MT4S03 Search Results

MT4S03AU

Contextual Info: TO SH IBA MT4S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S03AU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz 1.25 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)

MT4S03U

Contextual Info: T O SH IB A TENTATIVE MT4S03U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MTA<;n3ii V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: T O SH IB A TENTATIVE MT4S03 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT4S03 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

MT4S03A

Contextual Info: MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

MT4S03

Contextual Info: MT4S03AU Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

MT4S03A

Contextual Info: MT4S03A Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: T O SH IB A TENTATIVE MT4S03 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT4S03 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

MT4S03BU

Abstract: MT4S03B MT4S MT4S03
Contextual Info: MT4S03BU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03BU Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.6dB Typ. (@f = 2GHz) • High Gain: |S21e|2 = 9dB (Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: TO SH IBA MT4S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S03AU Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz 1.25 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)

MT4S03

Contextual Info: MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: MT4S03AU Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

MT4S03AU

Abstract: 2-2K1A
Contextual Info: MT4S03AU Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: gain = 9dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: MT4S03BU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03BU Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.6dB Typ. (@f = 2GHz) • High Gain: |S21e|2 = 9dB (Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: MT4S03 TO SHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT4S03 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS + 0.2 2.9-0.3 • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz TT -a M A X IM U M RATINGS (Ta = 25°C)

MT4S03A

Contextual Info: TO SH IBA TENTATIVE MT4S03A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT4S03A V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.2 2 .9 -0 .3 -fr • Low Noise : Figure : NF = 1.4 dB • High Gain : Gain = 9 dB f = 2 GHz - 3 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: MT4S03BU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03BU Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.6dB typ. (@f = 2GHz) • High Gain: |S21e| = 9dB (typ.) (@f = 2 GHz) 2 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: TO SH IBA MT4S03A TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S03A Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS + 0.2 • • -fr Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz 2 .9 -0 .3 MAXIMUM RATINGS (Ta = 25°C)

MT4S03U

Contextual Info: TOSHIBA MT4S03U TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S03U VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

MT4S03U

Contextual Info: MT4S03U TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S03U Unit in mm VHF—UHF SAND LOW NOISE AMPLIFIER APPLICATIONS J ¿5*0.1 # Low Noise ; Figure ; NF = 1.4 dB • High Gain : Gain —9 dB f = 2 GHz r— a 1 •Q MAXIMUM RATINGS (Ta = 2SX)

MT4S03BU

Abstract: MA80160 MT4S03B 2-2K1A 1050a0 MT4S
Contextual Info: MT4S03BU 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT4S03BU 単位: mm ○ VHF~UHF 帯低雑音増幅用 • 雑音特性が優れています。: NF = 1.6dB 標準 (@f = 2 GHz) • 利得が高い。:|S21e|2 = 9dB(標準) (@f = 2 GHz)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

TA4029CTC

Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ