MS621 Search Results

Contextual Info: MS6211 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq10G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

Contextual Info: MOSEL- VITELIC MS621002 256K x 4 CMOS STATIC RAM Features Description • ■ ■ ■ ■ ■ ■ ■ The MS621002 is a high speed 1M-bit static RAM organized as 256K x_4. Fully static in operation, the Chip Enable E reduces power to the chip when HIGH. Standby power drops to its

Contextual Info: FEATURES DESCRIPTION • Fast Access Times: *20/25/35 ns The MS621002 is a high speed 1M-bit static RAM organ ized as 256K x 4. Fully static in operation, the Chip Enable E reduces power to the chip when HIGH. Standby power drops to its lowest level (lSB1) when E is

1J28K

Contextual Info: MOSEL- VITEUC MS621008 128K x 8 CMOS STATIC RAM Features • Fast Access Times: 20/25/35 ns ■ High Density 400-Mil SOJ Package ■ Low Standby Power ■ TTL Compatible I/O ■ 5V + 10% Supply ■ Fully Static Operation ■ Three State Output ■ JEDEC Standard Pinout

Contextual Info: MOSEL MS621002 PRELIMINARY 256K x 4 CMOS Static RAM DESCRIPTION FEATURES The MS621002 is a high speed 1M-bit static RAM organizedas 256K x 4. Fully static in operation, the Chip Enable E reduces power to the chip when HIGH. Standby power drops to its lowest level (lSB1) when E is

Contextual Info: Micro Battery Product Catalogue 2014 2015 EW N High Operating Temperature MS920T / MS621T Under development Designed with SII’s unique sealing technology, “MS920T” offers a wider operating temperature range than conventional models, while maintaining the features of current MS-series.

Contextual Info: bSE » MOSEL-VITELIC MOSEL- VITELIC • bBSBBTl OQGS443 14b « U O V I M S621002 256K x 4 CMOS STATIC RAM Features Description ■ ■ ■ ■ ■ ■ ■ ■ The MS621002 is a high speed 1M-bit static RAM organized as 256K x_4. Fully static in operation, the Chip Enable E reduces power to

Contextual Info: MOSEL MS621000 1048576 131,072 x 8 CMOS Static RAM with Data Retention and Low Power ADVANCE INFORMATION FEATURES DESCRIPTION • Available in 80/100/120 ns (Max.) The MOSEL MS621000 is a high performance, low power CMOS static RAM organized as 131,072 words by 8 bits.

Contextual Info: M O SEL VTTELiC MS621007A 128K x 8 CMOS STATIC RAM Features Description • ■ ■ ■ ■ ■ ■ ■ The MS621007A is a high speed 1,048,576-bit static RAM organized as 128K x 8. A fast, efficient design is obtained with a CMOS periphery and a matrix constructed with polysilicon load memory cells.

K321

Abstract: MS621008-20EC MS621008-20KC MS621008-25EC MS621008-35EC
Contextual Info: MOSEL MS621008 P R E L IM IN A R Y 128K x 8 CMOS Static RAM FEATURES DESCRIPTION F a st A c c e s s T im e s : *2 0 /2 5 /3 5 ns T h e M S 6 2 1 0 0 8 is a high s p e e d 1 M -b it s ta tic R AM o rg a n iz e d a s 12 8 K x 8. F u lly s ta tic in o p e ra tio n , th e C hip

Contextual Info: MOSEL MS621000 A D V A N C E IN F O R M A T IO N 1048576 131,072 x 8 CMOS Static RAM with Data Retention and Low Power FEATURES DESCRIPTION • Available in 8 0 /1 0 0 /1 2 0 ns (M ax.) T h e M O S E L M S 6 2 1 0 0 0 is a high perform ance, low power C M O S static R A M organized as 1 3 1 ,0 7 2 words by 8 bits.

Contextual Info: MOSEL MS621008 PRELIMINARY 128K x 8 CMOS Static RAM DESCRIPTION FEATURES The M S621008 is a high speed 1M-bit static RAM o rganizedas 120K x 8. Fully static in operation, the Chip Enable E control places the RAM in a low-pow er standby mode when inactive (HIGH). Standby power

Contextual Info: 09 マイクロ電池 製品カタログ 2014 2015 M Y K W E N 高温対応リチウム二次電池 MS920T / MS621T（開発中） 『MS920T / MS621T（開発中）』は従来の MS 系リチウム二次電池の特徴を活かしたまま、独自の

MS621000-10FC

Abstract: MS621000-80FC MS621000-80PC MS621000L-80PC P322
Contextual Info: MOSEL MS621000 1048576 131,072 x 8 CMOS Static RAM with Data Retention and Low Power ADVANCE INFORMATION FEATURES DESCRIPTION • Available in 80/100/120 ns (Max.) The MOSEL MS621000 is a high performance, low power CMOS static RAM organized as 131,072 words by 8 bits.

MS621002-20EC

Abstract: MS621002-20KC MS621002-25EC MS621002-25KC MS621002-35EC e281
Contextual Info: M OSEL MS621002 P R E L IM IN A R Y 256K x 4 CMOS Static RAM FEATURES DESCRIPTION Fast Access Times: *20/25/35 ns The MS621002 is a high speed 1M-bit static RAM organizedas 256K x 4. Fully static in operation, the Chip Enable E reduces power to the chip when HIGH.

MS621FE

Abstract: MS920SE MS614SE MS412FE MS614E MS518SE FL35E SEIKO MS621fe ms920 IL38E IL36E
Contextual Info: MS Lithium Rechargeable Battery 3V Type MS412FE/MS518SE/MS614E/MS614SE/MS621FE/MS920SE FEATURES MS Manganese Silicon lithium rechargeable batteries, developed by Seiko Instruments Inc., use silicon oxide as the anode and a lithium manganese composite oxide

Contextual Info: M O S E L V tT E L iC MS621002A 256K x 4 CMOS STATIC RAM Features Description • ■ ■ ■ ■ ■ ■ ■ The MS621002A is a high speed 1M-bit static RAM organized as 256K x_4. Fully static in operation, the Chip Enable E reduces power to the chip when HIGH. Standby power drops to its

Contextual Info: M O S E L V IT E U C M S621002A 2 5 6 K x 4 CM O S S T A TIC R A M Features Description • ■ ■ ■ ■ ■ ■ ■ The MS621002A is a high speed 1M-bit static RAM organized as 256K x_4. Fully static in operation, the Chip Enable E reduces power to the chip when HIGH. Standby power drops to its

MS62-1

Abstract: MS621007A
Contextual Info: M O S EL V tT E U C MS621007A 128K x 8 CMOS STATIC RAM Features Description • ■ ■ ■ ■ ■ ■ ■ The MS621007A is a high speed 1,048,576-bit static RAM organized as 128K x 8. A fast, efficient design is obtained with a CMOS periphery and a matrix

Contextual Info: MOSEL MS621000 1048576 131,072 x 8 CMOS Static RAM with Data Retention and Low Power ADVANCE INFORMATION FEATURES DESCRIPTION • Available in 80/100/120 ns (Max.) The MOSEL MS621000 is a high performance, low power CMOS static RAM organized as 131,072 words by 8 bits.

CPH3225A

Abstract: SR621 SR927W SR416 MS621FE TS518FE MS412FE MS920SE CP3225A SR421
Contextual Info: Micro Battery Product Catalogue 2010 2011 Chip type Electric Double Layer Capacitor CPH3225A / CP3225A CPH3225A/CP3225A is thinnest and smallest chip-type electric double layer capacitor. The unique ceramic packaging with superior air-tightness is used. As the result, it offers

MS6511

Abstract: MS5151 Microwave detector diodes 18 GHz Microwave detector diodes MS5121 MS5531 MS5221 MS5211 MS5321 MS6111
Contextual Info: 65 SCHOTTKY DIODES PART NUMBER 4 z |F fi NF (db) TEST F R EQ UENC Y VSWR MICROWAVE M IXER DIODES MS5111 MS5121 MS5131 8.0 7.5 7.0 150 300 150-300 150-300 2.3:1 2.3:1 2.0:1 MS5141 MS5151 MS5211 6.5 6.0 8.0 150-300 150-300 150 300 1.8:1 1.5:1 2.3:1 MS5221

sram book

Contextual Info: BYTEWIDE STATIC RAMS MOSEL has developed a broad line of slow and fast bytewide static RAMs from 16K bits to 4 megabits, including monolithic products at 16K, 64K, 256K and 1 megabit sampling and module products at 1 megabit and 4 megabits. SRAM products are offered in JEDEC

MS7204

Contextual Info: PRODUCT SELECTION GUIDE Density Static RAMs Part Number Speed s Icc Max. mA Iccsb Max. mA Package* 2K x 8 MS6516 90, 100, 120 ns 70 2 P.S 8K x 8 100 15 N, P, S MS6264A 45, 55 ns 8K x 8 MS6264C 80, 100, 150 ns 60 2 F, N, P 8K x 8 MS6264 70, 100 ns 85 3 F, P