MOSFET P-CH 250V 5A Search Results

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

FS10UMA-5A

Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET ARY FS10UMA-5A FS10UMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10UMA-5A OUTLINE DRAWING

Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET ARY FS3KMA-5A FS3KMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS3KMA-5A OUTLINE DRAWING

Contextual Info: bSE f f CH} l S S i s SEMICONDUCTOR " " N 2 7 2 7 D , HARRIS SEMICOND SECTOR REGISTRATION PENDING Currently Available as FRS234 D, R, H 2 N 7 2 7 9 R 2 N 7 2 7 9 H Radiation Hardened N-Channel Power MOSFETs June1993 Package Features • 9 5A.250V, RDS(on)-0.715Q

Contextual Info: MITSUBISHI Neh POWER MOSFET FS1OVS-5 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm •st q w e ■V 6 +i CD Q w r oj q w e r GATE DRAIN SOURCE DRAIN V d s s . 250V rDS ON (MAX). 0.52Í2

TFK u 269

Abstract: tfk 731 2SK1917-MR T151 3 TFK 140 TFK diode
Contextual Info: 2SK1917-MR FUJI POWER MOS-FET N-CMANIMEL SILICON POWER MOS-FET F -II SERIES • Features ■ Outline Drawings • Hich speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • VGS—+ 30V Guarantee ■ Applications

str f 6467

Abstract: STR 6467 2SK191 9vtfr 2SK1917-MR T151
Contextual Info: 2SK1917-MR FUJI POWER MOS-FET N-CMANIMEL SILICON POWER MOS-FET F -II SERIES • Features ■ Outline Drawings • Hich speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • VGS—+ 30V Guarantee ■ Applications

2SK1917-M

Contextual Info: 2SK1917-M SIPMOS FU JI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET ^ • Features SERIES ■ Outline Drawings • High speed sw itching • Low on-resistance • N o secondary breakdow n • Low driving pow er • High voltage • V gs = ± 3 0 V Guarantee

FK10KM-12

Abstract: P channel MOSFET 10A
Contextual Info: MITSUBISHI Nch POWER MOSFET FK10KM-12 HIGH-SPEED SWITCHING USE FK10KM-12 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡VDSS . 600V

erse rds 80

Abstract: 2SK2051 2SK2051-L M111
Contextual Info: 2SK2051-L. S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F • Features - I I S E R I E S Outline Drawings • H igh speed s w itch in g • Lew o n-resistance • No secondary bre akd ow n • Lew d riving p ow er • High vo ltag e • V S= ± 3 0 V Guarantee

SDF420

Abstract: D25A
Contextual Info: Æ ntron PRODUCT DEVICES,INC. CÂTÂLO' N -CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 500V, SYMBOL UNITS Drain-source Volt. l Dra in-Gate Vo 1tage (R gs = 1•O M n ) (1) G a te-Souree Vo 1tage Cont inuous Drain Current Continuous (Tc = 25°C)

class D 500W irs2092

Abstract: 500w class d circuit diagram schematics AMP7S-200 IRS2092 pcb IRS2092 250w audio amplifier circuit diagram IRS2092 audio amplifier circuit diagram 500w power amplifier pcb diagram IRS2092 power amplifier circuit diagram with pcb IRS2092SPBF
Contextual Info: IRAUDAMP7S 25W-500W Scalable Output Power Class D Audio Power Amplifier Reference Design Using the IRS2092 Protected Digital Audio Driver By Jun Honda, Manuel Rodríguez, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of

500w class d circuit diagram schematics

Abstract: IRS2092 schematic diagram PWM inverter 500w IRS2092 power amplifier circuit diagram with pcb IRS2092 audio amplifier circuit diagram IRAUDAMP7S 7G17A-220M-R 500w power amplifier stereo irs2092s schematic diagram inverter 500w USING MOSFET
Contextual Info: IRAUDAMP7S 25W-500W Scalable Output Power Class D Audio Power Amplifier Reference Design Using the IRS2092S Protected Digital Audio Driver By Jun Honda, Manuel Rodríguez, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of

AMP7S-100

Abstract: diode z104 IRAUDAMP7S-150 7G17A-220MR IRAUDAMP7S-100 inverter 12v to 220 ac mosfet based
Contextual Info: IRAUDAMP7S 25W-500W Scalable Output Power Class D Audio Power Amplifier Reference Design Using the IRS2092S Protected Digital Audio Driver By Jun Honda, Manuel Rodríguez, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of

DIODE KIV 4

Abstract: DIODE KIV 074I K1393 diode KIV 41 2SK1393 F10V25 DIODE KIV 2
Contextual Info: LVXS/'J-X M7-M0SFET LVX SERIES POWER MOSFET WM-j-iim O U T L IN E D IM E N S IO N S 2SK1393 F10V25 250v 10a • Æ fê S i R A TIN G S ■ A b s o lu te M axim u m R a tin g s m Ite m g ft y- S to ra g e T e m p e ra tu re Tsit; C h annel T e m p e ra tu re

CFL UPS 45 W

Contextual Info: 2SK1917-MR FUJI POWER MOS-FET N-CNANNEL SILICON POWER MOS-FET F - I I • Features S E R I E S ■ Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gs = ± 3 0 V Guarantee

TP2350B

Abstract: J200 mosfet tp2350 TRIPATH TC2001 TK2350 2 speakers 1 crossover amplifier pcb RB-TK2350-2 MURS120T Tripath Amplifier Tripath Technology
Contextual Info: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on RB-TK2350-1 RB-TK2350-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Revision 2.2 November 2004 GENERAL DESCRIPTION The RB-TK2350 reference board is based on the TK2350 digital audio power amplifier chipset from

Contextual Info: PRODUCT CATTALO' N-CHANNEL ENHANCEMENT MOS 500V, 4.5A, 1.5Q SDF430 SDF430 SDF430 JAA JAB JDA FEATURES • RUGGED PACKAGE • HI-REL CONSTRUCTION • CERAMIC EYELETS:J A A .JAB • L E A D BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • LOW IR LOSSES • LOW THERMAL RESISTANCE

diode lt 246

Abstract: 1RFP245
Contextual Info: IRFP244, IRFP245 IRFP246, IRFP247 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated A u g u s t 1991 Package Features T O -2 4 7 TOP VIEW • 15A and 14A, 275V - 250V • rDS on = 0 .2 8 0 and 0 .3 4 ft D RAIN (T A B ) • Single Pulse Avalanche Energy Rated

2sk1221

Abstract: IR LFN T151
Contextual Info: 2SK1221 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-II • Features SERIES lOutline Drawings • Hich speed switching • Low orvresistance ,4 .5 * « • No secondary breakdown 05.6*^ 10*$^ '"'i R-“< M | • Low driving power i • Hich voltage

Contextual Info: ADP1043A Evaluation Board Forward Active Clamp PRD 1168 Reference Design FEATURES Forward Active Clamp with Synchronous rectifier Voltage Feedback Loop Dimensions: 58.4mmx61mm×12mm Half Brick Input Voltage Range: -34V to -60V DC Output Voltage/Current: 18V/6A DC

Contextual Info: 2SK2051-L.S FUJI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET -F - I I • F eatures ■ Outline Drawings • High speed switching • Lew on-resistance • No secondary breakdown

MOSFET 20 NE 50 Z

Abstract: 2SK2051 2SK2051-L 43ti
Contextual Info: 2SK2051-L. S FUJI POW ER M OS-FET N-CHANNEL SILICON POWER MOS-FET F - I I • F eatures S E R I E S Outline Drawings • High speed switching • Lew on-resistance • No secondary breakdown • Lew driving power • High voltage • V S = ±30V Guarantee

Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical