MOSFET P-CHANNEL 10A IRF Search Results
MOSFET P-CHANNEL 10A IRF Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P |
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TK2R4A08QM |
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MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS |
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XPN1300ANC |
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N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) |
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TK190U65Z |
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MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL |
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TK7R0E08QM |
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MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB |
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MOSFET P-CHANNEL 10A IRF Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PD - 96146 IRF7701GPbF l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel Lead-Free Halogen-Free VDSS -12V RDS(on) max ID 0.011@VGS = -4.5V 0.015@VGS = -2.5V -10A |
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IRF7701GPbF F7701G | |
MOSFET 700V 10A
Abstract: EIA-541 IRF7701 IRF7702
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IRF7701 G252-7105 MOSFET 700V 10A EIA-541 IRF7701 IRF7702 | |
EIA-541
Abstract: IRF7702 M0153
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IRF7701PbF IRF7702 EIA-481 EIA-541. EIA-541 IRF7702 M0153 | |
Contextual Info: IRF740 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features VDSS @Tjmax Type RDS(on) ID ) s ( t c u d o ) r s ( P t c Description e t u e d l o o r s Internal schematic diagram P b e O t e l ) o s ( s t b Applications c u O |
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IRF740 O-220 | |
IRF P CHANNEL MOSFET 200V 20A
Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
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RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252 | |
irfb4019
Abstract: PN channel MOSFET 10A highly efficient class d audio amplifier 200W highly efficiency Amplifier IRFB4019PBF
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IRFB4019PbF O-220AB O-220AB irfb4019 PN channel MOSFET 10A highly efficient class d audio amplifier 200W highly efficiency Amplifier IRFB4019PBF | |
Irfb4019Contextual Info: PD - 97075 IRFB4019PbF DIGITAL AUDIO MOSFET Features Key Parameters • Key Parameters Optimized for Class-D Audio VDS 150 RDS ON typ. @ 10V 80 V m: • Low RDSON for Improved Efficiency Qg typ. 13 nC • Low QG and QSW for Better THD and Improved Qsw typ. |
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IRFB4019PbF O-220AB O-220AB Irfb4019 | |
irf740 spice model
Abstract: IRF740
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OCR Scan |
SS452 IRF740 IRF74Ã IRF742 IRF743 T0-220AB IRF741 C-299 irf740 spice model IRF740 | |
PN channel MOSFET 10A
Abstract: digital audio mosfet irfb4019
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IRFB4019PbF O-220AB IRF1010 O-220AB PN channel MOSFET 10A digital audio mosfet irfb4019 | |
Contextual Info: IRFB4019PBF TO-220AB D Features G • Key Parameters Optimized for Class-D Audio Amplifier Applications S • Low RDSON for Improved Efficiency • Low QG and QSW for Better THD and Improved Efficiency Key Parameters • Low QRR for Better THD and Lower EMI |
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IRFB4019PBF O-220AB O-220AB IRF1010 | |
742r
Abstract: F740 F742 F741 742-R IRF P CHANNEL MOSFET 10a
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OCR Scan |
F740/741/742/743 IRF740R/741R/74 IRF740, IRF741, IRF742, IRF743 IRF740R, IRF741R, IRF742R IRF743R 742r F740 F742 F741 742-R IRF P CHANNEL MOSFET 10a | |
Td 68Contextual Info: IRFZ24NS/NL Power MOSFET VDSS = 55V, RDS on = 0.07 mohm, ID = 17 A D G S Symbol N Channel ELECTRICAL CHARACTERISICS at Parameter Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current |
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IRFZ24NS/NL -20VDC 55VDC, 44VDC, 20VDC 10VDC, 10VDC Td 68 | |
Contextual Info: IRFZ44NS/NL Power MOSFET VDSS = 55V, RDS on = 0.0175 ohm, ID = 49 A D G S Symbol N Channel ELECTRICAL CHARACTERISICS at Parameter Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current |
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IRFZ44NS/NL -20VDC 55VDC, 44VDC, 20VDC 10VDC, 10VDC | |
LR 2703
Abstract: capacitor .47mf capacitor 47MF lr2703 panasonic diode capacitor 47MF 16v D05022P D05022P-332HC D03316p-102 capacitor 12v 33MF
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IRDC3046 IRU3046 in-15) in-14) in-10) in-11) LR 2703 capacitor .47mf capacitor 47MF lr2703 panasonic diode capacitor 47MF 16v D05022P D05022P-332HC D03316p-102 capacitor 12v 33MF | |
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LTC4352
Abstract: lt 0210 ORing fet 48v 5a DE14 FDB3632 LN1351C MBR10100 ZENER DIODE 1.23V 7A, 100v fast recovery diode IRLR3110
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LTC4355 14-Lead 16-Lead LTC4355, LTC4352 LTC4354 LTC4357 LTC4358 4355fe LTC4352 lt 0210 ORing fet 48v 5a DE14 FDB3632 LN1351C MBR10100 ZENER DIODE 1.23V 7A, 100v fast recovery diode IRLR3110 | |
LT4352
Abstract: 1000 volt mosfet mosfet irf3710 TRANSZORB 24v DE14 FDB3632 LN1351C MBR10100 IRF3710
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LTC4355 14-Lead 16-Lead LTC4355, LT4352 LTC4354 LTC4357 LTC4358 4355fd LT4352 1000 volt mosfet mosfet irf3710 TRANSZORB 24v DE14 FDB3632 LN1351C MBR10100 IRF3710 | |
Contextual Info: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.3µs Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V |
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LTC4355 14-Lead 16-Lead LTC4355, LTC4352 LTC4354 LTC4357 LTC4358 4355fe | |
LTC4357Contextual Info: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.5 s Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V |
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LTC4355 LTC4355, 10-Bit 4355fb LTC4357 | |
N-CHANNEL MOSFET 30V 2A SOT-23 MON
Abstract: ORing fet 48v 5a 24v in 5v 10A OUT DE14 FDB3632 LN1351C MBR10100 LTC4261 LTC4358 CM4Z669-LTC
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LTC4355 14-Lead 16-Lead LTC4355, LT4351 LTC4354 LTC4357 LTC4358 4355fc N-CHANNEL MOSFET 30V 2A SOT-23 MON ORing fet 48v 5a 24v in 5v 10A OUT DE14 FDB3632 LN1351C MBR10100 LTC4261 LTC4358 CM4Z669-LTC | |
2SK2639-01Contextual Info: F U J I ü^iUMarü^uis 2SK2639-01 N-channel MOS-FET 450V 0,65Q 10A 1 0 0 W FAP-IIS Series > Features - Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated |
OCR Scan |
2SK2639-01 | |
Contextual Info: Data Sheet No. PD94251 IRU3046 DUAL SYNCHRONOUS PWM CONTROLLER WITH CURRENT SHARING CIRCUITRY AND LDO CONTROLLER PRELIMINARY DATA SHEET FEATURES DESCRIPTION Dual Synchronous Controller in 24-Pin Package with 1808 out-of-phase operation LDO Controller with Independent Bias Supply |
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PD94251 IRU3046 24-Pin 400KHz 500mA IRU3046 | |
L1218
Abstract: C2660 R16-R21 PD94251 erj-m1wsf5mou ECJ2VC1H471J REGULATOR sr7 2003p
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PD94251 IRU3046 24-Pin 400KHz 500mA IRU3046 L1218 C2660 R16-R21 PD94251 erj-m1wsf5mou ECJ2VC1H471J REGULATOR sr7 2003p | |
Contextual Info: Data Sheet No. PD94251 IRU3046 DUAL SYNCHRONOUS PWM CONTROLLER WITH CURRENT SHARING CIRCUITRY AND LDO CONTROLLER PRELIMINARY DATA SHEET FEATURES DESCRIPTION Dual Synchronous Controller in 24-Pin Package with 1808 out-of-phase operation LDO Controller with Independent Bias Supply |
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PD94251 IRU3046 24-Pin 400KHz 500mA IRU3046 | |
200-400kHz
Abstract: 16TPB47M 1N4148 6TPB330M BAT54 DO5022HC IRU3046 IRU3046CF D03316p-102 c2660
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PD94251 IRU3046 24-Pin 400KHz 500mA 200-400kHz 16TPB47M 1N4148 6TPB330M BAT54 DO5022HC IRU3046 IRU3046CF D03316p-102 c2660 |