MSAGA11F120D Search Results

MSAGA11F120D Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
MSAGA11F120D		Microsemi	Fast IGBT		Original	PDF	226.27KB	3
MSAGA11F120DL		Microsemi	Fast IGBT		Original	PDF	226.27KB	3

MSAGA11F120D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2830 S. Fairview Street Santa Ana, CA 92704 Phone: 714 979-8220 Fax: (714) 559-5989 MSAGA11F120D Fast IGBT Die for Implantable Cardio Defibrillator Applications FEATURES: • • • • • • Low Forward Voltage Drop, Low Tail Current Avalanche and Surge Rated	Original	MSAGA11F120D 20KHz MSAGA11F120DL, MSC0947	PDF
Mastech Abstract: MSAGA11F120D IGBT 100V 100A Contextual Info: SURGE EVALUATION OF IGBT DIE TYPE MSAGA11F120D PURPOSE: TO DETERMINE DEVICE SURVIVABILITY TO HIGH CURRENT PULSE TESTING SURGE AS DESCRIBED BELOW DATE: 2/4/99 1) Given the reduced timewidth of the current pulse (see #2 below) it was postulated that the package will	Original	MSAGA11F120D MSAGA11F120D 400Apk, 00A/div 00V/div Mastech IGBT 100V 100A	PDF
Contextual Info: • m a Santa Ana, CA m Micmsemi Progress Powered by Technology 2830 S. Fairview Street Santa Ana, CA 92704 Phone: 714 979-8220 Fax: (714)559-5989 MSAGA11F120D Fast IGBT Die for Implantable Cardio Defibrillator Applications DEECRPTICN: N-Channel enhancement mode high density IGBT die	OCR Scan	MSAGA11F120D 20KHz MSAGA11F120Dtter MSC0947	PDF
MSAGA11F120D Abstract: MSAGA11F120DL 47MJ Contextual Info: 2830 S. Fairview Street Santa Ana, CA 92704 Phone: 714 979-8220 Fax: (714) 559-5989 MSAGA11F120D DESCRIPTION: • N-Channel enhancement mode high density IGBT die • Passivation: Nitrid/Foroimid • Emitter Metallization: Al Si for aluminum wire bonding; Collector	Original	MSAGA11F120D 20KHz MSAGA11F120DL, MSC0947 MSAGA11F120D MSAGA11F120DL 47MJ	PDF
c 3421 transistor Abstract: 010-0041 IC350 power IGBT HTGB MSAGA11F120D Contextual Info: MSAGA11F120D WAFER LOT EVALUATION INTERNAL PROCESS SPECIFICATION IPS REV. 0, Approval _N/C_ QC LOT#:_ LOT DATE CODE:_ QUANTITY ISSUED:_ QUANTITY REQUIRED:_ SUMMARY MICROSEMI MSAGA11F120D data sheet REVISION:	Original	MSAGA11F120D MSAGA11F120D discretes\msae\MSAFX10N100AS c 3421 transistor 010-0041 IC350 power IGBT HTGB	PDF
MED427-A1 Abstract: MED427A-1 LX1801 igbt 0201 a LX1802 MSAGA11F120D VDD800 MD427 IGBT microsemi HALF CONTROLLER BRIDGE notes Contextual Info: MED427-A1 INTEGRATED PRODUCTS MicroPower High Voltage Half Bridge DATASHEET KEY FEATURES Miniature size, Multi Chip Module, MCM Significant Reduction Component to existing ½ Bridge Design Convenient mounting, Ball Grid Array, BGA Sn63/Pb37 solder bumps 250nA quiescent current	Original	MED427-A1 Sn63/Pb37 250nA MED427-A1 MED427A-1 LX1801 igbt 0201 a LX1802 MSAGA11F120D VDD800 MD427 IGBT microsemi HALF CONTROLLER BRIDGE notes	PDF
Contextual Info: MED427 High Voltage Half Bridge CARLSBAD DIVISION TARGET DATASHEET KEY FEATURES ! ! ! ! ! ! ! IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Miniature size, Multi Chip Module, MCM Significant Reduction Component to existing ½	Original	MED427 MED427 LX1801 LX1802	PDF
MED427A-1 Contextual Info: MED427-A1 High Voltage Half Bridge CARLSBAD DIVISION DATASHEET KEY FEATURES Miniature size, Multi Chip Module, MCM Significant Reduction Component to existing ½ Bridge Design Convenient mounting, Ball Grid Array, BGA Sn63/Pb37 solder bumps 250nA quiescent current	Original	MED427-A1 MED427-A1 LX1801 LX1802 MED427A-1	PDF
defibrillator Abstract: MSAGA11F120D MSAGA11F120DL Contextual Info: N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical. • Collector/Gate Metallization: Ti – Ni 1 um – Ag (0.2 um) for soft solder attach	Original	20KHz MSAGA11F120DL, MSAGA11F120D MSC0947 defibrillator MSAGA11F120D MSAGA11F120DL	PDF