MSC16 Search Results

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MSC1600M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 1090 MHz 25:1 VSWR CAPABILITY POUT = 600 WATTS GP = 6.0 dB MINIMUM GOLD METALIZATION

MSC1621T1

Abstract: MSC1621
Contextual Info: MSC1621T1* CASE 318D-03, STYLE 1 nh % COLLECTOR MAXIMUM RATINGS Î A = 25 C Rating Symbol Value Unit Collector-Base Voltage v CBO 40 V Collector-Emitter Voltage v CEO 20 V Emitter-Base Voltage Collector Current-Continuous v EBO 5 V *C 200 mA □ 2 BASE

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MSC1600M RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS Features • • • • • • • 1090 MHz 25:1 VSWR CAPABILITY POUT = 600 WATTS GP = 6.0 dB MINIMUM

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MSC1600M RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS Features • • • • • • • 1090 MHz 25:1 VSWR CAPABILITY POUT = 600 WATTS GP = 6.0 dB MINIMUM

MSC16

Contextual Info: Revised January 1999 Package MSC16 16-Lead Shrink Small Outline Package SSOP , EIAJ TYPE I, 4.4mm Wide Package Number MSC16 1999 Fairchild Semiconductor Corporation msc16.prf www.fairchildsemi.com Package MSC16 January 1999

MSC1600M

Abstract: j16 transistor
Contextual Info: MSC1600M RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS Features • • • • • • • 1090 MHz 25:1 VSWR CAPABILITY POUT = 600 WATTS GP = 6.0 dB MINIMUM GOLD METALIZATION INPUT MATCHING COMMON BASE CONFIGURATION DESCRIPTION: The MSC1600M is a high power pulsed transistor specifically

crowbar

Abstract: ma 2830 I3124 TCP009 TCP009A TCP009E
Contextual Info: TCP009A SANTA ANA DIVISION DUAL ASYMETRICAL TRANSIENT SUPPRESSOR FOR XDSL AND DATA LINES PRODUCT PREVIEW This Thyristor Surge Suppressor device has been especially designed to protect against overvoltage. Two diodes clamp positive overloads while negative surges are suppressed by two protection thyristors.

MSC1626

Abstract: sd1012 SD1012-03 max3618
Contextual Info: SD1012-03 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The SD1012-03 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications in the 36 – 175 MHz frequency range. Emitter ballasting is employed to achieve

2sd1070

Contextual Info: SD1070 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES ! ! ! ! ! ! 130 - 400 MHz 28 Volts High Power Gain High Efficiency Common Emitter POUT = 13.5 W Min. @ 175 MHz IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

SD1429

Abstract: M111 2SD1429
Contextual Info: SD1429 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES ! ! ! ! ! 470 MHz 12.5 Volts Common Emitter POUT = 12 W Min. GP = 7.8 dB Gain IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

NPN microwave power transistor 865

Contextual Info: SD1144 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The SD1144 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated

LG 631 TV LG power supply

Abstract: lg crt tv motherboard circuit diagram Cirrus CL-GD5428 ihp 1c manual cl-gd5420 lg flat crt tv electronic diagram D5426 LG 631 TV LG lg flat screen crt tv electronic diagram 5420 bios
Contextual Info: CL-GD542X Preliminary Data Book 'CIRRUS LOGIC True Color VGA Family CL-GD5429 - Memory-Mapped I/O VGA GUI FEATURES • 32-bit GUI acceleration CL-GD5426/’28/’29 Accelerator with Local Bus — BitBLT (Bit block transfer) engine — Color expansion for 8- or 16-bit pixels

MSC1652

Abstract: SD1474
Contextual Info: SD1474 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES W W W . Microsemi .COM The SD1474 is a Class C 28 V common emitter device optimized for pulsed applications in the 400-500MHz frequency range. Refractory gold metallization and emitter ballasting ensure long-term

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

data sheet 74HC138

Abstract: vhc138 74HC138 74VHC138 74VHC138M 74VHC138MTC 74VHC138N 74VHC138SJ M16A M16D
Contextual Info: 74VHC138 3-to-8 Decoder Demultiplexer General Description The VHC138 is an advanced high speed CMOS 3-to-8 DECODER fabricated with silicon gate CMOS technology It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power

74hc161 application notes

Abstract: VHC161 74HC161 74VHC161 74VHC161M 74VHC161MSC 74VHC161MTC 74VHC161N 74VHC161SJ M16A
Contextual Info: 74VHC161 Synchronous Presettable Binary Counter General Description The VHC161 is an advanced high-speed CMOS device fabricated with silicon gate CMOS technology It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation The

sms05

Abstract: SMS03 SMS12 SMS15 SMS24
Contextual Info: SMS03 thru SMS24 4 LINE UNIDIRECTIONAL TVSarray SCOTTSDALE DIVISION PRODUCT PREVIEW W W W . Microsemi . COM T V S array™ S E R I E S DESCRIPTION This 6 pin 4 line unidirectional array is designed for use in applications where protection is required at the board level from voltage transients caused by

SD1014-02

Contextual Info: SD1014-02 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com 175 MHz !" 12.5 Volts !" Common Emitter !" !"POUT = 15 W Min.

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

MS2442

Contextual Info: Avionics Applications Avionics, IFF Applications 1030 /1090 MHz Vcc 0jC PULSE DUTY PKG WIDTH USEC STYLE (V) Max (°C/W) CYCLE (%) 11.5 35 50 8 10 1 M105 10 9.7 40 40 0.6 10 1 M210 150 20 8.7 35 43 0.3 10 1 M212 1090 300 70 6.3 40 50 0.2 10 1 M218 MSC1350M

MSC2404C

Abstract: MSC1621T1 RB
Contextual Info: SC-59 Devices_ Maximum die size 25 mil x 25 mil CASE 318D-03 General-Purpose Transistors Pinout: 1-Emitter, 2-Base, 3-Collector Devices are listed in order of descending breakdown voltage. hpE Device @ lc fT Marking V BR CEO Min Max mA