MRF5836HX Search Results

Contextual Info: MRF5836HX Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)15 I(C) Max. (A)200m Absolute Max. Power Diss. (W)750m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)10

Contextual Info: MRF5836HXV Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)15 I(C) Max. (A)200m Absolute Max. Power Diss. (W)750m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)10

MRF660

Abstract: MHQ6002HX MHM25N20HX MBR5825 MRF5160 MM3227H MHM12N50HX MBR5825H MM3227 mrf522
Contextual Info: MOTOROLA SC XSTRS/R F 2 bE D • b3b?2S4 GGT0Ô7G 4 ■ T - MIL-Processed Semiconductors (Continued) SELECTOR GUIDE POWER TRANSISTORS TMOS FETs These TMOS Power FETs are designed for high speed power switching applications such as switching regulators, converters, solenoid and relay drivers, and PWM motor

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

2N5835

Abstract: MRF583 2n6837 2n5836 MRF5836
Contextual Info: MOTOROLA SEM ICONDUCTOR 2N5835 2N5836 2N5837 TECHNICAL DATA The R F L in e 2.5 GHz @ 10 m A dc - 2N583S 2.0 GHz @ 50 m A dc - 2N5836 1.7 GHz @ 100 m Adc - 2N5837 NPN SIL IC O N H IG H -FR EQ U EN CY T R A N SIS T O R S HIGH F REQ U EN C Y T R A N SIS T O R S