MSM41256A Search Results

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Abstract: MSM41256A MSM41256A-10 MSM41256A-12 MSM41256A-15
Contextual Info: S8E D O K I • L 7 2 4 2 4 D 0012bfib 7 41 H O K I J S E M I C O N D U C T O R GROUP O K I semiconductor MSM41256A_ 262,144-WORD x 1-BIT DYNAMIC RAM <PAGE MODE TYPE> _ GENERAL DESCRIPTION The Oki MSM41256A is a fully decoded, dynamic NMOS random access memory organized as

M41256A

Contextual Info: O K I semiconductor MSM41256A_ 262,144-WORD x 1-BIT DYNAMIC RAM <PAGE MODE TYPE> GENERAL DESCRIPTION The Oki MSM41256A is a fully decoded, dynamic NMOS random access memory organized as 262,144-word x 1 bit. The design is optimized for high-speed, high-performance applications

YS18A

Abstract: MSC2305-10YS18A MSC2305
Contextual Info: OKI semiconductor MSC2305YS18A_ 524,288 BY 9 BIT DYNAMIC RAM MODULE < Page Mode Type > GENERAL DESCRIPTION The Oki MSC2305YS18A is a fully decoded, 524,288 words x 9 bit NMOS dynamic random access memory composed of eighteen 256K DRAMs in plastic leaded chip carrier MSM41256AJS .

M41256A

Abstract: 41256A
Contextual Info: O K I sem iconductor MSM 41256 A_ 262,144-WORD x 1-BIT DYNAMIC RAM <PAGE MODE TYPE> GENERAL DESCRIPTION The Oki MSM41256A is a fully decoded, dynamic NMOS random access memory organized as 262,144-word x 1 bit. The design is optimized for high-speed, high-performance applications

4bm0

Abstract: TRANSISTOR BC 129 IMSM41256A MSM41256A MSM41256A-10 MSM41256A-12 MSM41256A-15 bc 303 transistor msm41256 sm-412
Contextual Info: SfiE D O K I • L7E 42 4 0 DOlEbfib 7 41, H O K I J S E M I C O N D U C T O R GROUP O K I semiconductor -<sM8 M41256A_ 262,144-WORD x 1-BIT DYNAMIC RAM <PAGE MODE TYPE> GENERAL DESCRIPTION The Oki MSM41256A is a fully decoded, dynamic NMOS random access memory organized as

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Contextual Info: O K I semiconductor MSC2329-xxYS3KS3_ 262,144 Word BY 9 Bit DYNAMIC RAM MODULE : PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2329-xxYS3/KS3 is a fully decoded, 262,144 word x 9 bit dynamic random access memory composed of two 1 Mb DRAMs in SOJ MSM514256AJS and one 256Kb DRAM in PLCC

256kb dynamic ram

Contextual Info: MbE D • b?2M2MD DD1 D2 5 3 — m lc oncluclor MSC2329-XXYS3KS3 O K I O K I 0^7 H O K I J 7~ V /-7? ~ /7 SEMI CONDUCTOR GROUP 262,144 Word BY 9 Bit DYNAMIC RAM MODULE : PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2329-xxYS3/KS3 is a fully decoded, 262,144 word x 9 bit dynamic random access

Contextual Info: O K I Semiconductor MSM6310 PCM RECORDING & PLAYBACK LSI GENERAL DESCRIPTION The MSM6310 is a PCM recording & playback LSI w hich is m anufactured using O ki's low pow er CM OS silicon gate technology. The M SM 6310 is designed for the p u rp o se of endless loop recording by 8-bit PCM.

Contextual Info: O K I semiconductor MSM41257A 262,144-WORD x 1-BIT DYNAMIC RAM NIBBLE MODE TYPE _ GENERAL DESCRIPTION The Oki MSM41257A is a fully decoded, dynamic NMOS random access memory organized as 262,144 words x 1 bit. The design is optimized for high-speed, high performance applications

MSM41256A

Abstract: MSM6310 256KDRAM oki motor control
Contextual Info: O K I Semiconductor MSM6310 PCM RECORDING & PLAYBACK LSI GENERAL DESCRIPTION The MSM6310 is a PCM recording & playback LSI w hich is m anufactured using O ki's low p ow er CMOS silicon gate technology. The MSM6310 is designed for the purp o se of endless loop recording by 8-bit PCM.

Contextual Info: O K I Semiconductor MSM6310 PCM Recording and Playback IC GENERAL DESCRIPTION The MSM6310 is a PCM recording & playback IC manufactured using OKI's low power CMOS silicon gate technology. The MSM6310 is designed for endless loop recording by 8-bit PCM. The internal circuit is made up of three units. The first one is an input unit with a line amplifier, low

00MG

Abstract: uP 6308 AD QFP44-P910-V1K MSM6308
Contextual Info: O K I S em iconductor M SM 6308_ SOLID STATE RECORDING LSI FOR 256K-bit DRAM GENERAL DESCRIPTION The MSM6308 is a solid-state recording LSI developed using the ADPCM (Adaptive Dif­ ferential Pulse Code Modulation) technology. When an external microphone, speaker driv­

MN12261

Abstract: MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram
Contextual Info: MOS Memories • EARO M s Memory Size bit 32 T ype No. M em ory Access Supply Com position Tim e Voltage (Word X bit) m ax. (ns) (V) M N 1234 2 X 16 256 M N 1212A 16 X 16 5 272 M N 1218A 17 X 16 10 Power C onsum ption max. (mW ) Package Process O perating

Contextual Info: O K I Semiconductor MSM6308_ SO LID S T A T E R EC O R D IN G LSI FOR 256K-bit DRAM G E N E R A L D ESCRIPTIO N The MSM6308 is a solid-state recording LSI developed using the ADPCM (Adaptive Dif­ ferential PulseC ode M odulation) technology. W hen an external m icrophone, speaker driv­

Contextual Info: O K I Sem iconductor MSM6310 PC M Recording and Playback 1C GENERAL DESCRIPTION The MSM6310 is a PCM recording & playback IC manufactured using OKI's low power CMOS silicon gate technology. The MSM6310 is designed for endless loop recording by 8-bit PGM. The internal circuit is made up of three units. The first one is an input unit with a line amplifier, low

oki motor control

Contextual Info: O K I Semiconductor MSM6310 PCM RECORDING & PLAYBACK LSI GENERAL DESCRIPTION The MSM6310 is a PCM recording & playback LSI which is m anufactured using Oki's low pow er CMOS silicon gate technology. The MSM6310 is designed for the purpose of endless loop recording by 8-bit PCM.