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Rochester Electronics LLC MRF9060MR1 RF MOSFET 26V TO270-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MRF9060MR1	Bulk			10	1 - 10 $33.24 100 $33.24 1000 $33.24 10000 $33.24	Buy Now
Freescale Semiconductor MRF9060MR1 RF Ultra High Frequency Band, N-Channel Power MOSFET, TO-270AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	MRF9060MR1		860		1	1 $31.96 10 $31.96 100 $30.04 1000 $27.17 10000 $27.17	Buy Now

MRF9060M Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
MRF9060M	Freescale Semiconductor	MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs	Original	PDF
MRF9060MBR1	Freescale Semiconductor	945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET	Original	PDF
MRF9060MBR1	Freescale Semiconductor	60W TO272 DUAL LEAD	Original	PDF
MRF9060MBR1	Motorola	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs	Original	PDF
MRF9060MBR1	Motorola	RF Power Field Effect Transistor	Original	PDF
MRF9060MR1	Freescale Semiconductor	945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET	Original	PDF
MRF9060MR1	Freescale Semiconductor	RF PWR FET 60W TO-270	Original	PDF
MRF9060MR1	Motorola	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs	Original	PDF
MRF9060MR1	Motorola	RF Power Field Effect Transistor	Original	PDF

MRF9060M Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RF-35-0300 Abstract: A04T-5 93F2975 A113 MRF9060MBR1 MRF9060MR1 100B470JP 100B100JP 44F3360 Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9060M/D MRF9060MR1 MRF9060MBR1 RF-35-0300 A04T-5 93F2975 A113 MRF9060MBR1 100B470JP 100B100JP 44F3360
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9060M/D MRF9060MR1 MRF9060MBR1 DEVICEMRF9060M/D
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9060M Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9060NR1 MRF9060NBR1 MRF9060MR1 MRF9060MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	PDF	MRF9060M MRF9060NR1 MRF9060NBR1 MRF9060MR1 MRF9060MBR1
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies	Original	PDF	MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D
A113 Abstract: MRF9060MBR1 MRF9060MR1 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc. Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9060M/D MRF9060MR1 MRF9060MBR1 MRF9060MR1 A113 MRF9060MBR1
pd 223 Abstract: MARKING WB1 A113 MRF9060M MRF9060MBR1 MRF9060MR1 Text: Freescale Semiconductor Technical Data Document Number: MRF9060M Rev. 9, 5/2006 Replaced by MRF9060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRF9060M MRF9060NR1/NBR1. MRF9060MR1 MRF9060MBR1 pd 223 MARKING WB1 A113 MRF9060M MRF9060MBR1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9060M Rev. 9, 5/2006 Replaced by MRF9060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRF9060M MRF9060NR1/NBR1. MRF9060MR1 MRF9060MBR1 MRF9060MR1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9060M Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9060NR1 MRF9060NBR1 MRF9060MR1 MRF9060MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	PDF	MRF9060M MRF9060NR1 MRF9060NBR1 MRF9060MR1 MRF9060MBR1
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9060M/D MRF9060MR1 MRF9060MBR1
MRF9060MR1 Abstract: 93F2975 Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060MR1 MRF9060MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	PDF	MRF9060MR1 MRF9060MBR1 93F2975
A113 Abstract: MRF9060MBR1 MRF9060MR1 95F786 Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9060M/D MRF9060MR1 MRF9060MBR1 A113 MRF9060MBR1 95F786
945 mosfet n Abstract: 93F2975 c17 dual mos 9450 transistor 52169 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it	Original	PDF	MRF9060MBR1 945 mosfet n 93F2975 c17 dual mos 9450 transistor 52169
93F2975 Abstract: transistor WB1 Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies	Original	PDF	MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D 93F2975 transistor WB1
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies	Original	PDF	MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D

ATC100B100JT500XT Abstract: MRF9060NR1 945 TRANSISTOR FREESCALE PACKING MARKING WB1 A113 ATC100B3R9CT500XT ATC100B470JT500XT JESD22 MRF9060NBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 13, 6/2009 RF Power Field Effect Transistor MRF9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	PDF	MRF9060N MRF9060NR1 ATC100B100JT500XT MRF9060NR1 945 TRANSISTOR FREESCALE PACKING MARKING WB1 A113 ATC100B3R9CT500XT ATC100B470JT500XT JESD22 MRF9060NBR1
A113 Abstract: MRF9060NBR1 MRF9060NR1 Text: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060NR1 MRF9060NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	PDF	MRF9060N MRF9060NR1 MRF9060NBR1 MRF9060NR1 A113 MRF9060NBR1
TRANSISTOR REPLACEMENT GUIDE Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station	Original	PDF	SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	PDF	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Untitled Abstract: No abstract text available Text: Document Number: MRF9060N Rev. 13, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	PDF	MRF9060N MRF9060NR1
MRF9060MB Abstract: 93F2975 A04T-5 a113 bolt c17 dual mos 95F786 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9060MR1 MRF9060MBR1 MRF9060MB 93F2975 A04T-5 a113 bolt c17 dual mos 95F786
Untitled Abstract: No abstract text available Text: Section Two Motorola RF Transistors – Data Sheets Device Number Page Number Device Number Page Number MBC13900 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–3 MRF9085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–181	Original	PDF	MBC13900 MRF281SR1 MRF281ZR1 MRF282SR1 MRF282ZR1 MRF284 MRF284SR1 MRF21090S MRF21120 MRF21120S
MOTOROLA SCR 1725 Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901 Text: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1	Original	PDF	DL110/D MOTOROLA SCR 1725 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
HP RF TRANSISTOR GUIDE Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS	Original	PDF	SG384/D HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
EB202 Abstract: AR305 "Good RF Construction Practices and Techniques" transistors EB202 MOTOROLA circuit for mrf150 AN749 ford eec V ar164 TRANSISTOR C 6090 lg AN762 RF AMPLIFIER Text: SG46/D REV 21 Wireless RF, IF and Transmitter Selector Guide Wireless RF, IF and Transmitter Selector Guide While Motorola is a worldwide leader in semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF	Original	PDF	SG46/D EB202 AR305 "Good RF Construction Practices and Techniques" transistors EB202 MOTOROLA circuit for mrf150 AN749 ford eec V ar164 TRANSISTOR C 6090 lg AN762 RF AMPLIFIER

MRF9060M Search Results

MRF9060M Price and Stock

Rochester Electronics LLC MRF9060MR1

Freescale Semiconductor MRF9060MR1

MRF9060M Datasheets (9)

MRF9060M Datasheets Context Search

RF-35-0300

Untitled

Untitled

Untitled

A113

pd 223

Untitled

Untitled

Untitled

MRF9060MR1

A113

945 mosfet n

93F2975

Untitled

ATC100B100JT500XT

A113

TRANSISTOR REPLACEMENT GUIDE

2a258 transistor

Untitled

MRF9060MB

Untitled

MOTOROLA SCR 1725

HP RF TRANSISTOR GUIDE

EB202