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Microchip Technology Inc MS1649 RF TRANS NPN 16V 470MHZ TO39
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MS1649 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MS1649		Advanced Power Technology	RF & MICROWAVE TRANSISTOR UHF CLASS C MOBILE APPLICATIONS		Original	PDF
MS1649		Advanced Power Technology	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS		Original	PDF
MS1649		Advanced Semiconductor	Transistor		Original	PDF
MS1649		Microsemi	Bipolar/LDMOS Transistor		Original	PDF

MS1649 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MS1649 Abstract: No abstract text available Text: MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS Features • • • • 470 MHz POUT = 3W GP = 9.5dB MINIMUM COMMON EMITTER CONFIGURATION 1. Collector 2. Base 3. Emitter DESCRIPTION: TO-39 The MS1649 is a 12.5V epitaxial NPN planar transistor	Original	PDF	MS1649 MS1649 470MHz
7107 ic Abstract: 7107 7107 datasheet 7107 GP IC 7107 MS1649 Text: MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS Features • • • • 470 MHz POUT = 3W GP = 9.5dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter 2. Base 3. Collector DESCRIPTION: TO-39 The MS1649 is a 12.5V epitaxial NPN planar transistor	Original	PDF	MS1649 MS1649 100mA 470MHz 7107 ic 7107 7107 datasheet 7107 GP IC 7107
MS1649 Abstract: 205AD Text: MS1649 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MS1649 is Designed for UHF large signal, FM Land Mobile Applications. PACKAGE STYLE TO 205AD FEATURES: MILLIMETERS • Grounded Emitter • PG = 9.5 dB at 3.0 W/470 MHz • Omnigold Metalization System	Original	PDF	MS1649 MS1649 205AD 205AD
MS1649 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS Features • • • • 470 MHz POUT = 3W GP = 9.5dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter	Original	PDF	MS1649 MS1649 100mA 470MHz
Untitled Abstract: No abstract text available Text: MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS Features • • • • 470 MHz POUT = 3W GP = 9.5dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter 2. Base 3. Collector DESCRIPTION: TO-39 The MS1649 is a 12.5V epitaxial NPN planar transistor	Original	PDF	MS1649 MS1649
Untitled Abstract: No abstract text available Text: MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS Features • • • • 470 MHz POUT = 3W GP = 9.5dB MINIMUM COMMON EMITTER CONFIGURATION 1. Collector 2. Base 3. Emitter DESCRIPTION: TO-39 The MS1649 is a 12.5V epitaxial NPN planar transistor	Original	PDF	MS1649 MS1649 470MHz
mce544 Abstract: bfr96 equivalent MC3042 Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630 Text: MC3042 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC3042 is a high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! 1Watt Output Power @ 400MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com	Original	PDF	MC3042 400MHz SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA mce544 bfr96 equivalent Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630
PNP 2GHz LNA Abstract: mce544 bfr96 equivalent TRANSISTOR NPN 5GHz TRANSISTOR PNP 5GHz MC1333 ms1649 MCE545 transistor 5ghz pnp MRF630 Text: MC1333 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC1333 is a low noise, high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! Low noise-2.5dB@500MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com	Original	PDF	MC1333 500MHz SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA PNP 2GHz LNA mce544 bfr96 equivalent TRANSISTOR NPN 5GHz TRANSISTOR PNP 5GHz ms1649 MCE545 transistor 5ghz pnp MRF630
bfr96 equivalent Abstract: MCE544 bfr96 equivalent TRANSISTORS MC1343 transistor equivalent bfr96 2N5031 equivalent TRANSISTOR PNP 5GHz MRF630 MRF544 microsemi MRF237 Text: MCE545 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MCE545 is a high breakdown, high gain, discrete PNP silicon bipolar transistor, shipped in waffle pack. ! High Breakdown BVCEO = 70V ! Gold Back Metal	Original	PDF	MCE545 Symb333 SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA bfr96 equivalent MCE544 bfr96 equivalent TRANSISTORS MC1343 transistor equivalent bfr96 2N5031 equivalent TRANSISTOR PNP 5GHz MRF630 MRF544 microsemi MRF237
Untitled Abstract: No abstract text available Text: [AP4400A] AP4400A Ultra Low Power Voltage Detector 1. Genaral Description The AP4400A is ultra-low power consumption and high-precision IC for voltage detection. Its consumption current is extremely low and is only 20nA typically @3.3 V, detecting voltage . Since its consumption current	Original	PDF	AP4400A] AP4400A AP4400A MS1649-E-00
LE79Q2281 Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572 Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security	Original	PDF
Untitled Abstract: No abstract text available Text: [AP4400A] AP4400A Ultra Low Power Voltage Detector 1. Genaral Description The AP4400A is ultra-low power consumption and high-precision IC for voltage detection. Its consumption current is extremely low and is only 20nA typically @3.3 V, detecting voltage . Since its consumption current	Original	PDF	AP4400A] AP4400A AP4400A MS1649-E-01
Untitled Abstract: No abstract text available Text: [AP4400A] AP4400AEMXX Ultra Low Power Voltage Detector 1. 概要 AP4400A シリーズは超低消費電流を特長とした高精度CMOS電源電圧検出ICです。消費電流は20 nA typ（ @ 3.3V 検出電圧）と極めて低く抑えられています。出力はCMOS出力で従来のCMOS電源電圧検	Original	PDF	AP4400A] AP4400AEMXX AP4400A MS1649-XX-J-00
MG1007-42 Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30 Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are	Original	PDF	MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

bfr96 equivalent Abstract: MCE544 MC1343 TRANSISTOR PNP 5GHz transistor 5ghz pnp MC1333 Transistor MRF237 MRF544 microsemi MRF237 5GHz PNP transistor Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz	Original	PDF	MRF544 To-39 Emitter-BasF545 MRF544 MMBR5031LT1/2N5031 MRF581/MRF5812R1/BFR96 400mA 200mA 14dB/200MHz bfr96 equivalent MCE544 MC1343 TRANSISTOR PNP 5GHz transistor 5ghz pnp MC1333 Transistor MRF237 microsemi MRF237 5GHz PNP transistor