MPSA28 Search Results

MPSA28

Abstract: MPSA28RLRPG MPSA29 MPSA29G MPSA29RLRP MPSA29RLRPG MPS-A29
Contextual Info: MPSA28, MPSA29 MPSA29 is a Preferred Device Darlington Transistors NPN Silicon Features • Pb-Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage MPSA28 MPSA29 VCES 80 100 Vdc Collector-Base Voltage

Contextual Info: ON Semiconductort MPSA28 MPSA29* Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Unit Collector–Emitter Voltage VCES 80 100 Vdc Collector–Base Voltage VCBO 80 100 Vdc Emitter–Base Voltage

MPSA29 equivalent

Abstract: MPS-A29 BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA28 MPSA29* NPN Silicon COLLECTOR 3 *Motorola Preferred Device BASE 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Unit Collector – Emitter Voltage VCES 80 100 Vdc Collector – Base Voltage

Contextual Info: MPSA28 / MMBTA28 / PZTA28 MPSA28 MMBTA28 PZTA28 C C E C B TO-92 SOT-23 E B SOT-223 Mark: 3SS B E C NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03.

MMBTA28

Abstract: MPSA28 PZTA28 SP114 transistor b 1138
Contextual Info: MPSA28 I MMBTA28 I PZTA28 tt _ National Discrete POWER & Signal Technologies Semiconductor'“ MPSA28 MMBTA28 PZTA28 SOT-223 NPN Darlington Transistor Th is d e vice is d e sig n ed fo r a pp licatio n s requiring e xtre m ely high c u rre n t g a in at c o lle cto r cu rren ts to 500 m A. S ou rce d

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS MPSA28 / MPSA29 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage

bta28

Contextual Info: ss—s/ rcw o „ r;'rc n MPSA28 MMBTA28 PZTA28 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings TA = 25°C unless otherwise noted

Contextual Info: MPSA28 MPSA29* M AXIM UM RATINGS Symbol Rating CASE 29-04, STYLE 1 TO-92 TO-226AA Unit M PSA28 M PSA29 Collector-Emitter V oltage VCES 80 C ollector-Base V oltage VCBO 80 Em itter-Base V oltage v EBO 12 V dc >C 500 m A dc PD 625 5.0 mwrc Pd 1.5 12 W atts

MPS-A28

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA28 MPSA29* NPN Silicon COLLECTOR 3 ‘Motorola Preferred Device MAXIMUM RATINGS Symbol MPSA28 MPSA29 Collector- Emitter Voltage VCES 80 100 Vdc Collector- Base Voltage VCBO 80 100 Vdc Emitter-Base Voltage

MPSA28

Abstract: MPSA29
Contextual Info: ON Semiconductort MPSA28 MPSA29* Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Unit Collector–Emitter Voltage VCES 80 100 Vdc Collector–Base Voltage VCBO 80 100 Vdc Emitter–Base Voltage

transistor motorola 359

Abstract: MPSA28 MPSA29 MPSA42 MPSA43 MPSA44 transistor MPSA42 2904 g
Contextual Info: M PSA28 M PSA 29* MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Collector-Emitter Voltage VCES 80 100 Collector-Base Voltage VCBO 80 100 Emitter-Base Voltage Vdc Vdc vebo 12 Vdc Collector Current — Continuous 'c 500 mAdc Total Device Dissipation @ T /\ = 25°C

MPSA28

Abstract: MPSA29
Contextual Info: MPSA29 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPSA28

Abstract: MPSA28G MPSA28RLRP MPSA28RLRPG MPSA29 MPSA29G MPSA29RLRP MPSA29RLRPG Marking code mps
Contextual Info: MPSA28, MPSA29 MPSA29 is a Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSA28 MPSA29 VCES 80 100 Vdc

Contextual Info: S E M IC O N D U C T O R M PSA29 NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics. AbSOlUtG Maximum RâtinÇjS

Contextual Info: ON Semiconductort MPSA28 MPSA29* Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Unit Collector −Emitter Voltage VCES 80 100 Vdc Collector −Base Voltage VCBO 80 100 Vdc Emitter −Base Voltage

MMBTA28

Abstract: MPSA28 PZTA28
Contextual Info: MPSA28 MMBTA28 PZTA28 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings*

MPSA29

Abstract: MPSA28 MPSA28RLRPG MPSA29G MPSA29RLRP MPSA29RLRPG
Contextual Info: MPSA28, MPSA29 MPSA29 is a Preferred Device Darlington Transistors NPN Silicon Features • Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage MPSA28 MPSA29 VCES 80 100 Vdc Collector-Base Voltage

MPSA29

Abstract: MPSA28
Contextual Info: MOTOROLA Order this document by MPSA28/D SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA28 MPSA29* NPN Silicon COLLECTOR 3 *Motorola Preferred Device BASE 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Unit Collector – Emitter Voltage VCES

CBVK741B019

Abstract: F63TNR MPSA28 MPSA29 PN2222N BCxxx TRANSISTOR
Contextual Info: MPSA29 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: MPSA28, MPSA29 MPSA29 is a Preferred Device Darlington Transistors NPN Silicon Features • Pb-Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage MPSA28 MPSA29 VCES 80 100 Vdc Collector-Base Voltage

Contextual Info: S E M IC O N D U C T O R iM MPSA28 MMBTA28 SOT-23 PZTA28 B SOT-223 Mark: 3SS NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum RâtinÇjS

Contextual Info: MPSA27/PZTA27 MPSA27/PZTA27 NPN General Purpose Amplifier 4 • This device is designed for applications requiring extremely high current gain at collector currents to 500mA. • Sourced from process 03. • See MPSA28 for characteristics. 3 2 1 TO-92 1 1. Emitter 2. Base 3. Collector

MMBTA28

Abstract: MPSA28 PZTA28 transistor Vbe SOT23 1128
Contextual Info: MPSA28 MMBTA28 PZTA28 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings*

MPSA28

Abstract: MPSA29
Contextual Info: S E M IC O N D U C T O R M PSA29 NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics. Absolute Màximum RStinQS