RF640 Search Results

motorola rf device

Abstract: DL110 BAS16 transistor DL1100 Motorola Power Transistor Data Book
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor RF6409 The M RF6409 is designed for GSM base stations applications. It incorpo­ rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.

43 JO smd

Abstract: 1c smd transistor transistor bd135 chip PCN resistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor RF6402 The M RF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold m etallizations and offers a high degree of reliability and

RF640

Contextual Info: International 3X3R Rectifier PD-9S02# IR F 6 4 0 S /L p r e l im in a r y HEXFET Power MOSFET • • • • • • • Surface Mount I RF640S Low-profile through-hole (RF640L) Available in Tape & Reel (RF640S) Dynamic dv/dt Rating 150°C Operating Temperature

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

MRF6401

Contextual Info: MOTOROLA Order this document by RF6401/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The RF6401 is d e signed fo r C lass A com m on e m itter, lin e a r pow er am plifiers in the 1 .0 - 2 .0 GHz frequency range. It has been sp e cifica lly

siemens simatic op17 manual

Abstract: SIMATIC Field PG IPC547D Siemens s7 1200 manual IPC427C SIWATOOL RS232 Cable IPC677C siemens a5e00 MTBF SIEMENS electric motor S7-200 cpu 215
Contextual Info: Siemens AG 2013 Products for Totally Integrated Automation SIMATIC Catalog ST 70 Edition 2013 Answers for industry. © Siemens AG 2013 Related catalogs Industrial Communication SIMATIC NET IK PI E86060-K6710-A101-B7-7600 SIMATIC HMI / ST 80/ST PC PC-based Automation

Contextual Info: REVISION F SCRES-X-XX.XX-XX DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] PLATING SPECIFICATION -G: .000050" GOLD ON CONTACT AREAS, NICKEL ON SHELLS DO NOT SCALE FROM THIS PRINT AND -0.50 ARE CATALOG STANDARD LENGTHS. *NOTE: -0.25 FOR OTHER LENGTHS CONTACT SAMTEC.

RF640

Abstract: ez808 transistor b 745 RF6404 capacitor 104 Z5 R/Vitramon
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF6404 RF6404K The RF Line NPN Silicon RF Pow er Transistor The RF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. 30 W , 1.88 GHz

Contextual Info: • 4302271 QDS4033 T04 ■ 2 H A R R IS HAS IR F640/641/642/643 IR F640R /641R /642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T0-22QAB TOP VIEW • 16A and 18A, 150V - 200V • rDS(on = 0 .1 8 0 and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*

Contextual Info: MOTOROLA Order this document by RF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor T he M R F 6 4 0 4 is d e sig ned fo r 26 vo lts m icro w a ve large sig na l, com m o n em itter, cla ss AB linea r a m p lifie r a p p lica tio n s op e ra tin g in th e range 1.8 to

IRFG43

Abstract: motor driver IRF640
Contextual Info: HE 0 I 4055455 0000504 1 | Data Sheet No. PD-9.374F ST- A T INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER TOR REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFS40 IRFG41 IRF642 IRFG43 N-CHANNEL 200 Volt, 0.18 Ohm HEXFET T0-220AB Plastic Package

RF640

Abstract: RF NPN POWER TRANSISTOR 2 GHZ
Contextual Info: MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA The RF Line NPN Silicon RF Power TVansistor The M R F6404 is designed for 1.8 G Hz Personal Communications Network PCN base station applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and

Contextual Info: SCRES-X-XX.XX-XX DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] REVISION M PLATING SPECIFICATION -G: .000050" GOLD ON CONTACT AREAS, NICKEL ON SHELLS END OPTION -D: DOUBLE ENDED ONE END SEALED (SEE FIG 1, SHT. 1) -BC: BLUNT CUT (SEE FIG 2, SHT. 2) LENGTH

Contextual Info: REVISION L SCRES-X-XX.XX-XX DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] PLATING SPECIFICATION -G: .000050" GOLD ON CONTACT AREAS, NICKEL ON SHELLS END OPTION -D: DOUBLE ENDED ONE END SEALED (SEE FIG 1, SHT. 1) -BC: BLUNT CUT (SEE FIG 2, SHT. 2) LENGTH

Contextual Info: SCRES-X-XX.XX-XX DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] REVISION N PLATING SPECIFICATION -G: .000050" GOLD ON CONTACT AREAS, NICKEL ON SHELLS END OPTION -D: DOUBLE ENDED ONE END SEALED (SEE FIG 1, SHT. 1) -BC: BLUNT CUT (SEE FIG 2, SHT. 2) LENGTH