MTB3N60E1 Search Results
MTB3N60E1 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|---|
| MTB3N60E1 |
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TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate D2PAK-SL Straight-Leaded Th | Original | 72.49KB | 4 |
MTB3N60E1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: MOTOROLA Order th is docum ent by MTB3N60E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB3N60E1 TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS D2PAK-SL Straight-Leaded |
OCR Scan |
MTB3N60E1/D MTB3N60E1 418C-01 3b725S | |
TMOS E-FET
Abstract: 418C MTB3N60E1
|
Original |
MTB3N60E1/D MTB3N60E1 TMOS E-FET 418C MTB3N60E1 | |
transistor d 965 alContextual Info: iNàiiììian MOTOROLA Order this document by MTB3N60E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB3N60E1 TM OS E-FET High Energy Pow er FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS D2PAK-SL Straight-Leaded |
OCR Scan |
MTB3N60E1/D 1-800-W1-2447 transistor d 965 al |