BUK98150-55A
Abstract: ID16 SC-73
Text: BUK98150-55A TrenchMOS logic level FET Rev. 01 — 03 October 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK98150-55A
M3D087
BUK98150-55A
OT223
SC-73)
ID16
SC-73
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PHT4NQ10T
Abstract: SC-73 09581
Text: PHT4NQ10T TrenchMOS standard level FET M3D087 Rev. 02 — 2 May 2002 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT4NQ10T in SOT223. 2. Features
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PHT4NQ10T
M3D087
PHT4NQ10T
OT223.
OT223,
MSB002
OT223
SC-73
09581
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buk987
Abstract: BUK9875-100A SC-73
Text: BUK9875-100A TrenchMOS logic level FET Rev. 01 — 30 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK9875-100A
BUK9875-100A
OT223
SC-73)
buk987
SC-73
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BFG198
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a
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BFG198
OT223
MSB002
OT223.
CGY2020G
SCA50
647021/1200/01/pp12
BFG198
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended
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BFG198
OT223
MSB002
OT223.
R77/03/pp14
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG31 PNP 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 12 NXP Semiconductors Product specification PNP 5 GHz wideband transistor FEATURES BFG31 PINNING • High output voltage capability
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BFG31
OT223
MSB002
OT223.
BFG97.
R77/02/pp9
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BAT160C
Abstract: BAT160S AT160C BAT160 BAT160A
Text: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT160 series Schottky barrier double diodes Product specification Supersedes data of 1999 Mar 26 1999 Sep 20 Philips Semiconductors Product specification Schottky barrier double diodes FEATURES BAT160 series
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M3D087
BAT160
BAT160
MGL171
BAT160A
115002/03/pp8
BAT160C
BAT160S
AT160C
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BFG135 amplifier
Abstract: BFG135 BFG135 - BFG135 MBB300
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor
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BFG135
OT223
CGY2020G
SCA50
647021/1200/01/pp12
BFG135 amplifier
BFG135
BFG135 - BFG135
MBB300
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MBK573
Abstract: AT120A BAT120 BAT120A BAT120C BAT120S
Text: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT120 series Schottky barrier double diodes Product specification File under Discrete Semiconductors, SC01 1998 Jan 21 Philips Semiconductors Product specification Schottky barrier double diodes BAT120 series
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M3D087
BAT120
BAT120
MGL171
BAT120A
SCA57
117027/1200/01/pp8
MBK573
AT120A
BAT120C
BAT120S
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c 129 transistor
Abstract: BLU86 SMD ic catalogue
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU86 UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile
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BLU86
OT223
c 129 transistor
BLU86
SMD ic catalogue
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BFG35
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
MSB002
OT223.
125006/03/pp16
BFG35
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TRANSISTOR GENERAL DIGITAL L6
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
BFG35
MSB002
OT223.
R77/03/pp14
771-BFG35-T/R
TRANSISTOR GENERAL DIGITAL L6
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BFG591,115
Abstract: BFG591 Application Notes
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 04 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION • High power gain
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BFG591
BFG591
OT223
MSB002
OT223.
R77/02/pp14
771-BFG591-T/R
BFG591,115
BFG591 Application Notes
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SC05
Abstract: BFQ166
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ166 NPN video transistor Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC05 1997 Oct 02 Philips Semiconductors Product specification NPN video transistor BFQ166 FEATURES DESCRIPTION
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BFQ166
OT223
SCA55
127027/00/02/pp8
SC05
BFQ166
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PHT4NQ10LT
Abstract: SC-73
Text: PHT4NQ10LT N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:
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PHT4NQ10LT
M3D087
PHT4NQ10LT
OT223.
OT223,
SC-73
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
MSB002
OT223.
R77/03/pp14
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG94 NPN 6 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFG94 PINNING • High power gain PIN Low noise figure 1 emitter Low intermodulation distortion
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BFG94
OT223
MSB002
OT223.
R77/02/pp15
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07342
Abstract: No abstract text available
Text: PHT4NQ10LT N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:
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PHT4NQ10LT
M3D087
PHT4NQ10LT
OT223.
OT223,
07342
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transistor smd yw
Abstract: AT120A BAT120 BAT120A BAT120C BAT120S
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D087 BAT120 series Schottky barrier double diodes Product data sheet Supersedes data of 2001 Aug 27 2003 Aug 04 NXP Semiconductors Product data sheet Schottky barrier double diodes BAT120 series FEATURES PINNING
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M3D087
BAT120
BAT120
613514/04/pp7
transistor smd yw
AT120A
BAT120A
BAT120C
BAT120S
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BLT50
Abstract: philips Trimmers 2222 series MEA218 MEA223 RF Transistor smd transistor zl
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification File under Discrete Semiconductors, SC08b April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures
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BLT50
SC08b
OT223
BLT50
philips Trimmers 2222 series
MEA218
MEA223
RF Transistor
smd transistor zl
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ha 431 transistor
Abstract: BSP122 UBB073 transistor 431 N
Text: ^53^31 Philips Semiconductors Q023ñ30 APX bflñ Product specification N-channel enhancement mode vertical D-MOS transistor BSP122 N ANER PHILIPS/DISCRETE b7E D FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching
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BSP122
OT223
0to10
ha 431 transistor
BSP122
UBB073
transistor 431 N
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BFG97
Abstract: BFG31 MBB350
Text: Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 PIN N IN G FEA TUR ES • High output voltage capability PIN D E S C R IP TIO N • High gain bandwidth product 1 • Good thermal stability 2 base • Gold metallization ensures
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BFG31
OT223
BFG97.
OT223.
MSB002-
MBB350
MBB351
711002b
MSA035
BFG97
BFG31
MBB350
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BDS77
Abstract: BDS201 BDS203 IEC134 USM35
Text: Philips Components Datasheet status Product specification date of issu* April 1991 BDS201/203/77 NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 NPN Silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general
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BDS201/203/77
OT223)
BDS202/204/78.
OT223
BDS201
BDS203
BDS77
IEC134
USM35
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philips bfq
Abstract: FQ236A 236A
Text: Philips Semiconductors Product specification NPN video transistors BFQ236; BFQ236A FEATURES DESCRIPTION • High breakdow n voltages NPN vid e o tra n sisto r in a SO T223 plastic package. PNP com plem ents: BFQ 256 and BFQ 256A. • Low output capacitance
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BFQ236;
BFQ236A
MSB002
OT223
philips bfq
FQ236A
236A
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