MRFG35003M6 Search Results

581 transistor motorola

Abstract: Motorola 581 MOTOROLA TRANSISTOR 935 A113 MRFG35003M6T1 0675 z7 0951
Contextual Info: MOTOROLA Order this document by MRFG35003M6T1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35003M6T1 RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in

0841

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003M6T1 Rev. 3, 6/2005 Gallium Arsenide PHEMT MRFG35003N6T1 MRFG35003M6T1 RF Power Field Effect Transistors Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Devices are unmatched and are characterized for use

A113

Abstract: MRFG35003M6T1 MRFG35003N6T1 MRFG35003M6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003M6T1 Rev. 4, 1/2006 Replaced by MRFG35003N6T1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

TRANSISTOR 0835

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA This document contains information on a new product. Specifications and information herein are subject to change without notice. MRFG35003M6T1 Advance Information The RF GaAs Line Gallium Arsenide PHEMT 3.5 GHz, 3 W, 6 V

marking 0836

Abstract: 0841
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003M6T1 Rev. 3, 6/2005 Gallium Arsenide PHEMT MRFG35003N6T1 MRFG35003M6T1 RF Power Field Effect Transistors Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Devices are unmatched and are characterized for use

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003M6T1 Rev. 4, 1/2006 Replaced by MRFG35003N6T1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

Contextual Info: Freescale Semiconductor Technical Data MRFG35003M6T1 Rev. 2, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003M6T1 Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in

TRANSISTOR 0835

Contextual Info: MOTOROLA Order this document by MRFG35003M6T1/D SEMICONDUCTOR TECHNICAL DATA This document contains information on a new product. Specifications and information herein are subject to change without notice. MRFG35003M6T1 Advance Information The RF GaAs Line

A113

Abstract: MRFG35003M6T1
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRFG35003M6T1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35003M6T1 RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in

MRFG35003N6T1

Abstract: A113
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 5, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6T1 Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 6, 1/2008 MRFG35003N6T1 replaced by MRFG35003N6AT1. MRFG35003N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts,

TRANSISTOR REPLACEMENT GUIDE

Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
Contextual Info: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station

Mrf648

Abstract: MRF185 MRF373 MRF650 MG4100 MC3PHAC MRF648 applications mpx6115 MPX53 TPV8100B
Contextual Info: Freescale Semiconductor Product Selector Guide Cross-Reference Quarter 4, 2004 SG1000CRQ42004 Rev 0 Introduction The Freescale Semiconductor Product Selector Guide Cross-Reference provides a listing of all products documented in the fifteen Freescale Semiconductor Product

M 9587

Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210
Contextual Info: RF AND IF QUARTER 1, 2004 SG1009/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Market Product TV Broadcast MRF377 800 MHz 2.2 GHz Cellular Base Station MW4IC001MR4 900 MHz Cellular Base Station MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station

Motorola transistors MRF646

Abstract: 100 watt hf transistor 12 volt Motorola transistors MRF648 vhf linear pulse power amplifier "Good RF Construction Practices and Techniques" 32 pins qfn 5x5 footprint transistor BR 471 A 4 bit dac MOTOROLA SELECTION mrf150 linear amplifier 470-860
Contextual Info: Selector Guide WIRELESS RF PRODUCT SELECTOR GUIDE SG46/D Rev. 25 9/2003 wireless Wireless RF Product Selector Guide Offering a broad portfolio of RF products, Motorola serves both the wireless infrastructure and subscriber markets. Motorola RF Solutions is the leader in RF technology—today

MRFG35003N6AT1

Abstract: A113 MRFG35003N6T1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 6, 1/2008 MRFG35003N6T1 replaced by MRFG35003N6AT1. MRFG35003N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts,

smd diode J476

Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
Contextual Info: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

MRFG35003N6AT1

Abstract: A113 MRFG35003N6T1 motorola marking pld-1.5 package TRANSISTOR J 5803
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 6, 1/2008 MRFG35003N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in

MRF9130

Abstract: MRF9030L MRF9060 MRF9135LSR3
Contextual Info: Chapter Five Motorola RF Transistors – Data Sheets Device Number Page Number Device Number Page Number MBC13900 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5–3 MRF9080LSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

MRF1550

Abstract: MMH3101 ar164 uhf amplifier design MRF454 motorola MOTOROLA SELECTION mrf150 MRF247 bts 425 l1 mrf5015 MRF9135
Contextual Info: Freescale Semiconductor Selector Guide. Wireless RF Product. SG46/D Rev. 27 10/2004 Wireless RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor serves both the wireless infrastructure and subscriber markets. Freescale RF Solutions is the leader in RF technology—today AND tomorrow—and is the answer for developers