MOTOROLA 2N50 Search Results

2N5061

Abstract: 2n5060 thyristor 2N5060 MOTOROLA 2N5064 2N5062 2N5060 2N5060-D Motorola 2n5060 2N5061/2N5062 2n5062 datasheet free download
Contextual Info: MOTOROLA Order this document by 2N5060/D SEMICONDUCTOR TECHNICAL DATA 2N5060 2N5061 2N5062 * 2N5064 * Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors *Motorola preferred devices . . . Annular PNPN devices designed for high volume consumer applications such as

MJ2955 replacement

Abstract: BU108 2SA1046 MJE172 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5038* 2N5039 NPN Silicon Transistors *Motorola Preferred Device . . . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide–band amplifiers and power oscillators in

mc34063 solar charger

Abstract: 500MHz Frequency Counter Using MECL MC34063 Boost MOSFET Motorola AN220 FETs in Chopper and Analog 12v to 1000v inverters circuit diagrams MC1466 mc34063 step up with mosfet eb407 motorola AN485 MC34063 step down application notes
Contextual Info: SCG Application Notes Guide Application Notes, Article Reprints, Engineering Bulletins BR1522/D Rev. 0, 5/1999 Mfax is a trademark of Motorola, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation

transistor MW 882

Abstract: BC107 equivalent transistors BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBF2201NT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s

BC237

Abstract: IRFD110
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBF2201NT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s

2n5039

Abstract: 2n5038 2N5038 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5038* 2N5039 NPN Silicon Itransistors "Motorola Preferred Device . . . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, w ide-band amplifiers and power oscillators in

2n5087

Abstract: 2n5086
Contextual Info: MOTOROLA Order this document by 2N5086/D SEMICONDUCTOR TECHNICAL DATA 2N5086 2N5087* Amplifier Transistors PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 50

MPS3905

Abstract: 2N5086 2N5087 2n5087 motorola MPS3906
Contextual Info: MOTOROLA Order this document by 2N5086/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5086 2N5087* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor 2N5087 PNP Silicon COLLECTOR 3 Motorola Preferred Device 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage VCBO 50

2N5087

Abstract: AN-569
Contextual Info: MOTOROLA Order this document by 2N5087/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistor PNP Silicon 2N 50 87 COLLECTOR 3 Motorola Preferred Device 2 / base " 1 EMITTER 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Em itter Voltage VCEO 50 Vdc

2N5038

Abstract: 2N5039 1N4933
Contextual Info: MOTOROLA Order this document by 2N5038/D SEMICONDUCTOR TECHNICAL DATA 2N5038* 2N5039 NPN Silicon Transistors *Motorola Preferred Device . . . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide–band amplifiers and power oscillators in

2N5087

Abstract: transistor 2N5086
Contextual Info: MOTOROLA Order this document by 2N5087/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor 2N5087 PNP Silicon COLLECTOR 3 Motorola Preferred Device 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage

BD139

Abstract: BU108 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 2N6056* Darlington Complementary Silicon Power Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE COMPLEMENTARY

AMPLIFIER 2SD718 2sb688 schematic

Abstract: MJ900 2SD718 2sb688 amplifier schematic 2SC1419 2SA94 2SA124 2SD331 2SC1116 IR403 2SC2250
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ1000 MJ1001* Medium-Power Complementary Silicon Transistors *Motorola Preferred Device . . . for use as output devices in complementary general purpose amplifier applications. 10 AMPERE DARLINGTON POWER TRANSISTORS

TIP48 NPN

Abstract: BU108 BU326 BU100 BD801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP47 * TIP49* TIP48 * TIP50* High Voltage NPN Silicon Power Transistors . . . designed for line operated audio output amplifier, Switchmode power supply drivers and other switching applications. *Motorola Preferred Device

2SA1046

Abstract: BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS

2Sd331 npn transistor

Abstract: 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD122* PNP MJD127* Complementary Darlington Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS

BU108

Abstract: BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •

2n3819 replacement

Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device

BC237

Abstract: MAD1103P msc2295 MPS41 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS70LT1 Preliminary Information Schottky Barrier Diodes Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces

MJ802 EQUIVALENT

Abstract: 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16110* MJW16110*  Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. •

Transistor 2N2905A

Abstract: BC237 BC857A transistor BC238B sot23 transistor marking y2
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Schottky Barrier Diodes MMBD717LT1 Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces

motorola an569 thermal

Abstract: 2N5087 motorola an569
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Tran sistor PNP Silicon 2N5087 COLLECTOR 3 Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage v CEO 50 Vdc C ollector-B ase Voltage VCBO 50 Vdc Vdc E m itter-B ase Voltage

2n3819 replacement

Abstract: transistor TO-92 bc108 mps2907 replacement BC237 BC109C replacement BF245 bf245 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV409LT1 MV409 Silicon Tuning Diodes These devices are designed for general frequency control and tuning applications. They provide solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Devices