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Voltronics Corporation NMTP75C CAP FILM TRIM
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DigiKey	NMTP75C	Bulk			50	1 - 10 - 100 $196.8238 1000 $196.8238 10000 $196.8238	Buy Now
Voltronics Corporation NMTP75CE CAP FILM TRIM
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DigiKey	NMTP75CE	Bulk			50	1 - 10 - 100 $204.0704 1000 $204.0704 10000 $204.0704	Buy Now
Banner Engineering Corp IMTP.753P FIBER IMTP.753P
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DigiKey	IMTP.753P	Bulk			1	1 $132 10 $132 100 $132 1000 $132 10000 $132	Buy Now
Newark	IMTP.753P	Bulk			1	1 $132 10 $132 100 $132 1000 $132 10000 $132	Buy Now
Voltronics Corporation NMTP75CFS CAP FILM TRIM
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DigiKey	NMTP75CFS	Bulk			50	1 - 10 - 100 $206.9364 1000 $206.9364 10000 $206.9364	Buy Now
Knowles Corporation NMTP75C Trimmer / Variable Capacitors VARCAP, 75PF, 2000 VDC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	NMTP75C					1 - 10 - 100 $196.82 1000 $196.82 10000 $196.82	Get Quote

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MTP75 Datasheets (21)

Part	Manufacturer	Description	Datasheet Type	PDF
MTP75N03HD	Motorola	HDTMOS E-FET power field effect transistor	Original	PDF
MTP75N03HDL	Motorola	TMOS POWER FET LOGIC LEVEL 75 AMPERES RDS(on) = 9.0 mOHM 25 VOLTS	Original	PDF
MTP75N03HDL	On Semiconductor	Power MOSFET 75 A, 25 V, Logic Level	Original	PDF
MTP75N03HDL	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
MTP75N03HDL	On Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 30V, 37.5A, Pkg Style TO220AB	Scan	PDF
MTP75N03HDL/D	On Semiconductor	TMOS POWER FET LOGIC LEVEL 75 AMPERES	Original	PDF
MTP75N03HDL-D	On Semiconductor	Power MOSFET 75 Amps, 25 Volts, Logic Level N-Chan	Original	PDF
MTP75N05HD	Motorola	TMOS POWER FET 75 AMPERES, 50 Volts	Original	PDF
MTP75N05HD	On Semiconductor	Power MOSFET 75 A, 50 V	Original	PDF
MTP75N05HD	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
MTP75N05HD	On Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 50V, 37.5A, Pkg Style TO220AB	Scan	PDF
MTP75N05HD/D	On Semiconductor	TMOS POWER FET LOGIC LEVEL 75 AMPERES	Original	PDF
MTP75N05HD/D	On Semiconductor	TMOS POWER FET 75 AMPERES 50 VOLTS	Original	PDF
MTP75N05HD-D	On Semiconductor	Power MOSFET 75 Amps, 50 Volts N-Channel TO-220	Original	PDF

MTP75N06HD	Motorola	TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS	Original	PDF
MTP75N06HD	On Semiconductor	Power MOSFET 75 Amps, 60 Volts	Original	PDF
MTP75N06HD	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
MTP75N06HD	On Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 60V, 37.5A, Pkg Style TO220AB	Scan	PDF
MTP75N06HD/D	On Semiconductor	TMOS POWER FET 75 AMPERES 50 VOLTS	Original	PDF
MTP75N06HD-D	On Semiconductor	Power MOSFET 75 Amps, 60 Volts N-Channel TO-220	Original	PDF

MTP75 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MTP75N05HD equivalent Abstract: MTP75N05HD AN569 Text: MTP75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy–efficient design also offers a drain–to–source diode with a fast recovery time. Designed for	Original	PDF	MTP75N05HD r14525 MTP75N05HD/D MTP75N05HD equivalent MTP75N05HD AN569
M75N06 Abstract: No abstract text available Text: MTP75N06HD Preferred Device Power MOSFET 75 A, 60 V, N−Channel, TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for	Original	PDF	MTP75N06HD MTP75N06HD/D M75N06
MTP75N05HD Abstract: AN569 mosfet transistor 400 volts.100 amperes Text: MOTOROLA Order this document by MTP75N05HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET  Power Field Effect Transistor Designer's MTP75N05HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 9.5 mΩ	Original	PDF	MTP75N05HD/D MTP75N05HD MTP75N05HD/D* MTP75N05HD AN569 mosfet transistor 400 volts.100 amperes
MTP75N06HD Abstract: AN569 Text: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET  High Density Power FET Designer's MTP75N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 10.0 mOHM	Original	PDF	MTP75N06HD/D MTP75N06HD MTP75N06HD/D* MTP75N06HD AN569
mtp75n05hd Abstract: mosfet transistor 400 volts.100 amperes Text: MTP75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy−efficient design also offers a drain−to−source diode with a fast recovery time. Designed for	Original	PDF	MTP75N05HD O-220 r14525 MTP75N05HD/D mtp75n05hd mosfet transistor 400 volts.100 amperes
MTP75N03HDL Abstract: MTP75N03HDL/D AN569 Text: MTP75N03HDL Preferred Device Power MOSFET 75 Amps, 25 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for	Original	PDF	MTP75N03HDL r14525 MTP75N03HDL/D MTP75N03HDL MTP75N03HDL/D AN569
MTP75N03HDL Abstract: No abstract text available Text: MTP75N03HDL Preferred Device Power MOSFET 75 Amps, 25 Volts, Logic Level N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for	Original	PDF	MTP75N03HDL O-220 r14525 MTP75N03HDL/D MTP75N03HDL
AN569 Abstract: MTP75N05HD mosfet transistor 400 volts.100 amperes Text: MOTOROLA Order this document by MTP75N05HD/D SEMICONDUCTOR TECHNICAL DATA HDTMOS E-FET Power Field Effect Transistor MTP75N05HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES 50 VOLTS RDS on = 9.5 mΩ This advanced high–cell density HDTMOS E–FET is designed to	Original	PDF	MTP75N05HD/D MTP75N05HD AN569 MTP75N05HD mosfet transistor 400 volts.100 amperes
AN569 Abstract: MTP75N06HD HDTMOS TRANSISTOR motorola 838 Text: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET  High Density Power FET Designer's MTP75N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 10.0 mOHM	Original	PDF	MTP75N06HD/D MTP75N06HD MTP75N06HD/D* AN569 MTP75N06HD HDTMOS TRANSISTOR motorola 838
MTP75N03HDL Abstract: MTP75N03HDL/D Text: MOTOROLA Order this document by MTP75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTP75N03HDL HDTMOS E-FET  High Density Power FET Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET LOGIC LEVEL 75 AMPERES	Original	PDF	MTP75N03HDL/D MTP75N03HDL MTP75N03HDL/D* MTP75N03HDL MTP75N03HDL/D
AN569 Abstract: MTP75N05HD mosfet transistor 400 volts.100 amperes Text: MOTOROLA Order this document by MTP75N05HD/D SEMICONDUCTOR TECHNICAL DATA HDTMOS E-FET  Power Field Effect Transistor MTP75N05HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES 50 VOLTS RDS on = 9.5 mΩ	Original	PDF	MTP75N05HD/D MTP75N05HD AN569 MTP75N05HD mosfet transistor 400 volts.100 amperes
M75N06HD Abstract: m75n06 Text: MTP75N06HD Preferred Device Power MOSFET 75 A, 60 V, N−Channel, TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for	Original	PDF	MTP75N06HD O-220 MTP75N06HD/D M75N06HD m75n06
MTP75N06HD Abstract: MTP75N06 AN569 Text: MTP75N06HD Preferred Device Power MOSFET 75 Amps, 60 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for	Original	PDF	MTP75N06HD r14525 MTP75N06HD/D MTP75N06HD MTP75N06 AN569
MTP75N05HD Abstract: MTP75N05 AN569 mosfet transistor 400 volts.100 amperes Text: MOTOROLA Order this document by MTP75N05HD/D SEMICONDUCTOR TECHNICAL DATA HDTMOS E-FET Power Field Effect Transistor MTP75N05HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES 50 VOLTS RDS on = 9.5 mΩ This advanced high–cell density HDTMOS E–FET is designed to	Original	PDF	MTP75N05HD/D MTP75N05HD MTP75N05HD MTP75N05 AN569 mosfet transistor 400 volts.100 amperes

CS5323 Abstract: BAS40LT1 CS5323GDW20 CS5323GDWR20 MTD3302 MTP75N06HD NCP5351 Text: CS5323 Three-Phase Buck Controller with 5-Bit DAC The CS5323 is a three–phase step down controller that incorporates all control functions required to power next generation processors. Proprietary multi–phase architecture guarantees balanced load current	Original	PDF	CS5323 CS5323 r14525 CS5323/D BAS40LT1 CS5323GDW20 CS5323GDWR20 MTD3302 MTP75N06HD NCP5351
mosfet cross reference Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local	Original	PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	PDF	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
transistor mosfet buv18a Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9	Original	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP75N06HD HDTMOS E-FET™ High Density Power FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 75 AMPERES This advanced high-cell density HDTMOS E-FET is designed to	OCR Scan	PDF	MTP75N06HD/D MTP75N06HD
75n06hd Abstract: MTP75N06 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTP75N06HD HDTM O S E-FET™ High D en sity P o w er FET M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced high—cell density HDTMOS E -F E T is designed to	OCR Scan	PDF
4901 mosfet Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A dvance Information MTP75N03HDL HD TM O S E-FET High D en sity P o w er FET M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate ¥ This advanced high-cell density HDTMOS E -F E T is designed to withstand high energy in the avalanche and commutation modes.	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: M O TO RO LA Order this document by MTP75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information H D TM O S E-FE T High Density Pow er FET M TP75N03HDL Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET LOGIC LEVEL 75 AMPERES	OCR Scan	PDF	MTP75N03HDL/D TP75N03HDL
tp75n05hd Abstract: No abstract text available Text: MOTOROLA Order this document by MTP75N05HD/D SEMICONDUCTOR TECHNICAL DATA M TP75N 05H D HDTMOS E-FET Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced high-cell density HDTMOS E-FET is designed to	OCR Scan	PDF	MTP75N05HD/D TP75N 21A-09 tp75n05hd
FET MOSFET transistor "" Abstract: 4912 10VJ AN569 MTP75N06HD Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTP75N06HD H DTM O S E-FET™ High D ensity P o w er FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 10-° mOHM 60 VOLTS This advanced high-cell density HDTMOS E -F E T is designed to	OCR Scan	PDF	MTP75N06HD 0E-05 0E-04 0E-03 0E-02 IjOH-01 FET MOSFET transistor "" 4912 10VJ AN569

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MTP75 Price and Stock

Voltronics Corporation NMTP75C

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Banner Engineering Corp IMTP.753P

Voltronics Corporation NMTP75CFS

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MTP75 Datasheets (21)

MTP75 Datasheets Context Search

MTP75N05HD equivalent

M75N06

MTP75N05HD

MTP75N06HD

mtp75n05hd

MTP75N03HDL

MTP75N03HDL

AN569

AN569

MTP75N03HDL

AN569

M75N06HD

MTP75N06HD

MTP75N05HD

CS5323

mosfet cross reference

fqp60n06

transistor mosfet buv18a

Untitled

75n06hd

4901 mosfet

Untitled

tp75n05hd

FET MOSFET transistor ""