MRF200 Search Results

Contextual Info: MOTOROLA Order this document by MRF2000–5L/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Linear Power Transistor MRF2000-5L Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range. • Designed for Class A or AB, Common Emitter Power Amplifiers

Contextual Info: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts

TIC48

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF2000-5L The RF Line M icrowave Linear Power Transistor Motorola Preferred Device Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2 .0 G H z frequency range. • 7 .0 -8 .0 dB GAIN

DM 0265 R pin EQUIVALENT

Abstract: MRF2005 724 motorola NPN Transistor
Contextual Info: lEE D I MOTOROLA fc.3L.72SM 0 0 0 0 0 4 0 MOTOROLA SC T-33-0? fi | XSTRS/R F SEMICONDUCTOR TECHNICAL DATA MRF2005M The RF Line S .O W 2 GHz NPN SILICON MICROWAVE POWER TRANSISTOR M IC R O W A V E POWER TR A N S IS T O R . . . designed fo r Class B and C co m m o n b ase broadband am p lifie r

DBT134

Contextual Info: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this

M 015 j47

Abstract: Diode FAJ 32
Contextual Info: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M R F20060R M RF20060RS The M R F 20 06 0R and M R F 20 06 0R S are desig ned fo r b roadband com m e rcial and industrial ap plicatio ns at fre q u e n cie s from 1800 to 2 0 00 M Hz. T he high gain,

bd135 equivalent

Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M RF20060 M RF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high

MRF2003

Abstract: RF2005 MRF2005
Contextual Info: 1EE D I b3fc.72SM MOTOROLA MOTOROLA SC 0000020 XSTRS/R ? | T 'iS - o C ? F SEMICONDUCTOR MRF2003 MRF2003B TECHNICAL DATA The R F Line 3.0 W 2 GHz MICROWAVE POWER TRANSISTORS NPN SILICON MICROWAVE POWER TRANSISTORS NPN S IL IC O N . . . designed fo r Class B and C am plifie r or oscillator applications

451a0

Abstract: motorola rf power transistors mtbf
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz.

Contextual Info: Order this data sheet by MRF2000-5L/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e RF Line MRF2000-5L M icrow ave Linear Power TVansistor M otorola P referred D evice Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range.

mrf2001

Abstract: RF2005 MRF2005
Contextual Info: lEE D I b3fci7254 ÜOflñOEO 2 | MO TOR OLA SC T - XSTRS/R F MOTOROLA SEM ICO NDUCTOR MRF2001 MRF2001B TECHNICAL DATA The RF Line 1.0 W NPN SILICON MICROWAVE POWER TRANSISTORS 2 GHz MICROWAVE POWER TRANSISTORS NPN S IL IC O N , . . designed fo r Class B and C am p lifie r o r oscillator applications

MRF2003M

Contextual Info: 12E D I MOTOROLA fei3tj?ESM MOTORCLA a0ññG3a SC r-33-07 1 | X S T R S /R F SEMICONDUCTOR TECHNICAL DATA MRF2003M T h e R F L in e 3.0 W 2 GHz M IC R O W A V E POWER T R A N SISTO R NPN SILICON MICROWAVE POWER TRANSISTOR N P N S IL I C O N . . . designed for Class B and C com m on base broadband amplifier

MRF2005

Abstract: RF2010 MRF2005B rf2001 rf2003 MRF2003
Contextual Info: 12E 0 I b3t,7E54 GDñóGBb b | MO TORCLA SC MOTOROLA XSTRS/R F SEM ICO NDUCTOR MRF2005 MRF2005B TECHNICAL DATA The RF Line 5 .0 W NPN SILICON MICROWAVE POWER TRANSISTORS 2 GHz MICROWAVE POWER TRANSISTORS NPN S IL IC O N . . . designed fo r Class B and C am plifie r or oscillator applications

bd136 equivalent

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ pl 032 pif FL 032 PIF
Contextual Info: MOTOROLA Order this document by MRF20060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high

BD136

Abstract: MJD47 MRF20060R MRF20060RS MURS160T3 rohm mtbf
Contextual Info: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts

169 MHz RF CHIP

Abstract: motorola rf power transistors mtbf 015 j47 5659065 bipolar transistor s-parameter DIODE 851 MOTOROLA GX-0300-55-22 BD136 MJD47 MRF20060R
Contextual Info: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M R F20060R M RF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz.

Motorola 946

Abstract: MRF2003 BD136 MJD47 MRF20030R RF amplifier mtbf
Contextual Info: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030
Contextual Info: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this

RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 BD135 MJD47 MRF20060 MRF20060S RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x
Contextual Info: MOTOROLA Order this document by MRF20060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high

mallory 150 series

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this

MR2001

Abstract: MRF2005 MRF2016M MRF2003 MRF2003M MRF2001M microwave amplifier 2.4 ghz 10 watts Motorola Microwave power Transistor MRF2010 Narrowband
Contextual Info: RF PRODUCTS — BIPOLAR POWER TRANSISTORS continued CASE 328A-01 f/i. .230' Flangei CASE 337-02 (m .290" Flange) Microwave Applications (continued) 1.7-2.3 GHz Broadband CW The MRF2000M Series of transistors have internal input impedance matching networks which facilitate broadband circuit designs

VARIABLE capacitor

Contextual Info: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA MRF20060R MRF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices

Contextual Info: MOTOROLA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common–emitter class AB amplifier

bd136 equivalent

Abstract: DIODE 851 MOTOROLA MOTOROLA ELECTROLYTIC CAPACITOR BD136 MJD47 MRF20060R MRF20060RS MURS160T3 RF NPN POWER TRANSISTOR 3 GHZ 5w 150 j47
Contextual Info: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz.