F2117 H8S/2117 F2117LP PJ6N pj5n pj7n 213 1300 PJ3N r4f2117 F2117 KD 502 KBU 106

    P60N06

    Abstract: P60N06-14 m p60n06 SMP60N06-14
    Text: Tem ic P60N06-14 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary VDS V r DS(on) (S2) I d (A ) 60 0.014 60 See lower-cost version: SU P60N06-14 D Q TQ-220AB o DRAIN connected to TAB Ô S Top View N-Channel MOSFET


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    PDF SMP60N06-14 P60N06-14 TQ-220AB P-36737--Rev. P60N06 P60N06-14 m p60n06 SMP60N06-14

    P50N05

    Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
    Text: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2


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    PDF BUZ11 BUZ11A BUZ20 BUZ21 BUZ71 BUZ71A TP50N06E MTP50M P50N05 P50N06 P50N05 p50n06 TP3055EL tp50n05e MTP36N06E

    DATA VISION P 129-1 LCD

    Abstract: DATA VISION LCD MODULE p34 DATA VISION LCD P70 DATA VISION LCD P72 DATA VISION LCD MODULE p70, DATA VISION LCD P60 P60NO D76064 PD780913 d78098
    Text: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The /iPD78P0914 is a product of 78K/0 series, in which the on-chip mask ROM of the /xPD780913 is replaced by one-time PROM or by EPROM. As program write by user is possible, the /iPD78P0914 is best suited forevaluation, short-run and multiple-device


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    PDF uPD78P0914 78K/0 uPD780913 /iPD78P0914 PD780913 IEU-1372 iPD78P0914KL-R: b427555 Q0B2b32 DATA VISION P 129-1 LCD DATA VISION LCD MODULE p34 DATA VISION LCD P70 DATA VISION LCD P72 DATA VISION LCD MODULE p70, DATA VISION LCD P60 P60NO D76064 d78098

    laptop battery diagram schematic

    Abstract: p60n05 laptop ic list DMOS FET p60n
    Text: Application Hint 05 Logic Controlled Power Switch by Bob Wolbert Introduction In battery powered applications, such as laptop computers, power control has a m ajor im pact on battery life. For example, laptop or notebook com puters often have a “sleep”


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    PDF 1000pF 10OOpF MIC5011 laptop battery diagram schematic p60n05 laptop ic list DMOS FET p60n

    SUB60N06-14

    Abstract: p60n
    Text: Tem ic SUP/SUB60N06-14 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) Id r DS(on) (S2) 60 0.014 (A) 603 D T 0-220A B O o T O -263 o D R A IN con n ected to TA B G D S Top View G D S SU B60N 06-14


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    PDF SUP/SUB60N06-14 -220A SUB60N06-14 p60n