MRF64 Search Results

transistor rf m 1104

Abstract: motorola rf Power Transistor motorola rf 1104 Power Transistor SD135 MOTOROLA TRANSISTOR T2 100 mf capacitor Motorola 1N4007 transistor 228 npn motorola motorola rf device MRF641
Contextual Info: MOTOROLA Order this document by MRF6414PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 PHOTOMASTER NPN Silicon RF Power Transistor CASE 333A– 02, STYLE 2 C9 +VCC T2 R1 C8 P1 C5 D1 C7 C6 D2 C4 R2 RF OUTPUT RF INPUT C3 T1 50 W C1 50 W C1, C3 C2, C7

mrf641

Abstract: 1117 ADC
Contextual Info: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.

Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

motorola rf Power Transistor

Abstract: motorola 1N4148 1N4148 BD135 MRF6402 5Bp smd transistor data SMD DIODE gp 317
Contextual Info: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast

MRF644

Abstract: MOTOROLA 381 equivalent NPN TRANSISTOR Z4 TRANSISTOR J214
Contextual Info: MOTOROLA Order this document by MRF644/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 06/07/00 The RF Line MRF644 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.

TRANSISTOR A331

Abstract: 395C-01
Contextual Info: MOTOROLA MRF6404 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

MOTOROLA 381 equivalent

Contextual Info: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 06/07/00 The RF Line MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.

552 transistor motorola

Abstract: MRF6403 1403 Motorola zd 409
Contextual Info: Order this data sheet by MRF6403/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6403 NPN Silicon RF Power Transistor The MRF6403 is designed for 1.8 GHz Personal Communications Network PCN base station applications. It incorporates high value emitter ballast resistors, gold

motorola rf device

Abstract: DL110 BAS16 transistor DL1100 Motorola Power Transistor Data Book
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The M RF6409 is designed for GSM base stations applications. It incorpo­ rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.

MRF6402

Abstract: transistor SMD J9 transistor J9 TRANSISTOR Bd135 diode 1n4148
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6402 The RF Line NPN Silicon RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and

MRF6401

Contextual Info: MOTOROLA Order this document by MRF6401/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6401 is d e signed fo r C lass A com m on e m itter, lin e a r pow er am plifiers in the 1 .0 - 2 .0 GHz frequency range. It has been sp e cifica lly

Motorola 1N4007

Abstract: motorola MRF6 mrf6 transistor 228 npn motorola
Contextual Info: MOTOROLA Order this document by MRF6414PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 PHOTOMASTER NPN Silicon RF Pow er TVansistor C1, C2, C5, C6 C9 D1, C3 C7 C8 D2 100 pF, Chip Capacitor, Hight Q 330 pF, Chip Capacitor, 0805 10 nF, Chip Capacitor, 0805

MRF641

Contextual Info: MRF641 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF641 is Designed for Class C, FM Land Mobile Applications up to 512 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 7.8 dB at 15 W/470 MHz • Omnigold Metalization System

RF NPN POWER TRANSISTOR C 10-50 GHZ

Abstract: 3 pin TRIMMER capacitor ATC100A MJD31C MRF6408 smd z12 transistor 6 pin SMD Z2 37281 smd transistor z4
Contextual Info: MOTOROLA Order this document by MRF6408/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Power Transistor Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers

DIODE SMD 012 MOTOROLA

Abstract: PL 431 transistor
Contextual Info: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 13/11/99 The RF Line MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast

smd transistor bcv62

Abstract: SMD Transistor Y14 TRANSISTOR HK SMD Transistor t 2 smd motorola 8B TRANSISTOR SMD RTW 317 SMD smd transistor 8B
Contextual Info: * w rtw fc # » Order this document by MRF6401PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor C1 C2 C3 C4, C6, C7, C9 C5 C8 C10 C11 1.5 pF, ATC Chip Capacitor 100A 3.9 pF, ATC Chip Capacitor 100A 56 pF. ATC Chip Capacitor 100A

diode 1N4148 SMD PACKAGE DIMENSION

Abstract: motorola 1N4148 SMD DIODE gp 317 Transistor t 2 smd motorola 100 pf, ATC Chip Capacitor 100A 3 w RF POWER TRANSISTOR NPN BALLAST MOTOROLA bd135 n transistor 431 ab 1N4148
Contextual Info: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast

MRF6401 PHOTOMASTER

Abstract: 305C BCV62 MRF6401 TL11 100 pf, ATC Chip Capacitor motorola base station 1995
Contextual Info: MOTOROLA Order this document by MRF6401/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6401 The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 – 2.0 GHz frequency range. It has been specifically

RF640

Abstract: ez808 transistor b 745 RF6404 capacitor 104 Z5 R/Vitramon
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Pow er Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. 30 W , 1.88 GHz

transistor bd135

Abstract: TRANSISTOR 4148 Diode 1N 4148 transistor J9
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Com m unications Network PCN base stations applications. It incorporates high value em itter ballast re s is to rs , gold m e ta lliz a tio n s and o ffe rs a high de g re e of re lia b ility and

43 JO smd

Abstract: 1c smd transistor transistor bd135 chip PCN resistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The M RF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold m etallizations and offers a high degree of reliability and

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6403 is designed for 1.8 GHz Personal Communications Network PCN base station applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and

11Z4

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

SMD Transistor z6

Abstract: 37281 transistor 6 pin SMD Z2 transistor SMD Z2 motorola 986 MRF6408 z11 smd SMD 1206 RESISTOR 100 OHMS smd z5 transistor transistor amplifier 3 ghz 10 watts
Contextual Info: MOTOROLA Order this document by MRF6408/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Power Transistor Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers