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    MOTOROLA MOSFET MFE Search Results

    MOTOROLA MOSFET MFE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA MOSFET MFE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2P102

    Abstract: 100125FC MMDFS2P102 MMDFS2P102R2 DFS2P dfs2p10 SIDED10 MARKING 1ED
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MM DFS2P10tiD DATA DesignerSTMData Sheet FETWTM MOSFET and Schott~ Rectifier The FETWM product family incorporates low RDS on , true logic level MOSFETS packaged with industy leading, low fomard drop, low leakage Schottky Barrier rectifiers


    Original     		PDF DFS2P10tiD OUCHTONE602 81-M521 852-Z 2P102 100125FC MMDFS2P102 MMDFS2P102R2 DFS2P dfs2p10 SIDED10 MARKING 1ED

    MT 6236

    Abstract: Transistor WIG 10NO2Z woy transistor AN569 zener diod MARKING S04 diod zener
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document bv MMSF1ONO22D DATA DesignerSTM Data Sheet - I I Medium Power Surface Mount Products TMOS Single N-Channel with Monolithic Zener ESD Protected Gate EZFETSTM are an advanced series of power MOSFETS which


    Original     		PDF MMSF1ONO22D 2W609 MT 6236 Transistor WIG 10NO2Z woy transistor AN569 zener diod MARKING S04 diod zener

    AN569

    Abstract: MMDF6N03HD MMDF6N03HDR2
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order thisdocument by MMDF6N03HD/D DATA E Advance /formation Medium Power Surface Mount Products TMOS Dual N-ChanneI FieBdEffect Transistors Dual HDTMOS devices are an advanced series of power MOSFETS which utilize Motorola’s


    Original     		PDF MMDF6N03HD/D Box54W, 30H7G21W Ok7741846 AN569 MMDF6N03HD MMDF6N03HDR2

    MI1600

    Abstract: 100L AN569 MMDF4P03HD MMDF4P03HDR2 ldm # jl
    Text: . MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMDF4P03HDID DATA Advance Information MMDF4P03HD Medium Power Surface Mount Products Motorola TMOS Dual P-Channel FieBdEffect Transistors Dual HDTMOS devices are an advanced series of power MOSFETS which utilize Motorola’s


    Original     		PDF MMDF4P03HDID MMDF4P03HD MMDF4P03HDm MI1600 100L AN569 MMDF4P03HD MMDF4P03HDR2 ldm # jl

    D3200

    Abstract: MMDF3200 MMDF3200Z diode sy 166 TBD 135 Transistor
    Text: MOTOROLA SEMICONDUCTOR o TECHNICAL Order thie document by MMDF3200ZD DATA Product Preview WaveFETTM I Motorola Preferred Devica Medium Power Surface Mount Products I TMOS DuaI N-Channel Field Effect Transistors WaveFEPM devices are an advanced series of power MOSFETS which utilize Motorola’s


    Original     		PDF MMDF3200ZD WI-2447 602-2H609 MMDF3200 D3200 MMDF3200Z diode sy 166 TBD 135 Transistor

    MPF102 JFET

    Abstract: motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN211A/D SEMICONDUCTOR APPLICATION NOTE AN211A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Field Effect Transistors in Theory


    Original     		PDF AN211A/D AN211A MPF102 JFET motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet

    AN211A

    Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
    Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide


    Original     		PDF AN211A/D AN211A AN211A MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola

    2N3797

    Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
    Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide


    Original     		PDF AN211A/D AN211A 2N3797 MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE

    UC3843 spice model

    Abstract: project on water level control using ic 7400 mosfet cross reference mhw612 mc146805g MC88110 MC68020 Minimum System Configuration smart UPS APC CIRCUIT diagram ASSIST09 mhw613
    Text: BR101/D REV 28 Technical and Applications Literature Selector Guide and Cross References Effective Date 1st Half 1998 Semiconductor Products Sector Technical and Applications Literature Selector Guide and Cross References ALExIS, Buffalo, Bullet-Proof, BurstRAM, CDA, CMTL, Ceff-PGA, Customer Defined Array, DECAL, Designerís, DIMMIC,


    Original     		PDF BR101/D ECL300, UC3843 spice model project on water level control using ic 7400 mosfet cross reference mhw612 mc146805g MC88110 MC68020 Minimum System Configuration smart UPS APC CIRCUIT diagram ASSIST09 mhw613

    VN5000TNE

    Abstract: IRF0123 VMP4 motorola 20n IRF0113 mosfet vn66af VN0106N2 mosfet 2sk* to-92 mosfet 20n 735M
    Text: MOSFET Item Part Number Manufacturer V BR DSS loss Max Po Max ros (on) gFS Min VGS(th) elsa Max Max tr Max tf Max TOper Max Package Style N-Channel Enhancement-Type, (Co nt' d) 5 S01124Bo S01124Bo VNOS10l 2N7000 VN2222l So1117Bo So1117N S01137Bo VN2222lM 15


    Original     		PDF S01124Bo VNOS10l 2N7000 VN2222l So1117Bo So1117N S01137Bo VN2222lM VN130SN3 VN5000TNE IRF0123 VMP4 motorola 20n IRF0113 mosfet vn66af VN0106N2 mosfet 2sk* to-92 mosfet 20n 735M

    40673 MOSFET

    Abstract: MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET 3SK107F
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS M loss Max (A) Po Max (W) ros (on) (Ohms) 9FS Min (S) VGS(th) Max (V) Cln Max (F) tr Max (s) tt Max (s) Toper Max (OC) Package Style N-Channel Dual-Gate T trode, (Cont' d) 5 10 BF964 BF966 BF966 BF966 3SK107E


    Original     		PDF BF964 BF966 3SK107E 3SK107F 3SK107G BF996S 40673 MOSFET MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET

    MFE990

    Abstract: MFE960 MFE930
    Text: MOTOROLA SC XSTRS/R F IME 0 § fc.3t.7S54 000^740 Ö | MOTOROLA • SEMICONDUCTOR MFE930 MFE960 MFE990 TECHNICAL DATA 2.0 A M P E R E N -C H A N N EL E N H A N C EM EN T -M O D E T M O S FIELD-EFFECT T R A N SIST O R N -C H A N N E L T M O S FET These T M O S FETs are d esigned for high-speed sw itching appli­


    OCR Scan     		PDF MFE930 MFE960 MFE990 FE930 FE960 FE990 MFE930, 3b725Ji MFE990

    MFE9200

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MFE9200 N-CHANNEL ENHANCEMENT-MODE TMOS FIELD EFFECT TRANSISTOR 200 VOLTS This T M O S FET is d e s ig n e d fo r h ig h -v o lta g e , h ig h -sp eed s w itc h ­ ing a p p licatio n s such as line drivers, relay d rivers, C M O S logic,


    OCR Scan     		PDF MFE9200 MFE9200

    MPF910

    Abstract: No abstract text available
    Text: MOTOROLA SEM IC O N D U C T O R MFE910 MPF910 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE TM OS FIELD-EFFECT TRANSISTOR 60 VOLTS T h is T M O S FET is d e sig n e d for high-voltage, h igh -sp e ed sw itch ­ ing applications su c h as line drivers, relay drivers, C M O S logic,


    OCR Scan     		PDF MFE910 MPF910 MPF910

    1RFZ40

    Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
    Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained


    OCR Scan     		PDF DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50

    MFE3003

    Abstract: aade MFEC3003
    Text: ~3M MOTOROLA SC -CDIODES/OPTO} 6 3 6 7 2 5 5 M O T O R O L A SC DE^b3b725S DIODES/OPTO ODBfiQ4ti 4 | ~ 34-C 3 8 0 4 6 r - FIELD-EFFECT TRANSISTORS DICE (continued) MFEC3003 DIE NO. LINE SOURCE — DFM115 This die provides performance equal to or better than that of


    OCR Scan     		PDF b3b725S DFM115 MFEC3003 MFE3003 MFE3003 aade MFEC3003

    MFE121

    Abstract: MFE120 MFE122 T7210
    Text: MOTORCLA SC XSTRS/R F 15E D | b3fc.7a5M Q0afci7g0 1 [ MFE120 T~Z! , thru MFE122 CASE 20-03, STYLE 9 TO-72 TO-206AF M A X IM U M RATINGS Symbol Value VDS + 25 Vdc Drain Current >D 30 mAdc Total Device Dissipation @ T /\ - 25°C Derate above 25°C PD 300 1.7


    OCR Scan     		PDF MFE120 MFE122 O-206AF) b3b7254 MFE120 MFE121 MFE122 T7210

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


    OCR Scan     		PDF DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    Untitled

    Abstract: No abstract text available
    Text: M O T O R O L A SC -CXSTRS/R F> 6367254 Tb MOTOROLA SC CXSTRS/R D E ~ | h B b 7 a S 4 OOflEbb? □ "j- F 96D 82667 - T - D 2 / - iJ r MFE140 CASE 20-03, STYLE 9 TO-72 TO-206AF) M A X I M U M R A T IN G S Sym bol V alue U n it Drain -Source V oltage


    OCR Scan     		PDF MFE140 O-206AF)

    arco 402

    Abstract: JMC2951 SK1381 001H MFE140 SK138 185 6-140
    Text: M O T O R O L A SC -CXSTRS/R F> 6367254 Tb MOT OROLA SC CXSTRS/R D E ~ | h B b 7 a S 4 OOflEbh? □ "J- F 96D 82667 D - r - 3 /- ajr MFE140 CASE 20-03, STYLE 9 TO-72 TQ-206AF) M A X IM U M R A T IN G S Symbol Value Unit Drain-Source Voltage Rating


    OCR Scan     		PDF MFE140 O-206AF) 10/iAdc, 3b75s4 gdflet71 arco 402 JMC2951 SK1381 001H MFE140 SK138 185 6-140

    MFE3002

    Abstract: No abstract text available
    Text: M O T O R O L A SC -CDIODES/OPTO} 34 6 3 6 7 2 5 5 M O T O R O L A SC DE I b3ti7ESS 0 0 3 0 0 4 5 <DIODES/OPTO 34C S 1 38045 D T-jr-î-r RELD-EFFECT TRANSISTORS DICE continued) MFEC3002 die n o . LINE SOURCE — DFM114 This die provides performance equal to or better than that of


    OCR Scan     		PDF DFM114 MFEC3002 MFE3002 MFE3002

    10VDC

    Abstract: MAX584 2n4352
    Text: M O T O R OL A SC XSTRS/R F 12E D | b3b?2S4 G0flt?M3 T | MFE823 CASE 22-03, STYLE 11 TO-18 TO-206AA M A X IM U M RATINGS Symbol Rating Value U nit • 25 Vdc Drain-Source Voltage Vos Drain-Gate Voltage Vd G ±10 Vdc Id 30 mAdc PD 300 1.71 T j. Tstg - 6 5 to +175


    OCR Scan     		PDF MFE823 O-206AA) 2N4352 10VDC MAX584

    PF960

    Abstract: D004 power ic pf990
    Text: MOTOROLA SEM ICONDUCTOR MPF930 MPF960 MPF990 TECHNICAL DATA N -C H A N N E L E N H A N C E M E N T -MO DE TM O S F IE L D -E F F E C T T R A N S IS T O R 2 .0 A M P E R E N-CHANNEL TMOS FETs T h e s e T M O S FE Ts a re d e s ig n e d f o r h ig h - s p e e d s w it c h in g a p p li­


    OCR Scan     		PDF MPF930 MPF960 MPF990 MPF930, PF960 D004 power ic pf990