MPSW01 Search Results

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MPSW01 Features • • Capable of 1.0Watts of Power Dissipation. Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MPSW01 Features • Capable of 1.0Watts of Power Dissipation. Pin Configuration Bottom View C B NPN High Current Transistor E TO-92 Maximum Ratings*

mps 444

Abstract: W01A mps w01a MPSW01AG MPSW01G MPSW01 MPSW01A MPSW01ARLRA MPSW01ARLRAG MPSW01ARLRP
Contextual Info: MPSW01, MPSW01A MPSW01A is a Preferred Device One Watt High Current Transistors NPN Silicon Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO MPSW01 MPSW01A Collector −Base Voltage

MPSW01

Abstract: MPSW01A
Contextual Info: MOTOROLA Order this document by MPSW01/D SEMICONDUCTOR TECHNICAL DATA One Watt High Current Transistors MPSW01 MPSW01A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage MPSW01 MPSW01A

T0-92

Contextual Info: bfiF T> bSOHBQ m General Purpose Amplifiers and Switches continued Devices V CHHsmt) (Volts) Min NPN 30 MPSW01A PHP MPSW51A Min Max NATL SEMICON]) (DISCRETE) fT @ l e,- " », Hf e @ I c •c (mA) Max □ D 3 C1SSE 73T « N S C S mA (MHz) Min M Ì NF (ÍB)

Contextual Info: MPSW01, MPSW01A One Watt High Current Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Symbol Rating Collector −Emitter Voltage MPSW01 MPSW01A Collector −Base Voltage MPSW01 MPSW01A

MPSW01

Contextual Info: MPSW01 NPN General Purpose Amplifier MPSW01 NPN General Purpose Amplifier Features • This device is designed for general purpose medium power amplifiers • Sourced from process 37 Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter

Contextual Info: MPSW01A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)625m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)1.0

mps 444

Abstract: MPSW01 MPSW01A MPSW01AG MPSW01ARLRAG MPSW01ARLRPG MPSW01G
Contextual Info: MPSW01, MPSW01A One Watt High Current Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Symbol MPSW01 MPSW01A MPSW01 MPSW01A Emitter −Base Voltage

mpsw

Contextual Info: MOTOROLA Order this document by MPSW01/D SEMICONDUCTOR TECHNICAL DATA One W att High Current Transistors MPSW01 MPSW01A* NPN Silicon COLLECTOR 3 •Motorola Preferred Device EMITTER M AXIM UM RATINGS Rating Symbol C ollector-Em itter Voltage Unit Value Vdc

MPSW01

Abstract: MPSW01A
Contextual Info: ON Semiconductort MPSW01 MPSW01A * One Watt High Current Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Value Unit VCEO MPSW01 MPSW01A Vdc 30 40 Collector–Base Voltage VCBO MPSW01 MPSW01A

MPSW

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Current Transistors MPSW01 MPSWOIA* NPN Silicon ‘M otorola Preferred D evice MAXIMUM RATINGS Rating Sym bol C o lle c to r- Emitter Voltage Value Unit Vdc v CEO M PSW 01 M P SW 01 A C o lle c to r-B a s e Voltage

mps 2905

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One W att High Current Transistors MPSW01 MPSW01A* NPN Silicon COLLECTOR 'Motorola Preferred Device MAXIMUM RATINGS Rating Symbol C ollector-Em itter Voltage Value Unit Vdc VCEO 30 40 MPSW01 MPSW01A C ollector-B ase Voltage

Contextual Info: ON Semiconductort MPSW01 MPSW01A * One Watt High Current Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MPSW01 MPSW01A VCEO Collector −Base Voltage VCBO Unit Vdc 30 40 MPSW01 MPSW01A

Contextual Info: MPSW01 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)1.0

MPSW01

Abstract: MPSW01A
Contextual Info: ON Semiconductort MPSW01 MPSW01A * One Watt High Current Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Value Unit VCEO Vdc MPSW01 MPSW01A 30 40 Collector–Base Voltage VCBO 2 40 50 Emitter–Base Voltage

marking w01

Contextual Info: MPSW01 NPN General Purpose Amplifier MPSW01 NPN General Purpose Amplifier Features • This device is designed for general purpose medium power amplifiers • Sourced from process 37 Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter

w01a

Abstract: mps w01a MPSW01 MPSW01A MPSW01AG MPSW01ARLRA MPSW01ARLRAG MPSW01ARLRP MPSW01G
Contextual Info: MPSW01, MPSW01A MPSW01A is a Preferred Device One Watt High Current Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO MPSW01

MPSW01

Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MPSW01 Features • Capable of 1.0Watts of Power Dissipation. Pin Configuration Bottom View C B NPN High Current Transistor E TO-92 Maximum Ratings* Symbol V CEO V CBO

MPS6520 equivalent

Abstract: BC237 transistor Vbe 2n2222 Characteristic curve BC107
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Current Transistors MPSW01 MPSW01A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage MPSW01 MPSW01A VCEO Collector – Base Voltage

MPSW01

Abstract: mpsw01a MPSW01AG MPSW01ARLRAG MPSW01ARLRPG MPSW01G MPSW01ARLRP
Contextual Info: MPSW01, MPSW01A One Watt High Current Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Symbol MPSW01 MPSW01A MPSW01 MPSW01A

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MBR1620CT

Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
Contextual Info: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty