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    MRF9060 Search Results

    MRF9060 Datasheets (26)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MRF9060
    Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 229.69KB 12
    MRF9060
    Freescale Semiconductor MRF9060LR1, MRF9060LSR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs Original PDF 537.72KB 12
    MRF9060
    Motorola MRF9060, MRF9060S, MRF9060SR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs Original PDF 175.01KB 12
    MRF9060LR1
    Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 229.68KB 12
    MRF9060LR1
    Freescale Semiconductor 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Original PDF 537.71KB 12
    MRF9060LR5
    Freescale Semiconductor RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-360 Original PDF 12
    MRF9060LSR1
    Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 229.68KB 12
    MRF9060LSR1
    Freescale Semiconductor 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Original PDF 537.71KB 12
    MRF9060LSR1
    Motorola RF Power Field Effect Transistor Original PDF 394.28KB 12
    MRF9060M
    Freescale Semiconductor MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs Original PDF 624.86KB 12
    MRF9060MBR1
    Freescale Semiconductor 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Original PDF 624.86KB 12
    MRF9060MBR1
    Freescale Semiconductor 60W TO272 DUAL LEAD Original PDF 511.76KB 16
    MRF9060MBR1
    Motorola 945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Original PDF 425.34KB 12
    MRF9060MBR1
    Motorola RF Power Field Effect Transistor Original PDF 425.16KB 12
    MRF9060MR1
    Freescale Semiconductor 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Original PDF 624.86KB 12
    MRF9060MR1
    Freescale Semiconductor RF PWR FET 60W TO-270 Original PDF 511.76KB 16
    MRF9060MR1
    Motorola 945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Original PDF 425.34KB 12
    MRF9060MR1
    Motorola RF Power Field Effect Transistor Original PDF 425.16KB 12
    MRF9060NBR1
    Freescale Semiconductor RF Power Field Effect Transistors Original PDF 509.74KB 16
    MRF9060NBR1
    Freescale Semiconductor 60W, 1GHZ, FET, TO-272N Original PDF 454.46KB 12
    SF Impression Pixel

    MRF9060 Price and Stock

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    NXP Semiconductors MRF9060LR1

    RF MOSFET LDMOS 26V NI360
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF9060LR1 Reel
    • 1 -
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    NXP Semiconductors MRF9060LR5

    RF MOSFET LDMOS 26V NI360
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF9060LR5 Reel 50
    • 1 -
    • 10 -
    • 100 $38.23
    • 1000 $37.01
    • 10000 $37.01
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    NXP Semiconductors MRF9060NR1

    RF MOSFET LDMOS 26V TO270-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF9060NR1 Reel 500
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    • 1000 $26.59
    • 10000 $26.59
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    Verical () MRF9060NR1 220 25
    • 1 -
    • 10 -
    • 100 $37.61
    • 1000 $33.65
    • 10000 $31.68
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    MRF9060NR1 27 25
    • 1 -
    • 10 -
    • 100 $37.61
    • 1000 $33.65
    • 10000 $31.68
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    Rochester Electronics LLC MRF9060MR1

    RF MOSFET 26V TO270-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF9060MR1 Bulk 10
    • 1 -
    • 10 $31.41
    • 100 $31.41
    • 1000 $31.41
    • 10000 $31.41
    Buy Now

    Rochester Electronics LLC MRF9060NR1

    RF MOSFET LDMOS 26V TO270-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF9060NR1 Bulk 10
    • 1 -
    • 10 $32.94
    • 100 $32.94
    • 1000 $32.94
    • 10000 $32.94
    Buy Now

    MRF9060 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RF-35-0300

    Abstract: A04T-5 93F2975 A113 MRF9060MBR1 MRF9060MR1 100B470JP 100B100JP 44F3360
    Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original
    MRF9060M/D MRF9060MR1 MRF9060MBR1 RF-35-0300 A04T-5 93F2975 A113 MRF9060MBR1 100B470JP 100B100JP 44F3360 PDF

    RF-35-0300

    Abstract: MRF9060 MRF9060LSR1 MRF9060R1 MRF9060S MRF9060L
    Contextual Info: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original
    MRF9060/D MRF9060R1 MRF9060LSR1 MRF9060R1 RF-35-0300 MRF9060 MRF9060LSR1 MRF9060S MRF9060L PDF

    MRF9060l equivalent

    Abstract: MRF9060 equivalent MRF9060L
    Contextual Info: Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 2, 12/2005 RF Reference Design Library RF Power Field Effect Transistors MRF9060LR1 MRF9060LSR1 Narrowband CDMA


    Original
    MRF9060LR1 MRF9060LSR1 MRF9060l equivalent MRF9060 equivalent MRF9060L PDF

    Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original
    MRF9060M/D MRF9060MR1 MRF9060MBR1 DEVICEMRF9060M/D PDF

    93F2975

    Abstract: Motorola 305
    Contextual Info: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original
    MRF9060/D MRF9060 MRF9060S MRF9060SR1 93F2975 Motorola 305 PDF

    MRF9060

    Abstract: MRF9060LR1 MRF9060LSR1 MRF9060S 9600MHz
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9060 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original
    MRF9060 MRF9060LR1 MRF9060LSR1 MRF9060LR1 MRF9060 MRF9060LSR1 MRF9060S 9600MHz PDF

    ATC100B100JT500XT

    Abstract: MRF9060NR1 945 TRANSISTOR FREESCALE PACKING MARKING WB1 A113 ATC100B3R9CT500XT ATC100B470JT500XT JESD22 MRF9060NBR1
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 13, 6/2009 RF Power Field Effect Transistor MRF9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original
    MRF9060N MRF9060NR1 ATC100B100JT500XT MRF9060NR1 945 TRANSISTOR FREESCALE PACKING MARKING WB1 A113 ATC100B3R9CT500XT ATC100B470JT500XT JESD22 MRF9060NBR1 PDF

    MRF9060

    Abstract: MRF9060R1 MRF9060S MRF9060SR1 MRF9060 equivalent
    Contextual Info: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original
    MRF9060/D MRF9060R1 MRF9060SR1 MRF9060R1 MRF9060 MRF9060S MRF9060SR1 MRF9060 equivalent PDF

    A113

    Abstract: MRF9060NBR1 MRF9060NR1
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060NR1 MRF9060NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original
    MRF9060N MRF9060NR1 MRF9060NBR1 MRF9060NR1 A113 MRF9060NBR1 PDF

    Contextual Info: Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original
    MRF9060 MRF9060LR1 MRF9060LSR1 PDF

    RF-35-0300

    Abstract: MRF9060 MRF9060LR1 MRF9060LSR1 MRF9060S marking wb1 MRF9060L
    Contextual Info: Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original
    MRF9060 MRF9060LR1 MRF9060LSR1 MRF9060LR1 RF-35-0300 MRF9060 MRF9060LSR1 MRF9060S marking wb1 MRF9060L PDF

    Contextual Info: Freescale Semiconductor Technical Data MRF9060M Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9060NR1 MRF9060NBR1 MRF9060MR1 MRF9060MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original
    MRF9060M MRF9060NR1 MRF9060NBR1 MRF9060MR1 MRF9060MBR1 PDF

    100B0R5BP

    Abstract: MRF9060L
    Contextual Info: Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original
    MRF9060 MRF9060LR1 MRF9060LSR1 100B0R5BP MRF9060L PDF

    Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies


    Original
    MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D PDF

    A113

    Abstract: MRF9060MBR1 MRF9060MR1
    Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc. Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original
    MRF9060M/D MRF9060MR1 MRF9060MBR1 MRF9060MR1 A113 MRF9060MBR1 PDF

    motorola MOSFET 935

    Abstract: MRF9060LR1 MRF9060LSR1 MRF9060S MRF9060 MRF9060L
    Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original
    MRF9060/D MRF9060LR1 MRF9060LSR1 MRF9060LR1 motorola MOSFET 935 MRF9060LSR1 MRF9060S MRF9060 MRF9060L PDF

    pd 223

    Abstract: MARKING WB1 A113 MRF9060M MRF9060MBR1 MRF9060MR1
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9060M Rev. 9, 5/2006 Replaced by MRF9060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original
    MRF9060M MRF9060NR1/NBR1. MRF9060MR1 MRF9060MBR1 pd 223 MARKING WB1 A113 MRF9060M MRF9060MBR1 PDF

    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9060M Rev. 9, 5/2006 Replaced by MRF9060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original
    MRF9060M MRF9060NR1/NBR1. MRF9060MR1 MRF9060MBR1 MRF9060MR1 PDF

    93F2975

    Contextual Info: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original
    MRF9060/D MRF9060 MRF9060S MRF9060SR1 93F2975 PDF

    motorola MOSFET 935

    Abstract: MRF9060 MRF9060LR1 MRF9060LSR1 MRF9060S
    Contextual Info: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original
    MRF9060/D MRF9060LR1 MRF9060LSR1 MRF9060LR1 motorola MOSFET 935 MRF9060 MRF9060LSR1 MRF9060S PDF

    Contextual Info: Freescale Semiconductor Technical Data MRF9060M Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9060NR1 MRF9060NBR1 MRF9060MR1 MRF9060MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original
    MRF9060M MRF9060NR1 MRF9060NBR1 MRF9060MR1 MRF9060MBR1 PDF

    MARKING WB1

    Abstract: ATC100B0R5BT500XT ATC100B470JT500XT MRF9060 MRF9060LR1 MRF9060S T491D106K035AT
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9060 - 2 Rev. 11, 9/2008 RF Power Field Effect Transistor MRF9060LR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original
    MRF9060 MRF9060LR1 MARKING WB1 ATC100B0R5BT500XT ATC100B470JT500XT MRF9060LR1 MRF9060S T491D106K035AT PDF

    Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original
    MRF9060M/D MRF9060MR1 MRF9060MBR1 PDF

    MRF9060MR1

    Abstract: 93F2975
    Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060MR1 MRF9060MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original
    MRF9060MR1 MRF9060MBR1 93F2975 PDF