MTP1N60 Search Results

MTP1N60

Abstract: mtp1n
Contextual Info: MTP1N60E Preferred Device Power MOSFET 1 Amp, 600 Volts N−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, the MOSFET is designed to

MTP1N60E

Abstract: AN569 MTP1N60
Contextual Info: MTP1N60E Preferred Device Power MOSFET 1 Amp, 600 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to

AN569

Abstract: MTP1N60E
Contextual Info: MOTOROLA Order this document by MTP1N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP1N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 600 VOLTS

Contextual Info: Jbztni-L.onaucto'i iJ^ , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel Mosfet Transistor MTP1N60 FEATURES • Drain Current -ID= 1A@ TC=25°C • Drain Source Voltage: VDSS= 600V(Min)

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP1N60E CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

MTP1N60

Abstract: mtp1n
Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP1N60 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

Contextual Info: MOTOROLA O rder this docum ent by M TP1N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP1N60E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

AND8078

Abstract: NCP1052b q2n3904 NCP1200P60 Transistor Q2N3904 D1N5242 simulation flyback converter Christophe Basso 1N4937 pspice npn q2n3904
Contextual Info: AND8078/D A Simple Low-Cost Non-Isolated Universal Input Off-Line Converter Prepared by: Roland Saint–Pierre Field Applications Engineer http://onsemi.com APPLICATION NOTE INTRODUCTION Switch–mode off–line power conversion typically entails a means of galvanic isolation from primary to secondary. In

MTP2P45

Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

mgb20n40cl

Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
Contextual Info: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

MFE9200

Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­

transistor marking code 12W SOT-23

Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

k 3561 MOSFET

Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
Contextual Info: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­

P1N55

Abstract: MTP1N55 MTP1N60 100SC reco relay
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M T P 1N 55 M T P 1N 60 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 1 AMPERE rDS on = 12 OHMS 550 and 600 VOLTS These TM OS Power FETs are designed for high voltage, high

3N60

Contextual Info: Power Management IPS102 IN-PLUG series: IPS102 Critical Mode PFC Controller Low Cost, High Efficiency PRELIMINARY REV. 5 INTRODUCTION FEATURES DESCRIPTION  The IN-PLUG IPS102 is a primary-side switching controller which provides simple yet high performance active power factor correction PFC .

IPS15HI

Abstract: Q817C
Contextual Info: IN-PLUG IPS1 5 H Datasheet – Rev.10 – Hiccup flyback Cont® r oller – Easy Opt o Failsaf e Pr ot ect ion IN-PLUG series: IPS1 5 H Enhanced Off-line Swit cher Wit h Hiccup, Low Cost, High Efficiency, Low Stand-By Power. Fail- Saf e Protection from Optocoupler Failure

Q817C

Abstract: flyback transformer diagram crt
Contextual Info: Synchronizable Flyback Controller IPS1 6 Pr eliminar y Dat asheet Rev. 2 IN-PLUG series Low Cost, High Efficiency, Low Power Synchronizable Flyback Controller IPS1 6 PRELIMINARY DATASHEET REV2 INTRODUCTION DESCRIPTION The IN-PLUG® IPS16 has been designed for low-cost,

NTP3055AV

Abstract: NTP3055 irf630 irf640 MTP5P25 IRF540 MTB1306 MTB3N100ET4 MTB3N60ET4 0708B MTP6N60E equivalent
Contextual Info: PRODUCT / PROCESS CHANGE NOTIFICATION UPDATE Generic Copy 08-DEC-2000 SUBJECT: Update Notification #10395 TITLE: Modification To PCN #10344 EFFECTIVE DATE: 17-Mar-2001 AFFECTED CHANGE CATEGORY S : Subcontractor Assembly Site Subcontractor Test Site Assembly Process