MT3S07U Search Results

Contextual Info: TOSHIBA MT3S07U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07U VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure NF = 1.5 dB High Gain |S2iel2 = 9.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz (VCE = 3 V, IC = 15 mA, f = 2 GHz) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: MT3S07U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07U VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 15 mA, f = 2 GHz) Unit: mm

MT3S07U

Contextual Info: MT3S07U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07U VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 15 mA, f = 2 GHz) Unit: mm

MT3S07U

Contextual Info: MT3S07U 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S07U ○ VHF~UHF 帯低電圧動作•低雑音タイプ • 単位: mm 雑音特性が優れています。 : NF = 1.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz : |S21e|2 = 9.5dB

MT3S07U

Contextual Info: MT3S07U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07U VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 15 mA, f = 2 GHz) Unit: mm

Contextual Info: TO SHIBA MT3S07U TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07U Unit in mm VH F—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure High Gain 2.1 NF = 1.5 dB V C E = 3V, IC = 5mA, f = 2 GHz |S2lel2 = 9.5 dB ( V C E = 3 V, Ic = 15mA, f = 2GHz)

MT3S07U

Contextual Info: TO SH IBA MT3S07U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07U Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ¿ 0 . 1 NF = 1.5 dB Vf!F, = 3 V, In = 5 mA, f = 2 GHz Low Noise Figure • High Gain : IS o i J2 = Q K 1.25Ì0.1

TA4029CTC

Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8

JDV2S31CT

Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。

2sc5108

Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
Contextual Info: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and

MT4S300T

Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
Contextual Info: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製