MSM54V32128 Search Results

MAS 10 RCD

Abstract: MSM54V32128 1DQ23
Contextual Info: O K I Semiconductor_ M SM 54V 32126/8_ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM54V32126/8 is a new generation Graphic D RAM organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM54V32126/8 is OKI's CM O S silicon gate

MSM54V32128

Contextual Info: Pr E2L0046-17-Y1 el im DESCRIPTION The MSM54V32126/8 is a new generation Graphics DRAM organized in a 131,072-word ¥ 32-bit configuration. The technology used to fabricate the MSM54V32126/8 is OKI's CMOS silicon gate process technology. The device operates with a single 3.3 V power supply.

Contextual Info: O K I Semiconductor MSM5 4 V3 2 1 2 6 /8 _ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM54V32126/8 is a new generation G raphic D R A M organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM54V32126/8 is O K I's C M O S silicon gate

IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.

Contextual Info: O K I Semiconductor MSM 54V32126/8_ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM 54V32126/8 is a new generation Graphics DRAM organized in a 131,072-word x 32-bit configuration. The technology used to fabricate the MSM 54V32126/8 is OKI's CMOS silicon gate