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msm51v17405b Abstract: MSM51V17405 Text: ¡ Semiconductor MSM51V17405B/BSL ¡ Semiconductor MSM51V17405B/BSL E2G0073-17-41 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V17405B/BSL is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate	Original	PDF	MSM51V17405B/BSL E2G0073-17-41 304-Word MSM51V17405B/BSL 26/24-pin msm51v17405b MSM51V17405
msm51v17405b Abstract: No abstract text available Text: J2G0073-17-41 作成：1998年 1月 MSM51V17405B/BSL l 前回作成：1997年 5月 ¡ 電子デバイス MSM51V17405B/BSL 4,194,304-Wordx4-Bit DYNAMIC RAM：EDO機能付き高速ページモード n 概要 MSM51V17405B/BSLはCMOSプロセス技術を用いた4,194,304ワ−ド×4ビット構成のダイナミックラ	Original	PDF	J2G00731741 MSM51V17405B/BSL MSM51V17405B/BSL 304Word MSM51V17405B/BSLCMOS4 42CMOS 26/24SOJ26/24TSOP 04832ms2 048128msSL 26/24300milSOJ msm51v17405b
DRAMs Abstract: MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c Text: OKI Semiconductor DRAMs 1-Meg DRAMs 5 V Part Number Description Organization Pins / Package Access Time Max (ns) MSM511664B-xx Fast page 64K x 16 40 / DIP 70, 80 MSM514256C-xx Fast page 256K x 4 60, 70, 80 MSM514256CL-xx Fast page, low-power 20 / DIP, ZIP	Original	PDF	MSM511664B-xx MSM514256C-xx MSM514256CL-xx MSM511000C-xx MSM51100CL-xx MSM54V32126 MSM5432126 16-Meg MSM5116160A-xx MSM5116165A-xx DRAMs MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c
Untitled Abstract: No abstract text available Text: O K I Semiconductor MSM5 IVI 7 4 0 5 B/BSL_ E2G 007 3-17 -41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V17405B/BSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17405B/ BSL achieves high integration, high-speed operation, and	OCR Scan	PDF	304-Word MSM51V17405B/BSL MSM51V17405B/ MSM51 7405B 6/24-pin VI7405BSL
msm514260c Abstract: MSM514256C edo 16m x 32 Text: E2G0004-17-42 Product Overview O K I Semiconductor Product Overview DRAM H H 5V 1M xT~1— I MSM5110OOC/CL H 256K X 4 1— I MSM514256C/CL j 128K X 8 h i MSM518126/L MSM518128/L I 64K X 16 M MSM511664C/CL MSM511666C/CL 2M~~hj 2M X 1 I— I M 3M 512100/T 1M X 2 I— ì MSM512200/L~	OCR Scan	PDF	E2G0004-17-42 MSM5110OOC/CL MSM514256C/CL MSM518126/L MSM518128/L MSM511664C/CL MSM511666C/CL 512100/T MSM512200/L~ MSM512800C msm514260c MSM514256C edo 16m x 32
SQJ28-P-400-127 Abstract: No abstract text available Text: E2G0006-17-41 O K I Semiconductor _ Packaging Packaging 5 V Power Supply DRAM Products MSM514256C/CL MSM518126/L MSM518128/L MSM511664C/CL MSM511666C/CL MSM512100/L MSM512200/L MSM512800C MSM512805C MSM514100D/DL MSM514400D/DL MSM514800C/CSL MSM514900C/CSL	OCR Scan	PDF	E2G0006-17-41 MSM511000C/CL MSM514256C/CL MSM518126/L MSM518128/L MSM511664C/CL MSM511666C/CL MSM512100/L MSM512200/L MSM512800C SQJ28-P-400-127