MOTOROLA 572 TRANSISTOR Search Results

907a transistor

Abstract: 907A CH3E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors MMPQ2907 MMPQ2907A PNP Silicon E ^ r \r - 1 H J Ü E -l Q — H] - iw - l QJ T — 2 CASE 751B -05, STYLE 4 S O -16 MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol MMPQ2907

j340 motorola

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Sw itching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications.

motorola diode marking code

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single S ilicon S w itching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications.

MTH8N55

Abstract: DIODE MOTOROLA B33 MTM8N60 3fc relay 000073S AN569 MTH8N60 U055 TO 521 MH
Contextual Info: MOTOROLA SC IME D I XSTRS/R F b3 b?a SM O Oâ ^a bT 3 I S f -1 5 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M T H 8N 55 MTH8ÏM60 M TM 8N60 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S T h e s e T M O S P o w e r FETs are d e s ig n e d fo r h ig h v o lta g e , high

Transistor C G 774 6-1

Abstract: C G 774 6-1 1041T060
Contextual Info: I MOTOROLA SC XSTRS/R F 4bE » • b3b?2SM 00=14722 T -3 MOTOROLA 3 ' 0 T ■flOTb 5 ■ I SEMICONDUCTOR I TECHNICAL DATA The RF Line HIGH FREQUEN CY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICO N designed specifically for broadband applications requiring low

940 629 MOTOROLA 220

Abstract: MOTOROLA POWER 726 MOS FET TRANSISTOR MRF158 VK200 20WATTS
Contextual Info: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance

m33 tf 130

Abstract: BF113 is373 GRS-003 GRS003 Mje 1533 1803e 203FF 1115 R1B H645
Contextual Info: Order this document by AN1400/D AN1400 Application Note MC10/100H640 Clock Driver Family I/O SPICE Modelling Kit Prepared by Todd Pearson Debbie Beckwith ECL Applications Engineering This application note provides the SPICE information necessary to accurately model system interconnect

A502C

Abstract: A504C TTL 555 a529
Contextual Info: fl MOTOROLA INTEGRATED CIRCUITS 500 Series 400 Series TTL I integrated circuits comprise a family of transistortransistor logic designed for general purpose digital applica­ tions. The family has a medium operating speed 20 MHz clock rate , good e xternal noise

MOTOROLA POWER TRANSISTOR lc 945

Abstract: zener ap 474 940 629 MOTOROLA 113
Contextual Info: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.

CA521

Abstract: 576/C
Contextual Info: MOTOROLA INTEGRATED CIRCUITS 500 Series 400 Series TTL I integrated circuits comprise a family of transistortra n s is to r logic d e sign e d for general purpose digital applica­ tions. The family has a medium operating speed 20 MHz clock ra te , go o d e x te rn a l n o ise

d6n02

Abstract: D6N02H AN569 MMDF6N02HD MMDF6N02HDR2 SMD310
Contextual Info: MOTOROLA Order this document by MMDF6N02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF6N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS

d6n02

Abstract: Motorola ic d6n02h
Contextual Info: MOTOROLA Order this document by MMDF6N02HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 6N 02H D Medium Power Surface Mount Products M o to ro la P referre d D e vic e TMOS Dual N-Channel Field E ffect Transistors DUAL TMOS POWER MOSFET 6.0 AMPERES

940 629 MOTOROLA 113

Abstract: Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance

RF3094

Abstract: RF3096 RF3095
Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR Mb E D • b3b?254 OG^bflS T 3 1 - 2 3 I I M0 T b Order this data sheet by RF3094/D a TECHNICAL DATA RF3094 RF3095 RF3096 The RF Line M ic ro w a v e Linear P ow er

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HCT35 Product Preview J SUFFIX CERAMIC CASE 632-08 Hex Noninverting Buffer w ith Open-Drain Outputs and LSTTLCom patible Inputs N SUFFIX PLASTIC CASE 646-06 High-Perform ance Silicon-G ate C M O S The MC54/74HCT35 may be used as a level converter fo r interfacing TTL or

Contextual Info: MOTOROLA O rder this docum ent by M M D F6N02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMDF6N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 6.0 AMPERES

731 motorola

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance Output Power = 2.0 Watts

MD2369

Abstract: md2905 82440 MD2369A MD2369AF MD2369B MD2369BF MD2369F MD2904 MQ2369
Contextual Info: NO T O R O L A SC -CXSTRS/R 6367254 FJ ^ MOTOROLA SC CXSTRS/R D E | b 3h7a S 4 96 D F ODfl aH4 D 82440 D T - Z 7-^-7 MAXIMUM RATINGS Sym bol Value Collector-Emitter Voltage VCEO 15 Vdc - Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 5.0 Vdc

lr 2905 transistor

Abstract: lr 2905 z LR 2905 md2904 ic 2904 MD2905
Contextual Info: M O T O R O L A SC -CXSTRS/R F> 6367254 MOTOROLA D E | t , 3 b 7 E S 4 0 D A B 4 4 3 0 |" SC XSTRS/R F 9 6D 8 2 4 4 3 _ T M A X IM U M RATINGS Sym bol M D 2 9 0 4 ,F M D 29Q 5,F M Q 29 0 4 C ollec to r-E m itter V o lta g e VCEO 40 C ollector-B ase V o ltag e

Contextual Info: MAXIMUM RATINGS Rating Value Supply Voltage - Continuous SUHL/TTL +8.0 Vdc 4.5 to 6.0 Vdc fnput Voltage - V.n +5.5 Vdc Output Voltage - Vout +5.5 Vdc Operating Temperature Range -55 t o +125 °C Storage Temperature Range -65 t o +150 °c Maximum Junction Temperature

502 nand

Contextual Info: LANSDALE SEMICONDUCTOR 17E D • 531^03 QDODSTS 7 ■ T~£Z-Q1 "T-Sl'OR T~H3-i5 T - M 07-07 T-V6-01-13 T-V6-07-08 - Rating Supply Voltage - Continuous 500/550 Series Vdc +8.0 Supply Operating Voltage Range MOTOROLA INTEGRATED CIRCUITS 400 Series 0 to +75 ° C

LA 4301

Contextual Info: LA N S D A L E S E M I C O N D U C T O R 32E D • £3^003 O O O G B M R T ■ LTE T-43-01 MAXIMUM RATINGS Rating Value +8.0 Vdc 4.5 to 6.0 Vdc fnput Voltage - V ln +5.5 Vdc Output Voltage - Voul +5.5 Vdc Operating Temperature Range -55 to +125 °C Storage Temperature Range

MC34167T equivalent

Abstract: CHK1050 MJE130 PT3595 elmaco transformer MC34167 application notes MJE13005 MC34167 Application Notes 5930B 5925B
Contextual Info: MC34167 MC33167 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Power Switching Regulator POWER SWITCHING REGULATOR The MC34167, MC33167 series are high performance fixed frequency power switching regulators that contain the primary functions required for DC-to-DC