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    MSM51V16900 Search Results

    MSM51V16900 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MSM51V16900-70 OKI Semiconductor 2,097,152-word x 9-Bit Dynamic RAM, Fast Page Mode Type Scan PDF
    MSM51V16900-80 OKI Semiconductor 2,097,152-word x 9-Bit Dynamic RAM, Fast Page Mode Type Scan PDF

    MSM51V16900 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    32-PIN

    Abstract: A10E MSM51V16900-70 MSM51V16900-80
    Text: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16900_ 152-Word MSM51V16900 cycles/64ms 32PIN SOJ32-P-4QO 42PIN 32-PIN A10E MSM51V16900-70 MSM51V16900-80

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16900 152-Word MSM51V16900 cycles/64ms 32PIN SOJ32-P-4QO 42PIN

    m51171

    Abstract: No abstract text available
    Text: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.


    OCR Scan     		PDF MSM51V17180 576-Word 18-Bit MSM51V17180 cycles/32ms m51171

    Bv 42 transistor

    Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
    Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16190 576-Word 18-Bit MSM51V16190 cycles/64ms Bv 42 transistor M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K

    MSM5117180-70

    Abstract: MSM5117180-80
    Text: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5117180 576-Word 18-Bit MSM5117180 cycles/32ms MSM5117180-70 MSM5117180-80

    DD1750

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5117900 152-Word 152-w cycles/32m 32PIN SOJ32-P-4QO 42PIN SOJ42-P-400 b754240 DD1750

    20 TI 54240

    Abstract: MSM51VI6180
    Text: O K I Semiconductor MSM51 V16180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16180 576-Word 18-Bit MSM51V16180 MSM51VI6180 cycles/64ms 20 TI 54240

    32-PIN

    Abstract: MSM5116900-70 MSM5116900-80 B724e
    Text: O K I Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116900 152-Word MSM5116900 cycles/64ms 32PIN SOJ32-P-4QO 42PIN 32-PIN MSM5116900-70 MSM5116900-80 B724e

    m51171

    Abstract: m32AG M5116
    Text: OKI Semiconductor MSM5116180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116180 576-Word 18-Bit MSM5116180 cycles/64ms m51171 m32AG M5116

    42-PIN

    Abstract: MSM51V16180-70 MSM51V16180-80 V16180 MSM51VI6180
    Text: O K I Semiconductor MSM51V16180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16180 576-Word 18-Bit MSM51V16180 MSM51VI6180 cycles/64ms 42-PIN MSM51V16180-70 MSM51V16180-80 V16180

    Bv 42 transistor

    Abstract: CI 576 tsop50 42-PIN MSM51V17190-70 MSM51V17190-80 oki Package SOJ Scans-0053100
    Text: O K I Semiconductor M SM 51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V17190_ 576-Word 18-Bit MSM51V17190 cycles/32ms Bv 42 transistor CI 576 tsop50 42-PIN MSM51V17190-70 MSM51V17190-80 oki Package SOJ Scans-0053100