MT5C1006 Search Results

Contextual Info: — Al SI I N S H M K O N D IJ C T O R . IN C MILITARY SRAM M T 5 C 1 0 0 9 883C 128K X 8 S R A M 128Kx 8 SRAM WITH SINGLE CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS • SM D 5962-89598, Class M • M IL-STD -883, Class B • Radiation tolerant consult factor ')

MT5C1008

Abstract: ET 2314 J937
Contextual Info: AUSTIN SEMICONDUCTOR INC büE D • *1002117 0000327 124 M A U S T I MT5C1008 DIE 128K X 8 SRAM I^ IIC R O N 128Kx 8 SRAM MILITARY SRAM DIE WITH DUAL CHIP ENABLE FEATURES DIE OUTLINE Top View 21 1 1 1 1 1 1 1 1 1 0 9 8 7 6 5 4 3 2 1 0 9 8 7 6 5 4 3 2 OOOOOOODOO OO OOO OO OO

Contextual Info: Al S U N S I M I C 0 \ l l l O í i INC M T 5C 1 0 0 8 8 8 3 C 128K X 8 S R A M S R A M 1 2 8 K x 8 S R A M WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT (Top View) • SM D 5962-89598, Class M • M IL-STD -883, C lass B • Radiation tolerant (consult factory)

Contextual Info: MICRON TECHNOLOGY INC b lllS H T 5SE D iCRCDN D 0 0 3 m 2 7ññ 256K MRN MT5C1005 X 4 SRAM T ^ ß -2 3 -tO SRAM 256K x 4 SRAM FEATURES • • • • • • High speed: 12», 15*, 17,20,25,35 and 45ns High-performance, low-power, CMOS double-metal process

3SB140

Contextual Info: blllSMT O O C ^ D S SSE D MICR ON T E C H N O L O G Y INC T37 MT5C1008 DIE 128K X 8 SRAM M IC R O N MILITARY SRAM DIE 128Kx 8 SRAM WITH DUAL CHIP ENABLE FEATURES High speed: 20,25,35 and 45ns High-performance, low-power, CMOS process Easy memory expansion with CE1, CE2 and OE

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

MTSC1008

Abstract: micron sram DDD347D MT5C1008 MT5C1008DJ-25 5A143 MT5C100B IA15I 81A12
Contextual Info: MICRON TE C H N O L O G Y INC M I C R O t i l l 5 in Q 0 034b4 Oñb SSE » MT5C1008 128K X 8 SRAM N SRAM 128K x 8 SRAM 5 VOLT SRAM WITH OUTPUT ENABLE FEATURES • High speed: 12*, 15*, 17,20,25,35 and 45ns • High-performance, low-power, CMOS double-metal

Contextual Info: M IC R O N 128K SRAM MT5C1008 X 8 SRAM 128Kx 8 SRAM FEATURES • High speed: 12,1 5 , 20 and 25 • Available in 300 mil- and 400 m il-wide SOJ packages • High-perform ance, low-power, CM OS double-metal process • Single +5V ±10% pow er supply • Easy m emory expansion w ith CE1, CE2 and OE

256K x 8 SRAM dip

Contextual Info: MT5C1005 256K X 4 SRAM |U|ICZRON 256K X 4 SRAM SRAM FEATURES PIN ASSIGNMENT Top View • High speed: 12*, 15*, 17, 20, 25,35 and 45ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options

1136m

Contextual Info: U IIC R D N S R A 128K 1 M 2 8 K x 8 S R A MT5C1008 X 8 SRAM M FEATURES • High speed: 12*, 15*, 17,20, 25, 35 and 45ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE1, CE2 and OE

MT8C1008

Contextual Info: MICRON TECHNOLOGY INC SSE D • L. 1 1 1 5 H I 000341=4 dfib « U R N V-'llCROfNJ 128K MT5C1008 X 8 SRAM 'T'-M w-'L's-m- SRAM 128K X 8 SRAM FEATURES • High speed: 12*, 15*, 17,20,25,35 and 45ns