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    MRF175 Search Results

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    MRF175 Price and Stock

    MACOM MRF175GV

    RF MOSFET 28V 375-04
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    DigiKey MRF175GV Tray 10
    • 1 -
    • 10 $204
    • 100 $204
    • 1000 $204
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    Mouser Electronics MRF175GV
    • 1 -
    • 10 $216.7
    • 100 $216.7
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    Verical MRF175GV 15 1
    • 1 $231.6
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    • 100 $231.6
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    MRF175GV 4 1
    • 1 $231.6
    • 10 $231.6
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    Richardson RFPD MRF175GV 4 1
    • 1 $231.58
    • 10 $231.58
    • 100 $231.58
    • 1000 $231.58
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    MACOM MRF175LU

    RF MOSFET 28V 333-04
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    DigiKey MRF175LU Tray
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    Mouser Electronics MRF175LU
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    Richardson RFPD MRF175LU 1
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    MACOM MRF175GU

    RF MOSFET 28V 375-04
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF175GU Tray 10
    • 1 -
    • 10 $185.038
    • 100 $185.038
    • 1000 $185.038
    • 10000 $185.038
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    Mouser Electronics MRF175GU 8
    • 1 $212.29
    • 10 $198.83
    • 100 $191.35
    • 1000 $191.35
    • 10000 $191.35
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    Richardson RFPD MRF175GU 20
    • 1 -
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    • 100 $177.64
    • 1000 $177.64
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    MRF175 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF175GU Advanced Semiconductor Transistor Original PDF
    MRF175GU M/A-COM 150 WATTS, 28 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FET Original PDF
    MRF175GU M/A-COM RF FETs, Discrete Semiconductor Products, FET RF 2N-CH 28V 100MA 375-04 Original PDF
    MRF175GU Motorola N-CHANNEL MOS BROADBAND RF POWER FETs Original PDF
    MRF175GU NXP Semiconductors PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Original PDF
    MRF175GU Unknown FET Data Book Scan PDF
    MRF175GU1111 Tyco Electronics N-CHANNEL MOS BROADBAND RF POWER FETs Original PDF
    MRF175GV Advanced Semiconductor RF POWER FIELD-EFFECT TRANSISTOR Original PDF
    MRF175GV M/A-COM 200 WATTS, 28 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FET Original PDF
    MRF175GV M/A-COM RF FETs, Discrete Semiconductor Products, FET RF 2N-CH 28V 100MA 375-04 Original PDF
    MRF175GV Motorola N-CHANNEL MOS BROADBAND RF POWER FETs Original PDF
    MRF175GV NXP Semiconductors PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Original PDF
    MRF175GV Tyco Electronics TRANS MOSFET N-CH 65V 26A 5P-218 Original PDF
    MRF175GV Unknown FET Data Book Scan PDF
    MRF175LU M/A-COM 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER FET Original PDF
    MRF175LU M/A-COM RF FETs, Discrete Semiconductor Products, FET RF N-CH 28V 100MA 333-04 Original PDF
    MRF175LU Motorola N-CHANNEL BROADBAND RF POWER FETs Original PDF
    MRF175LU NXP Semiconductors PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Original PDF
    MRF175LU Tyco Electronics TRANS MOSFET N-CH 65V 13A 4P-225 Original PDF
    MRF175LU Unknown FET Data Book Scan PDF

    MRF175 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Mrf175gu

    Abstract: RF Power Field-Effect Transistor,
    Text: MRF175GU RF POWER FIELD-EFFECT TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF175GU is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz. MAXIMUM RATINGS ID 26 A VDSS 65 V PDISS 400 W @ TC = 25 OC


    Original
    PDF MRF175GU MRF175GU RF Power Field-Effect Transistor,

    J120 MOSFET

    Abstract: J115 mosfet AN211A MRF175LU VK200 MOSFET J140
    Text: Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original
    PDF MRF175LU/D MRF175LU J120 MOSFET J115 mosfet AN211A MRF175LU VK200 MOSFET J140

    Untitled

    Abstract: No abstract text available
    Text: , L na. l£i±£u 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973) 376-2922 (212)227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull


    Original
    PDF MRF175GU MRF175GV

    MOSFET TEST SIMPLE Procedures

    Abstract: mosfet HF amplifier Simple test MOSFET Procedures AN211A MRF175LU hf amplifier 100w 100W zener diode mosfet vhf power amplifier
    Text: MRF175LU The RF MOSFET Line 100W, 400MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.


    Original
    PDF MRF175LU 400MHz, MOSFET TEST SIMPLE Procedures mosfet HF amplifier Simple test MOSFET Procedures AN211A MRF175LU hf amplifier 100w 100W zener diode mosfet vhf power amplifier

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original
    PDF MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LU/D*

    MRF140

    Abstract: mrf151g 300 blf245 MRF174 "cross-reference" motorola MRF150 04 150 MRF150 MRF157 SOT123 BLF546
    Text: Version 1.0 Date: 2002-08-01 PHILIPS VDMOS Cross-Reference List UHF Philips Type VDMOS BLF548 Motorola Type TMOS MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 BLF542 MRF160 BLF404 BLF521 MRF158 BLF368 MRF141G BLF278 Motorola Philips


    Original
    PDF BLF548 MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 MRF140 mrf151g 300 blf245 MRF174 "cross-reference" motorola MRF150 04 150 MRF150 MRF157 SOT123 BLF546

    VK200 20/4B inductor

    Abstract: VK200 inductor of high frequencies VK200 4B inductor 100 watt hf mosfet 12 volt IN 965 b zener diode AN211A MRF175LU MRF175LV VK200 Nippon capacitors
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original
    PDF MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LU/D* VK200 20/4B inductor VK200 inductor of high frequencies VK200 4B inductor 100 watt hf mosfet 12 volt IN 965 b zener diode AN211A MRF175LV VK200 Nippon capacitors

    planar transformer theory

    Abstract: G10 zener diode AN211A MRF175GU MRF175GV VK200 25 ohm semirigid
    Text: Order this document by MRF175GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    Original
    PDF MRF175GU/D MRF175GU MRF175GV planar transformer theory G10 zener diode AN211A MRF175GU MRF175GV VK200 25 ohm semirigid

    mrf175gv

    Abstract: No abstract text available
    Text: MRF175GV RF POWER FIELD-EFFECT TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF175GV is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz. MAXIMUM RATINGS ID 26 A VDSS 65 V PDISS 400 W @ TC = 25 C


    Original
    PDF MRF175GV MRF175GV

    MOTOROLA LINEAR HF

    Abstract: MRF175LV Nippon capacitors MRF175
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original
    PDF MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LV MRF175LU/D* MRF175LU/D MOTOROLA LINEAR HF Nippon capacitors MRF175

    MOSFET J220

    Abstract: planar transformer theory arco 404 MRF175GU 200 watt hf mosfet MRF175GV rf push pull mosfet power amplifier VK200 20/4B inductor vk200 ferrite bead AN211A
    Text: MOTOROLA Order this document by MRF175GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    Original
    PDF MRF175GU/D MRF175GU MRF175GV MRF175GU MRF175GU/D* MOSFET J220 planar transformer theory arco 404 200 watt hf mosfet MRF175GV rf push pull mosfet power amplifier VK200 20/4B inductor vk200 ferrite bead AN211A

    "RF MOSFET"

    Abstract: mosfet HF amplifier MRF175GV AN211A MRF175GU MOSFET TEST SIMPLE Procedures
    Text: MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state


    Original
    PDF MRF175GU MRF175GV 200/150W, 500MHz, "RF MOSFET" mosfet HF amplifier MRF175GV AN211A MRF175GU MOSFET TEST SIMPLE Procedures

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode . . . designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original
    PDF MRF175LU/D MRF175LU MRF175LV 10orola MRF175LU MRF175LU/D*

    transistors cross reference list

    Abstract: MOTOROLA circuit for mrf150 CLASS AB mrf151g 300 MRF166W BLF246 MRF140 blf404 MRF177 Motorola transistors MRF158
    Text: PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Philips Type UHF Motorola Type BLF548 MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 MRF166C BLF542 MRF160 BLF404 BLF521 MRF158 VHF


    Original
    PDF BLF548 MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 transistors cross reference list MOTOROLA circuit for mrf150 CLASS AB mrf151g 300 MRF166W BLF246 MRF140 blf404 MRF177 Motorola transistors MRF158

    inductor vk200

    Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LU MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original
    PDF MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LU/D* inductor vk200 VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor

    This article

    Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
    Text: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left


    Original
    PDF namely988. AR346. AN1107. This article vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet

    VK200 INDUCTOR

    Abstract: inductor vk200
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power F ield -E ffect Transistors MRF175LU MRF175LV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    OCR Scan
    PDF MRF175LU MRF175LV MRF175L MRF175LU MRF175LV VK200 INDUCTOR inductor vk200

    VK200 INDUCTOR

    Abstract: inductor vk200 VK200 inductor of high frequencies
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF175LU MRF175LV N-Channel Enhancement-Mode Designed for broadband com m ercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    OCR Scan
    PDF RF175LU MRF175LV F175L MRF175LU MRF175LV VK200 INDUCTOR inductor vk200 VK200 inductor of high frequencies

    0400X0

    Abstract: No abstract text available
    Text: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA M RF175GV MRF175GU The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode . . . designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of


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    PDF MRF175GV MRF175GU MRF175G MRF176 0400X0

    J360

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power FSeld-Effect Transistors MRF175GU M RF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


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    PDF MRF175GV MRF175GU MRF175GU RF175GV MRF175G MRF175GV J360

    MRF175

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF175LV MRF175LU The RF MOSFET Line RF P o w e r Field E ffe c t T ra n sisto rs N-Channel Enhancement-Mode . . . designed fo r b roadband co m m ercia l and m ilita ry a pp licatio n s using sing le ended c ir­ cu its at frequencies to 400 MHz. The high pow er, high gain and broadband perfo rm a n ce


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    PDF MRF175LV MRF175LU MRF175

    mosfet te 2304

    Abstract: MRF175GU hf power transistor mosfet transistor te 2305 TOROIDS Design Considerations planar transformer theory MRF176
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    OCR Scan
    PDF MRF175GV MRF175GU MRF175G MRF176 MRF175GU MRF175GV mosfet te 2304 hf power transistor mosfet transistor te 2305 TOROIDS Design Considerations planar transformer theory

    J115 mosfet

    Abstract: MRF175LU
    Text: MOTOROLA SEM ICO NDU CTO R TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect T ransistors MRF175LU M RF175LV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


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    PDF MRF175LU MRF175LV 28cal MRF175L MRF175LU MRF175LV J115 mosfet

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N-Channel Enhancement-Mode Designed for broadband com m ercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


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    PDF RF175GV MRF175GU MRF175G MRF176 MRF17SGU MRF175GV