MOTOROLA 381 EQUIVALENT Search Results

2N6886

Abstract: 2N5984 transistor 2N5884 2N5883 2N5885 High-Power NPN Silicon Power Transistor 2N5886 MOTOROLA M/2N588S
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general-purpose power amplifier and switching applications. • • • • Low Collector-Emitter Saturation Voltage —

motorola rf Power Transistor Data Book

Abstract: Motorola Power Transistor Data Book BAS16 transistor transistor f1 j39 motorola rf device data book
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC74HC73 Dual J -K Flip-Flop w ith Reset High-Performance Silicon-Gate CMOS The MC74HC73 is identical in pinout to the LS73. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are

equivalent bc 517

Abstract: bc 312 equivalent Controller BC 415 MPC561 MPC563 BC2 373 EQUIVALENT BC 309 26vf 3410Z BC 247
Contextual Info: SECTION 25 IEEE 1149.1-COMPLIANT INTERFACE JTAG 25.1 IEEE 1149.1 Test Access Port (TAP) and Joint Test Action Group (JTAG) The chip design includes user-accessible test logic that is compatible with the IEEE 1149.1-1994 Standard Test Access Port and Boundary Scan Architecture. The

led 7 segment anode TIL 702

Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Contextual Info: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9

pepi c

Abstract: MRF426
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF426 The RF Line 25 W PEPI - 3 0 M H z RF POWER TRANSISTOR N P N S IL IC O N NPN SILICO N RF POWER TRANSISTOR . . .designed for high gain driver and o u tp u t linear am plifier stages in 1.5 to 3 0 M H z H F /S S B equipm ent.

MOTOROLA J210

Abstract: MRF21085
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

Contextual Info: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM 33000 SERIES APPLICATION SPECIFIC ADAPTERS 33006 ACCEPTS THESE DEVICES 6 LEAD .65 MM PITCH DEVICES PARTIAL LISTING MODEL A SC-70-6 SC-88 6 LEAD SOT-363 I ALWAYS CONSULT DEVICE DATA SHEET TO INSURE PROPER FIT

33006

Contextual Info: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM 33000 SERIES APPLICATION SPECIFIC ADAPTERS 33006 ACCEPTS THESE DEVICES 6 LEAD .65 MM PITCH DEVICES PARTIAL LISTING MODEL IDS33006 REV 1-2012 SC-70-6 SC-88 6 LEAD SOT-363 ANALOG: KS-6 KEC: US6 LINEAR: SC6

IBJT

Abstract: "General Electric SCR Manual" 6th 7512 low drop ic General Electric Semiconductor General Electric SCR Manual 6th edition Rudy Severns gto 5A 500V TA84-5 AN918 Paralleling Power MOSFETs in Switching Applications D50026
Contextual Info: Parallel Operation Of Insulated Gate Transistors Application Note C IMOS RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS e FIGURE 1. N-CHANNEL IGT TRANSISTOR STEADY STATE EQUIVALENT CIRCUIT To understand the unusual behavior of its temperature coefficient, negative at low current, almost zero at normal current,

MHW 707-2 motorola

Abstract: mhw707-1 Motorola MHW707-1 MHW707-2 MHW707-4 Motorola MHW707 MHW707
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M HW 707-1 M H W 707-2 M H W 707-3 M H W 707-4 The RF Line UHF Pow er Am plifiers . . . designed for 7.5 Volt UHF power amplifier applications in industrial and commercial equipment primarily hand portable radios.

JM38510-06302

Abstract: ha816 MECL II data
Contextual Info: M M O T O R O L A Military 10525 Quad MECL-to-TTL Translator ELECTRICALLY TESTED PER: MIL-M-38510/06302 The 10525 is a quad translator for interfacing data and control signals between the MECL section and saturated logic section of digital systems. The 10525 incor­

EM-189

Abstract: 68B09E Motorola 68A09 motorola 6809 bd 825 10 6809E 68A09 ic 2030 6809 assembly language programming 68B09
Contextual Info: A p p lied M icro sy stem s C orp oration É C « 4 " d aT V I 6 8 0 9 /6 8 0 9 E S eries M icroprocessors 5020 148th Ave. N.E. Redmond, WA 98052 or P.O. Box C-1002 Redmond, WA 98073-1002 Copyrightc 1984, All rights reserved T o ll Free Service: 1-800-426-3925

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

mc1670

Abstract: 12 bit synchronous counter
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Universal Hexadecimal Counter MC10136 The MC10136 is a high speed synchronous counter that can count up, count down, preset, or stop count at frequencies exceeding 100 MHz. The flexibility of this device allows the designer to use one basic counter for most applications,

MC10136

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Universal Hexadecimal Counter MCI 0136 The MC10136 is a high speed synchronous counter that can count up, count down, preset, or stop count at frequencies exceeding 100 MHz. The flexibility of this device allows the designer to use one basic counter for most applications,

smd transistor marking z3

Abstract: smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2
Contextual Info: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

vk200* FERROXCUBE

Abstract: MRF137 3950K MOTOROLA TRANSISTOR 974
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 30 W 2 .0 -4 0 0 MHz N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR N-CHANNEL MOS BROADBAND RF POWER . . . designed fo r w ideband large-signal o utp ut and d river stages in the 2.0 to 400 MHz range

ic 74 LS 138 DECODER

Abstract: Alu 181 8 bit bcd adder/subtractor f245 motorola lal 2084 TTL 74-series IC LIST internal circuitry for sr flip flop T flip flop IC LS248 4-bit bcd subtractor
Contextual Info: SG 6 0R 4 Schottky TTL • O v e r 180 LS Devices • ALS • FAST • TTL C o m p a tib le M acrocell A rra y s • RAMs • PR O M s 006844 /y err This Material Copyrighted By Its Respective Manufacturer General Inform ation TTL in Perspective proved speed — p o w e r product co m p ared to LS as a

motorola 1N4148

Abstract: zener diode c27 ph MC33262 C18 ph zener 1n4148 motorola ph c24 zener diode MC33262 datasheet 1N4148 pspice 47nf 630v pulse capacitor electronic ballast for 36 watt fluorescent tube l
Contextual Info: MOTOROLA Order this document by AN1682/D SEMICONDUCTOR APPLICATION NOTE AN1682 Using the MC33157 Electronic Ballast Controller Prepared by: Michael Bairanzade System Engineering Motorola — Toulouse 1 — BASIC HALF BRIDGE ELECTRONIC BALLAST Most of the European low pressure fluorescent lamps are

g92.ctl

Abstract: G150 G151 G200 G203 G204 MPC823
Contextual Info: SECTION 21 IEEE 1149.1 TEST ACCESS PORT The MPC823 provides a dedicated user-accessible test access port TAP that is fully compatible with the IEEE 1149.1 Standard Test Access Port and Boundary Scan Architecture. Problems associated with testing high-density circuit boards have led tothe

IBJT

Abstract: SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5
Contextual Info: Harris Semiconductor No. AN9319 Harris Power September 1993 Parallel Operation Of Insulated Gate Transistors Author: Sebald R. Korn, Consulting Applications Engineer that the only part of the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but

MOTOROLA PLL HANDBOOK

Abstract: "Power Distribution" AN2586 david garrett power distribution projects MPC8250 MPC8255 MPC8260 MPC8264 MPC8265
Contextual Info: Freescale Semiconductor, Inc. Application Note AN2586 Rev. 0, 1/2004 Freescale Semiconductor, Inc. MPC8260 PowerQUICC II Family Power Distribution Trends: A Survey NCSD Applications Austin, Texas This application note presents a survey of power distribution circuits that are needed to deliver

k 3561 MOSFET

Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
Contextual Info: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­