MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS Search Results

MRF148

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 30 W 2 .0 -1 7 6 M H z N-CHANNEL MOS LINEAR RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR FET . d esigned for pow er am plifier applications in industrial, c o m m e r­ cial and am ateur radio equipm ent to 1 75 MHz.

Granberg

Abstract: PUSH PULL MOSFET DRIVER watts AN-860 FET small signal transistors motorola mosfet class d MC10198 all mosfet vhf power amplifier 300 watt mosfet amplifier class AB all mosfet vhf power amplifier narrow band 150 watt amplifier advantages and disadvantages
Contextual Info: AN-860 Application Note POWER MOSFETs versus BIPOLAR TRANSISTORS By Helge 0 . Granberg Sr. Staff Engineer Motorola Semiconductor Products, Inc. W hat is better, if anything, with the power FETs if we can get a bipolar tran sisto r w ith an equal power rating for less th an half the price?

mosfet class d

Abstract: PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier
Contextual Info: Order this document by AN860/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN860 POWER MOSFETs versus BIPOLAR TRANSISTORS Prepared by: Helge O. Granberg Sr. Staff Engineer What is better, if anything, with the power FETs if we can get a bipolar transistor with an equal power rating for less

MRF173

Abstract: RF MOSFETs 1150 RC NETWORK bourns vk200* FERROXCUBE
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistors MRF173 MRF173CQ N-Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of

MPF102 JFET

Abstract: motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN211A/D SEMICONDUCTOR APPLICATION NOTE AN211A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Field Effect Transistors in Theory

J600 MOSFET

Abstract: uhf tv power transistor 250w cgs resistor c7 j310 fet RF transformer turn ratio 12 fet j310 planar transformer theory AN211A MRF176 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF176GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF176GU MRF176GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband

AN211A

Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide

Contextual Info: MOTOROLA Order this document by MRF176GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF176GU MRF176GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband

J50 mosfet

Abstract: J119 fet transistor k 2723 J892 J168 J119 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

2N3797

Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide

Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode . . . designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

inductor vk200

Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LU MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor
Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

MOTOROLA LINEAR HF

Abstract: MRF175LV Nippon capacitors MRF175
Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

VK200 20/4B inductor

Abstract: VK200 inductor of high frequencies VK200 4B inductor 100 watt hf mosfet 12 volt IN 965 b zener diode AN211A MRF175LU MRF175LV VK200 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

6a3 diode zener

Abstract: 6a3 zener MRF136 zener motorola 1N5925A AN211A AN215A AN721 motorola MRF136 j331
Contextual Info: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

MRF136

Abstract: zener motorola 1N5925A AN211A AN215A AN721 j331 s1170 MRF1364 MOTOROLA S 5068
Contextual Info: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

Contextual Info: MOTOROLA Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF173 N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of

uhf 150w mosfet

Abstract: PS1517 25 ohm semirigid
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-E ffect Transistors MRF176GU MRF176GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband

planar transformer theory

Abstract: Unelco
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Fie ld -E ffe ct Transistors MRF176GU M RF176GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband

zener diode c16 ph

Abstract: ph c15 zener
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF176GU MRF176GV N-Channel Enhancement-Mode Designed for broadband com m ercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband

MOSFET J220

Abstract: planar transformer theory arco 404 MRF175GU 200 watt hf mosfet MRF175GV rf push pull mosfet power amplifier VK200 20/4B inductor vk200 ferrite bead AN211A
Contextual Info: MOTOROLA Order this document by MRF175GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband

RF MOSFETs

Abstract: "RF MOSFETs"
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF173* M RF173CQ The RF MOSFET Line RF P o w er Field E ffe c t Transistors ‘Motorola Preferred Device N-Channel Enhancement Mode MOSFETs 80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and military applications up to 200 MHz

This article

Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
Contextual Info: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left