MTP2N60 Search Results

Contextual Info: , Unc, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP2N60E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination

MTP2N60E

Abstract: AN569 MTP2N60E MOTOROLA Q348
Contextual Info: MOTOROLA Order this document by MTP2N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP2N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N60E CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

Contextual Info: MTP2N60E Designer’s Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading

MTP2N60

Abstract: mtp2n
Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N60 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

1200AP40

Abstract: 1200ap100 200a6 1200ap60 1200ap NCP1200AP40 PWM IC 1200ap40 NCP1200AP100 200A1 ncp1200ap60
Contextual Info: NCP1200A PWM Current−Mode Controller for Universal Off−Line Supplies Featuring Low Standby Power Housed in SO-8 or DIP8 package, the NCP1200A enhances the previous NCP1200 series by offering a reduced optocoupler current together with an increased drive capability. Thanks to its novel

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

Contextual Info: MOTOROLA O rder this docum ent by M TP2N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP2N60E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

1N4007 diode PIV rating

Abstract: NPC1200 AND8023 NCP1200 CROSS REFERENCE NPC-1200 NPC1200 equivalent footprint for transformer in orcad trouble shorting top switch 250 smps MBRA140LT3 EGSTON C 44
Contextual Info: AND8023/D Implementing the NCP1200 in Low-Cost AC/DC Converters Prepared by: Christophe Basso ON Semiconductor Avenue Eisenhower, BP1056, 31023 TOULOUSE Cedex France 33 0 5 61 19 90 12 e–mail: christophe.basso@onsemi.com The NCP1200 implements a standard current mode

Contextual Info: LT1738 Slew Rate Controlled Ultralow Noise DC/DC Controller U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ The LT 1738 is a switching regulator controller designed to lower conducted and radiated electromagnetic interference EMI . Ultralow noise and EMI are achieved by

NCP1200P60

Abstract: ic ncp1200 AND8023 NCP1200 TL431 model SPICE TL431 SMD MBR140P AND8038 optocoupler spice model SFH615A-2 spice model
Contextual Info: AND8038 Implementing the NCP1200 in a 10 W AC/DC Wall Adapter Prepared by: Christophe Basso ON Semiconductor http://onsemi.com APPLICATION NOTE INTRODUCTION rugged 10 W adapter. This adapter is designed to operate from a universal mains 90–260 VAC while providing a

NPC-1200

Abstract: 1N4007 diode PIV rating NPC1200 equivalent transformer egston AND8023 MBRA140LT3 npc1200 2n2222 spice model flyback transformer eldor footprint for transformer in orcad
Contextual Info: AND8023/D Implementing the NCP1200 in Low-Cost AC/DC Converters Prepared by: Christophe Basso ON Semiconductor http://onsemi.com APPLICATION NOTE S External MOSFET connection: by leaving the external MOSFET external to the IC, you can select avalanche proof devices which, in certain cases e.g. low output

MTP2P45

Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5

mtp3n6u

Abstract: MTP2P45 MTP1N60 MTP1N95 MTP2N20 MTP2N25 MTP2N35 MTP2N40 MTP2N45 MTP2N50
Contextual Info: - 286 - m % ít f ft X t Vd s or * Vd g € V £ n fé (Ta=25tî) Vos (V) Pd Id I gss * /CH * /CH (A) (W) (nA) MTP1N6Û MOT N 600 ±20 1.0 40 MTP1N95 MOT N 950 ±20 1 75 MTP2N18 MOT N 180 ±20 2.0 50 MTP2N20 MOT N 20Q ±20 2.0 50 MTP2N25 MOT N 250 ±20 2

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

mgb20n40cl

Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
Contextual Info: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to

ac-dc voltage regulator using SCR circuit diagram

Abstract: marking 735 optocoupler 1n49376
Contextual Info: NCP1201 PWM Current-Mode Controller for Universal Off-Line Supplies Featuring Low Standby Power with Fault Protection Modes Housed in SOIC−8 or PDIP−8 package, the NCP1201 enhances the previous NCP1200 series by offering a reduced optocoupler current with additional Brownout Detection Protection BOK . Similarly, the

MTP3N80

Abstract: MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60
Contextual Info: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

MFE9200

Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­