MTP20 Search Results

AN569

Abstract: MTP20N20E
Contextual Info: MTP20N20E Preferred Device Power MOSFET 20 Amps, 200 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

Contextual Info: MOTOROLA Order this document by MTP20N20E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP20N20E T M O S E-FET™ P o w e r F ield E ffe c t T ra n s is to r Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high

Contextual Info: MTP20N06V Preferred Device Power MOSFET 20 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

Contextual Info: <£e.mi-Concluctoi ZPioducti, Inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201 376-2922 (212) 227-6005 FAX: (201) 376-8960 MTP20N10E Designer's Data Sheet TMOS IV Power Field Effect Transistor TMOS POWER FET 20 AMPERES ros(on) = 0.15 OHM

transistor M 839

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTP20N20E T M O S E -FE T ™ P o w er Field E ffe c t T ran sisto r M otorola P refe rred D evice N-Channel Enhancement-Mode Silicon Gate ir This advanced TMOS E -F E T is designed lo w ithstand high

MTP20N10

Abstract: 1RF531
Contextual Info: NATL N-Channel Power MOSFETs Continued 2N67S5 2N6756 IRF130 IRF132 IRF133 IRF530 S 1-6 IRF532 IRF533 MTP20N10 2N6757 IRF230 IRF231 lD @ TC = 25 'C (A) •rD Tc = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-2Û4AA (42) TO-204AA

Contextual Info: MOTOROLA Order this document by MTP20N20E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP20N20E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 20 AMPERES 200 VOLTS

C - 4834 transistor

Abstract: K30 mosfet MOSFET K30 C 4834 transistor transistor k30 4835 mosfet 014 IR MOSFET Transistor FET K30 K30 FET mosfet 4835
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TM O S E -FE T ™ P o w er Field E ffe c t T ran sisto r MTP20N20E M o to rola Preferred D e vic e N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high

MTP20P06

Abstract: MTM20P06 AN569 MJE210 motorola 6810
Contextual Info: Order this data sheet by MTM20P06/D MoToRom SEMICONDUCTOR TECHNICAL DATA MTM20P06 Data Sheet Designer’s MTP20P06 Power Field Effect Enhancement-Mode P=ChanneI silicon These Gate TMOS TMOS switching solenoid o Silicon Power applications and relay FETs are designed

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P ro d u c t Preview MTP20N06V TM O S V Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FET 20 A M P E R E S 6 0 V O LTS T M O S V is a new te ch n o lo g y d e sig n e d to a chie ve an o n -re s is tance area prod u ct a bo u t o n e -h a lf th a t of sta n d ard M O SFETs. This

TP20N

Contextual Info: MOT OR OL A SC CXSTRS/R 4bE F MOTOROLA • SEMICONDUCTOR D ■ b3b?254 00^3251 Order this data sheet by MTP20N06/D 2 «flO Tb _ ^ 3 f - / TECHNICAL DATA Designer's Data Sheet M TP20N 06 Pow er M OSFET N-Channel Enhancement-Mode Silicon Gate

mtm20n10

Abstract: MTP20N10 TP20N
Contextual Info: MOTOROLA SC XSTRS/R 14'E D I F b3b?S54 QDTQQflS ? | MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTM20N10 MTP20N08 MTP20N10 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS TM O S PO W ER F ET s 20 A M P E R E S

MTP20N06V equivalent

Abstract: TMOS E-FET TMOS power FET AN569 MTP20N06V
Contextual Info: MOTOROLA Order this document by MTP20N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP20N06V Designer's TMOS Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This

MTP20N15E

Contextual Info: MTP20N15E Preferred Device Power MOSFET 20 Amps, 150 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

ldc 4000

Contextual Info: MTP20N20E Preferred Device Power MOSFET 20 Amps, 200 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

Contextual Info: MOTOROLA SC IME P I b3b?254 00*^030 3 a I XSTRS/R F MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTP20P06 Advance Information P o w e r Field E ffe c t T ra n sisto r P-Channel Enhancement-Mode Silicon Gate TMOS TM O S POW ER FET 20 A M PER ES rDS(on = 0.2 OHM

20N15E

Contextual Info: MTP20N15E Power MOSFET 20 Amps, 150 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

Contextual Info: MTP20N20E Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)20 I(DM) Max. (A) Pulsed I(D)12 @Temp (øC)100 IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55

MTP20N06V equivalent

Abstract: AN569 MTP20N06V
Contextual Info: MTP20N06V Preferred Device Power MOSFET 20 Amps, 60 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

MTP20N10E

Abstract: 100X1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTP20N10E Designer's Data Sheet T M O S IV P o w er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FET 20 AMPERES rD S o n = 0 1 5 O H M 100 V O L T S T h is a d v a n c e d " E " s e rie s o f T M O S p o w e r M O S F E T s is

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

mtp606

Abstract: MTP685 3360d 6020B MTP475
Contextual Info: MTP Vishay Wet Tantalum Capacitors Subminiature, Axial Leads FEATURES • Maximum CV/Unit volume • Ruggedized construction • Low dissipation factor • Low DC leakage • 100% 25°C DCL screening • 100% voltage age @ 85°C - 8 hours • 100% cap & DF screening

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157