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    MRF5812 Search Results

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    MRF5812 Price and Stock

    Microchip Technology Inc MRF5812

    RF TRANS NPN 15V 5GHZ 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF5812 Bulk 2,500
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    Microchip Technology Inc MRF5812G

    RF TRANS NPN 15V 5GHZ 8SO
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    DigiKey MRF5812G Bulk 2,500
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    Microchip Technology Inc MRF5812M

    TRANS NPN 15V 200MA
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    Microchip Technology Inc MRF5812R1

    RF TRANS NPN 15V 5GHZ 8SO
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    DigiKey MRF5812R1 Reel 2,500
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    Microchip Technology Inc MRF5812MR1

    TRANS NPN 15V 200MA
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    Find more MRF5812 price and stock on Findchips.com

    MRF5812 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF5812 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF
    MRF5812 Advanced Semiconductor NPN SILICON RF MICROWAVE TRANSISTOR Original PDF
    MRF5812 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
    MRF5812 Motorola NPN Silicon RF Low Power Transistor Scan PDF
    MRF5812 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MRF5812G Microsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN 15V 200MA SO8 Original PDF
    MRF5812GR1 Advanced Power Technology RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 15V 200MA 8-SOIC Original PDF
    MRF5812GR1 Microsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN 15V 200MA 8-SOIC Original PDF
    MRF5812GR2 Advanced Power Technology RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 15V 200MA 8-SOIC Original PDF
    MRF5812GR2 Microsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN 15V 200MA 8-SOIC Original PDF
    MRF5812R1 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF
    MRF5812R1 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
    MRF5812R1 Motorola 200 mA Low-noise, High Frequency Transistor Original PDF
    MRF5812R2 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF
    MRF5812R2 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
    MRF5812R2 Motorola 200 mA Low-noise, High Frequency Transistor Original PDF

    MRF5812 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF5812

    Abstract: mrf5812 equivalent *3004 SO8
    Text: MRF5812 NPN SILICON RF MICROWAVE TRANSISTOR PACKAGE STYLE SO-8 DESCRIPTION: The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. FEATURES: • Low Noise – 2.5 dB @ 500 MHz • Ftau – 5.0 GHz @ 10 V, 75 mA • Cost Effective SO-8 package


    Original     		PDF MRF5812 MRF5812 mrf5812 equivalent *3004 SO8

    transistor fb 31n

    Abstract: MRF5815 case 317-01 mrf581 SF-11N 5812 MOTOROLA 118-136 mhz specifications of ic 1408 MRF5812 MRF5812R1
    Text: MOTOROLA Order this document by MRF581/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF581 High-Frequency Transistors MRF5812R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion


    Original     		PDF MRF581/D MRF581 MRF5812R1, MRF5812 MRF581 transistor fb 31n MRF5815 case 317-01 SF-11N 5812 MOTOROLA 118-136 mhz specifications of ic 1408 MRF5812R1

    Untitled

    Abstract: No abstract text available
    Text: MRF5812 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)15


    Original     		PDF MRF5812

    MRF5812

    Abstract: mrf5812 equivalent S-parameter 2N5179 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF5812, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA


    Original     		PDF MRF5812, BFR91 BFR90 MRF545 MRF544 MSC1319 MRF5812 mrf5812 equivalent S-parameter 2N5179 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607

    MRF5812

    Abstract: No abstract text available
    Text: MRF5812, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units


    Original     		PDF MRF5812, MRF545 MRF544 MRF5812

    S-parameter 2N5179

    Abstract: s-parameter 2N3866a s-parameter 2N4427 MRF5812GR1 s-parameter transistor 2N4427 MRF5812 s-parameter 2N2857 2n2857 common base amplifier MRF5812G 2N5179
    Text: MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units


    Original     		PDF MRF5812, MRF5812G, S-parameter 2N5179 s-parameter 2N3866a s-parameter 2N4427 MRF5812GR1 s-parameter transistor 2N4427 MRF5812 s-parameter 2N2857 2n2857 common base amplifier MRF5812G 2N5179

    MRF581

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF5812, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA


    Original     		PDF MRF5812, BFR90 MRF545 MRF544 MRF581/MRF581A MRF581

    MRF5812

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF5812, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA


    Original     		PDF MRF5812, MRF5812

    Untitled

    Abstract: No abstract text available
    Text: MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units


    Original     		PDF MRF5812, MRF5812G,

    MRF581G

    Abstract: MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581
    Text: MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA


    Original     		PDF MRF581 MRF581G MRF581A MRF581AG 2N6255 2N5179 MRF581G MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    mce544

    Abstract: bfr96 equivalent MC3042 Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630
    Text: MC3042 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC3042 is a high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! 1Watt Output Power @ 400MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original     		PDF MC3042 400MHz SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA mce544 bfr96 equivalent Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630

    2N4427

    Abstract: 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427
    Text: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39


    Original     		PDF 2N4427 To-39 MRF4427, 2N4427 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427

    MHW707-2

    Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
    Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


    Original     		PDF 714U/1 MHLW8000 MHW707-2 MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861

    MRF586

    Abstract: MRF517 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA


    Original     		PDF MRF517 To-39 MRF571 BFR91 BFR90 MRF545 MRF544 MRF517 MRF586 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904

    BFR91 transistor

    Abstract: 2N5109 BFR90 transistor BFR91 BFR96 datasheet for transistor bfr96 mrf559 v mrf5812 equivalent MRF586 transistor bfr96
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB


    Original     		PDF MRF557 BFR90 MRF545 MRF544 MRF557 BFR91 transistor 2N5109 BFR90 transistor BFR91 BFR96 datasheet for transistor bfr96 mrf559 v mrf5812 equivalent MRF586 transistor bfr96

    RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

    Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 2N5179 2N3866A 2N4427 2N6255 MRF4427 MRF553
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •


    Original     		PDF 2N5109 To-39 2N5109 MRF559 MRF4427, 2N4427 MRF553 MRF553T MRF607 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5179 2N3866A 2N4427 2N6255 MRF4427 MRF553

    MRF553G

    Abstract: 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics


    Original     		PDF MRF553 MRF553G MRF553G 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    microlab fc 730

    Abstract: 5812 MOTOROLA motorola MRF5812 MRF581 MRF5812 mrf5812 equivalent MRF 434 mhz MRF 482
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MRF581 MRF5812R1,R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion • High Gain lc = 200 mA


    OCR Scan     		PDF MRF5812 MRF581 MRF5812R1 MRF581 MRF5812 K-200, 56-590-65/3B microlab fc 730 5812 MOTOROLA motorola MRF5812 mrf5812 equivalent MRF 434 mhz MRF 482

    RF5812

    Abstract: motorola MRF5812 MRF5812 mrf5812 equivalent
    Text: MOTOROLA Order this document by MRF581/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MRF581 MRF5812R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion


    OCR Scan     		PDF MRF581/D MRF5812 MRF581 MRF5812R1, MRF5812 RF5812 motorola MRF5812 mrf5812 equivalent

    TE 2549 MOTOROLA

    Abstract: MRF581A motorola MRF5812 RF581 MRF581
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF581 MRF581A MRF5812, R1, R2 NPN Silicon H igh-Frequency Transistors Designed for high current low power am plifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion •


    OCR Scan     		PDF MRF5812 MRF581 MRF581A MRF5812, TE 2549 MOTOROLA motorola MRF5812 RF581

    MRF581A

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF581 MRF581A MRF5812, R1,R2 NPN Silicon High-Frequency Transistors D e signed for high current low power amplifiers up to 1.0 GHz. • Low N oise 2.0 d B @ 5 0 0 M H z • Low Intermodulation Distortion


    OCR Scan     		PDF MRF581 MRF581A MRF5812, 56-590-65/3B

    mrf5812 equivalent

    Abstract: MRFS812 MRF5812 RF5812 MRF581 MRFS81
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilicon H igh-Frequency Transistors MRF581 MRF5812R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion lc = 200 mA LOW NOISE


    OCR Scan     		PDF F5812 MRF581 MRF5812R1, MRF581 MRFS812 VK-200, 56-590-65/3B mrf5812 equivalent MRF5812 RF5812 MRFS81