MOTOROLA TRANSISTOR T2 Search Results
MOTOROLA TRANSISTOR T2 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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| TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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| TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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| TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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MOTOROLA TRANSISTOR T2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MJF18008 equivalent
Abstract: MJF18008 MPF930 MTP8P10 MUR105 221D MJE18008 MJE210
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MJE18008/D* MJE18008/D MJF18008 equivalent MJF18008 MPF930 MTP8P10 MUR105 221D MJE18008 MJE210 | |
vce 1200 and 5 amps npn transistor to 220 pack
Abstract: 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
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E69369 MJE18004/D* MJE18004/D vce 1200 and 5 amps npn transistor to 220 pack 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105 | |
BC108 characteristic
Abstract: BC237 c 2026 y transistor msc2295 marking 7m SOT-323
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MUN5211DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC108 characteristic BC237 c 2026 y transistor msc2295 marking 7m SOT-323 | |
MJE18006
Abstract: 221D MJE210 MJF18006 MPF930 MTP8P10 MUR105
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MJE18006/D* MJE18006/D MJE18006 221D MJE210 MJF18006 MPF930 MTP8P10 MUR105 | |
221D
Abstract: MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105
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MJE18006/D* MJE18006/D 221D MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105 | |
221D
Abstract: MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105
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MJE18008/D* MJE18008/D 221D MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105 | |
BC237
Abstract: equivalent to BC177 2n6431
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MUN5111DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 equivalent to BC177 2n6431 | |
BC237
Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
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SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1 | |
221D
Abstract: BUL147 BUL147F BUL44 BUL44F MPF930 MTP8P10
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BUL147/D BUL147* BUL147F* BUL147/BUL147F BUL147/D* 221D BUL147 BUL147F BUL44 BUL44F MPF930 MTP8P10 | |
transistor BF245
Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363
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OT-223 PZTA14T1 inch/1000 U218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor BF245 BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363 | |
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
Abstract: 221D BUL147 BUL147F BUL44 BUL44F MPF930 MTP8P10
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BUL147/D BUL147* BUL147F* BUL147/BUL147F BUL147/D* NPN 200 VOLTS 20 Amps POWER TRANSISTOR 221D BUL147 BUL147F BUL44 BUL44F MPF930 MTP8P10 | |
Transistor 2N2905A
Abstract: BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92
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MUN5311DW1T1 Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 Transistor 2N2905A BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92 | |
100MAdc
Abstract: motorola bipolar transistor GUIDE 40250 Transistor Catalog Bipolar Transistor 40250 power transistor motorola 239 zener
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BD791/D BD791 BD791T O-225 \\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000817\08162000 3\ONSM\08032000 100MAdc motorola bipolar transistor GUIDE 40250 Transistor Catalog Bipolar Transistor 40250 power transistor motorola 239 zener | |
BD791
Abstract: MBR340 MSD6100
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BD791/D BD791 BD791 MBR340 MSD6100 | |
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SOT23 JEDEC standard orientation pad size
Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
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OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458 | |
BC237Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its |
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70/SOT Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 | |
MOTOROLA DATE CODE MARKING
Abstract: marking H2A sot-23 marking A6f sot23 marking A6L sot23 Transistor marking p2
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OT-23 MOTOROLA DATE CODE MARKING marking H2A sot-23 marking A6f sot23 marking A6L sot23 Transistor marking p2 | |
MGY25N120Contextual Info: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced |
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MGY25N120/D MGY25N120 MGY25N120 | |
MUN2111T1Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its |
OCR Scan |
MUN2111T1 SC-59 MUN2111T1 MUN2114T1 b3b7255 001350b | |
MGW20N120Contextual Info: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGW20N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced |
Original |
MGW20N120/D MGW20N120 IGBTMGW20N120/D MGW20N120 | |
MGY25N120Contextual Info: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGY25N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced |
Original |
MGY25N120/D MGY25N120 MGY25N120 | |
BC237Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its |
Original |
Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237 | |
transistor motorola 236
Abstract: MGY25N120
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MGY25N120/D MGY25N120 MGY25N120/D* transistor motorola 236 MGY25N120 | |
MGW20N120Contextual Info: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced |
Original |
MGW20N120/D MGW20N120 MGW20N120 | |