MPS6521 MOTOROLA Search Results

MPS6523

Abstract: 1N916 MPS6521
Contextual Info: MOTOROLA Order this document by MPS6521/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors COLLECTOR 3 NPN 2 BASE MPS6521* PNP 1 EMITTER MPS6523 COLLECTOR 3 Voltage and current are negative for PNP transistors 2 BASE *Motorola Preferred Device 1 EMITTER

MPS6521

Abstract: MPS6523 MPS6520 mps-6521 mps6521 motorola
Contextual Info: MAXIMUM RATINGS Rating Symbol NPN PNP Unit C o lle cto r-E m itte r V o ltage MPS6520, MPS6521 MPS6523 v CEO Collector-Base Voltage MPS6520, MPS6521 MPS6523 VCBO Em itter-Base V o ltage vebo 4.0 Vdc C o lle ctor C u rrent — C o n tin u o u s 'c 100 m A dc

MPS6520

Abstract: MPS6520 equivalent AN569 in Motorola Power Applications MPS3905 MPS3906 MPS6521 MPS6523 1N916 MPS3904 motorola an569 thermal
Contextual Info: MOTOROLA Order this document by MPS6520/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors COLLECTOR 3 NPN 2 BASE MPS6520 MPS6521* 1 EMITTER PNP MPS6523 COLLECTOR 3 Voltage and current are negative for PNP transistors 2 BASE *Motorola Preferred Device 1 EMITTER

transistor marking wt

Abstract: motorola application note AN-569 modes of operation of transistor BC177 BC237 hie for bc547b 2N2222 MPS2222 npn transistor BC547 collector characteristic curve 2n3819 equivalent transistor MOTOROLA TRANSISTOR 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors COLLECTOR 3 NPN MPS6521* PNP MPS6523 2 BASE 1 EMITTER COLLECTOR 3 Voltage and current are negative for PNP transistors 2 BASE *Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage

MPS6521 equivalent

Abstract: MPS6523 mps6521 mps6521 motorola mps6521 TRANSISTOR
Contextual Info: MOTOROLA Order this document by MPS6521/D SEMICONDUCTOR TECHNICAL DATA A m p lifie r T ra n s is to rs COLLECTOR 3 NPN M P S 6521 * PNP M PS6523 Voltage and current are negative for PNP transistors 'M otorola Preferred Device MAXIMUM RATINGS Rating Symbol

Contextual Info: MAXIMUM RATINGS Rating Symbol C o lle c to r -E m itte r V o lta g e NPN PNP M P S 6 5 2 0 , MPS6521 M P S 65 2 3 C o lle c to r-B a s e V o lta g e Unit 25 25 V dc v CB0 40 M P S 65 2 0, M P S 6521 M P S 65 2 3 25 Vebo 4.0 V dc C o lle c to r C u rre n t — C o n tin u o u s

MPS6523 equivalent

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Am plifier T ran sisto rs COLLECTOR 3 N PN M P S 65 2 1 * PN P 1 EMITTER M PS6523 COLLECTOR 3 Voltage and current are negative for PNP transistors •Motorola Preferred Device 1 EMITTER MAXIM UM RATINGS Rating Symbol C ollector-E m itter Voltage

2N915

Abstract: 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392
Contextual Info: 3M MOTORO LA SC { D I O D E S / O P T O 6367255 MOTOROLA SC »E | L3b?aSS 0 0 3 7 ^ 5 CD I O D E S / O P T O 34 C 37992 SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) 2C3904 DIE NO. — NPN LINE SOURCE — DMB105 This die provides performance similar to that of the following device types:

PS6521

Abstract: MPS6 PS6520
Contextual Info: M AXIM UM RATINGS Symbol Rating NPN PNP Unit V CEO C o llector-B ase V o lta g e M P S 652 0, M PS6521 M PS 6 52 3 v CBO Em itter-B ase V o lta g e v EBO 4.0 Vdc C o lle c to r C u rre n t — C o n tin u o u s ic 100 m Adc Total D evice D issip a tio n Cw T^ = 2 5 T

MJE340 MOTOROLA

Abstract: mjl21194 MOC223-M MCR265-006 MC79L12ACP MC79L05ACP mj15003 mje172 analog irf 846 mcr100-6 307
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

BC309 equivalent

Abstract: st 393 8-pin T0-226AE
Contextual Info: MOTOROLA SC XSTRS/R F MbE D • b3b?2S4 Oa'Obll b ■MOTb SMALL-SIGNAL BIPOLAR TRANSISTORS — PLASTIC-ENCAPSULATED TRANSISTORS (continued) 7 ^ jZ 7 - Cs5 Table 1. Plastic-Encapsulated General-Purpose Transistors (continued) Case 29-03 — T0-226AE (1-WATT T0-92)

MRF472

Abstract: MRF245 MRF243 MPSA13K MPS6579 MRF420 BF497 MRF304 MRF250 PE210B
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293

sx3704

Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Contextual Info: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are

BC237

Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10

BC237

Abstract: MPSA06 346
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste

BC237

Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

2N16

Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.

2n2222 h 331 transistors

Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Abstract: 2n2904 2n2905
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW55 MPSW56* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW55 MPSW56 Unit Collector – Emitter Voltage VCEO –60 –80 Vdc

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts