MRFE6VS25L Search Results

MRFE6VS25L Price and Stock

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NXP Semiconductors MRFE6VS25LR5 RF MOSFET LDMOS 50V NI360
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MRFE6VS25LR5	Digi-Reel	3		1	1 $89.72 10 $74.906 100 $89.72 1000 $89.72 10000 $89.72	Buy Now
	MRFE6VS25LR5	Cut Tape	3		1	1 $89.72 10 $74.906 100 $89.72 1000 $89.72 10000 $89.72	Buy Now
	MRFE6VS25LR5	Reel			50	1 - 10 - 100 $67.1431 1000 $68.978 10000 $68.978	Buy Now
Avnet Americas	MRFE6VS25LR5	Reel		10 Weeks	100	1 - 10 - 100 $63.90052 1000 $58.13506 10000 $58.13506	Buy Now
Mouser Electronics	MRFE6VS25LR5					1 $83.01 10 $72.38 100 $64.45 1000 $64.45 10000 $64.45	Get Quote
Newark	MRFE6VS25LR5	Bulk			50	1 - 10 - 100 $62.94 1000 $62.94 10000 $62.94	Buy Now
Richardson RFPD	MRFE6VS25LR5		15		1	1 $73.14 10 $70.01 100 $66.05 1000 $66.05 10000 $66.05	Buy Now

Avnet Silica	MRFE6VS25LR5			54 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	MRFE6VS25LR5			54 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

MRFE6VS25L Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MRFE6VS25LR5		Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET VHV6E 25W 50V NI360L		Original	PDF

MRFE6VS25L Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	PDF	MRFE6VS25L MRFE6VS25LR5
D260-4118-0000 Abstract: 0119A 0190A Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	PDF	MRFE6VS25L MRFE6VS25LR5 D260-4118-0000 0119A 0190A
D260-4118-0000 Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1 Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	PDF	MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac
MMZ20363B Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless	Original	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1304L Rev. 0, 12/2013 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MMRF1304LR5 RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as	Original	PDF	MMRF1304L MMRF1304LR5