MOTOROLA POWER APPLICATIONS MANUAL Search Results

irf44z

Abstract: 3525 PWM 5n03 IRFZ44 parallel 5bp transistor making AN1520 MTP75N03HDL two transistor forward 2p02 IRFZ44 equivalent
Contextual Info: MOTOROLA Order this document by AN1520/D SEMICONDUCTOR APPLICATION NOTE AN1520 HDTMOS Power MOSFETs Excel in Synchronous Rectifier Applications Prepared by: Scott Deuty, Applications Engineer Motorola Inc. A new technology, HDTMOS, was recently introduced

MMFT6661T1

Abstract: 72v6 BC237 2N3819 fet BC309B DL 3 Y SOT-223 msc2295 ucl 82
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT6661T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as

TSOP 48 thermal resistance

Abstract: BC237 Transistor BC107b motorola transistor 2N3819 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as

FET 2N5458

Abstract: BC547 fet BC237 TO261AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT107T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as

SU 179 transistor

Abstract: s227
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF5035 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect Transistor N-Channel Enhancement-Mode 35 W, 12.5 VOLTS, 512 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and Industrial applications at frequen­

MPA1036

Abstract: MPA1000
Contextual Info: ANxxxx Application Note Estimating Power in the MPA1000 Family of FPGAs Prepared by Paul Butler Motorola Applications Engineer Introduction This application note is intended to provide the users of Motorola’s MPA1000 family a method of quickly estimating the

MRF158R

Abstract: 14-watt
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF158 MRF158R The RF TMOS Line Power Field Effect Transistor Motorola Preferred Devices N-Channel Enhancement Mode Designed for wideband large-signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance

BC237

Abstract: BC857A MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,

BC237

Abstract: 2N5551 SOT23 2n2222 sot-23 418 motorola j112 fet free transistor BC547 temperature 2N3819 junction fet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,

MPC8245

Contextual Info: MPC8245 Motorola Integrated Host Processor The MPC8245 Integrated Host Typical Applications Processor implementing the PowerPC • Wireless LAN architecture fits applications where • Routers/Switches cost, space, power consumption and • Embedded Computing

MPC8241

Contextual Info: MPC8241 Motorola Integrated Host Processor The MPC8241 Integrated Host Typical Applications Processor implementing the PowerPC • Wireless LAN architecture fits applications where • Routers/Switches cost, space, power consumption and • Embedded Computing

door bell

Abstract: MPC8245 I2C BUS address translator
Contextual Info: MPC8245 Motorola Integrated PowerPC Processor The MPC8245 Integrated PowerPC™ Typical Applications Processor fits applications where • Routers/Switches cost, space, power consumption and • Multi-channel modems performance are critical requirements.

Nippon capacitors

Abstract: equivalent of transistor BFT 51
Contextual Info: MOTOROLA Order th is docum ent by MRF5007/D SEMICONDUCTOR TECHNICAL DATA f The RF MOSFET Line MRF5007 RF Power Field Effect TVansistor Motorola Preferred Device N-Channel Enhancement-Mode The MRF5007 is designed for broadband comm ercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

diode l 0607

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

2N5458

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.

VK200 19 4B INDUCTOR

Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

731 motorola

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance Output Power = 2.0 Watts

MRF151G

Abstract: BH Rf transistor mrf151g 300 MRF151G hf amplifier
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

TOROIDS Design Considerations

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

MRF151G

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

equivalent of transistor D 2331

Abstract: 1RC5
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this