MTP75 Search Results

MTP75N05HD equivalent

Abstract: MTP75N05HD AN569
Contextual Info: MTP75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy–efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

M75N06

Contextual Info: MTP75N06HD Preferred Device Power MOSFET 75 A, 60 V, N−Channel, TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

Contextual Info: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP75N06HD HDTMOS E-FET™ High Density Power FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 75 AMPERES This advanced high-cell density HDTMOS E-FET is designed to

MTP75N05HD

Abstract: AN569 mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by MTP75N05HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET  Power Field Effect Transistor Designer's MTP75N05HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 9.5 mΩ

MTP75N06HD

Abstract: AN569
Contextual Info: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET  High Density Power FET Designer's MTP75N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 10.0 mOHM

mtp75n05hd

Abstract: mosfet transistor 400 volts.100 amperes
Contextual Info: MTP75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy−efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

MTP75N03HDL

Abstract: MTP75N03HDL/D AN569
Contextual Info: MTP75N03HDL Preferred Device Power MOSFET 75 Amps, 25 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

75n06hd

Abstract: MTP75N06
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTP75N06HD HDTM O S E-FET™ High D en sity P o w er FET M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced high—cell density HDTMOS E -F E T is designed to

MTP75N03HDL

Contextual Info: MTP75N03HDL Preferred Device Power MOSFET 75 Amps, 25 Volts, Logic Level N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

AN569

Abstract: MTP75N05HD mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by MTP75N05HD/D SEMICONDUCTOR TECHNICAL DATA HDTMOS E-FET Power Field Effect Transistor MTP75N05HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES 50 VOLTS RDS on = 9.5 mΩ This advanced high–cell density HDTMOS E–FET is designed to

AN569

Abstract: MTP75N06HD HDTMOS TRANSISTOR motorola 838
Contextual Info: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET  High Density Power FET Designer's MTP75N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 10.0 mOHM

4901 mosfet

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A dvance Information MTP75N03HDL HD TM O S E-FET High D en sity P o w er FET M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate ¥ This advanced high-cell density HDTMOS E -F E T is designed to withstand high energy in the avalanche and commutation modes.

MTP75N03HDL

Abstract: MTP75N03HDL/D
Contextual Info: MOTOROLA Order this document by MTP75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTP75N03HDL HDTMOS E-FET  High Density Power FET Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET LOGIC LEVEL 75 AMPERES

Contextual Info: M O TO RO LA Order this document by MTP75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information H D TM O S E-FE T High Density Pow er FET M TP75N03HDL Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET LOGIC LEVEL 75 AMPERES

M75N06HD

Abstract: m75n06
Contextual Info: MTP75N06HD Preferred Device Power MOSFET 75 A, 60 V, N−Channel, TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

MTP75N06HD

Abstract: MTP75N06 AN569
Contextual Info: MTP75N06HD Preferred Device Power MOSFET 75 Amps, 60 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

MTP75N05HD

Abstract: MTP75N05 AN569 mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by MTP75N05HD/D SEMICONDUCTOR TECHNICAL DATA HDTMOS E-FET Power Field Effect Transistor MTP75N05HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES 50 VOLTS RDS on = 9.5 mΩ This advanced high–cell density HDTMOS E–FET is designed to

tp75n05hd

Contextual Info: MOTOROLA Order this document by MTP75N05HD/D SEMICONDUCTOR TECHNICAL DATA M TP75N 05H D HDTMOS E-FET Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced high-cell density HDTMOS E-FET is designed to

FET MOSFET transistor ""

Abstract: 4912 10VJ AN569 MTP75N06HD
Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTP75N06HD H DTM O S E-FET™ High D ensity P o w er FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 10-° mOHM 60 VOLTS This advanced high-cell density HDTMOS E -F E T is designed to

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

CS5323

Abstract: BAS40LT1 CS5323GDW20 CS5323GDWR20 MTD3302 MTP75N06HD NCP5351
Contextual Info: CS5323 Three-Phase Buck Controller with 5-Bit DAC The CS5323 is a three–phase step down controller that incorporates all control functions required to power next generation processors. Proprietary multi–phase architecture guarantees balanced load current

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9