MT28F004VG Search Results

Contextual Info: PRELIMINARY MT28F004 512K x 8 FLASH MEMORY |U |C = R O N FLASH MEMORY 512K x 8 FEATURES • Seven erase blocks: 16KB boot block protected Two 8KB param eter blocks Four m ain m em ory blocks • 5V ±10% Vcc; 12V ±5% V pp • A ddress access tim es: 60ns, 80ns, 100ns

Micron Quantum Devices

Abstract: MARKING flash 28F
Contextual Info: ADVANCE MT28F004 512K X 8 FLASH MEMORY FLASH MEMORY 512K x 8 FEATURES • Seven erase blocks: - 16KB boot block protected - Two 8KB parameter blocks - Four general memory blocks • Low power: lOOuA standby; 60mA active, MAX • 5V±10% read; 12V±5% w rite/erase

Contextual Info: ADVANCE MT28F004 512K x 8 FLASH MEMORY MICRON I DEVICES. 'NC 512K x 8 I 5V/12V, BOOT BLOCK 5/12 VOLT FLASH MEMORY FLASH MEMORY FEATURES • Seven erase blocks: - 16KB boot block protected - Two 8KB parameter blocks - Four general memory blocks • Low pow er lOOfiA standby; 60mA active, MAX

MT28F004VG

Contextual Info: PRELIMINARY MICRON MT28F004 512K x 8 FLASH MEMORY 512K x 8 I 5V/12V, BOOT BLOCK BOOT BLOCK FLASH MEMORY FLASH MEMORY FEATURES • S even e rase blocks: 16KB b o o t block protected T w o 8KB p a ra m e te r blocks F o u r m a in m e m o ry blocks • 5V ±10% Vcc; 12V ±5% Vpp