MTT 65 A 12 N Search Results

MRF873

Abstract: j30 124 transistor 150 watt amplifier advantages and disadvantages MRF650 transistor j334 AN1526 motorola rf book transistor j326 power semiconductor 1973 Nippon capacitors
Contextual Info: MOTOROLA Order this document by AN1526/D SEMICONDUCTOR APPLICATION NOTE RF Power Device Impedances: Practical Considerations AN1526 Prepared by: Alan Wood and Bob Davidson Motorola Semiconductor Products Sector ABSTRACT The definition of large–signal series equivalent input and

2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF873 motorola an282 application RF TRANSISTOR 2.5 GHZ s parameter Theory of Modern Electronic Semiconductor Device Motorola Power Transistor Data Book J102 fet uhf microwave fet 2 watt rf transistor
Contextual Info: MOTOROLA Order this document by AN1526/D SEMICONDUCTOR APPLICATION NOTE AN1526 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. RF Power Device Impedances: Practical Considerations Prepared by: Alan Wood and Bob Davidson

MRF873

Abstract: motorola SEMICONDUCTOR APPLICATION NOTE POWER AMP motorola an282 application MRF650 motorola rf Power Transistor Data Book schematic diagram 800 watt power amplifier TRANSISTOR D 1978 AN1526 Theory of Modern Electronic Semiconductor Device broad-band Microwave Class-C Transistor Amplifiers
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1526/D AN1526 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. RF Power Device Impedances:

hp11612a

Abstract: anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473
Contextual Info: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mount‑ ed PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is gen‑

procedure ISO 9001

Abstract: micromechanical
Contextual Info: TECHNICAL DATA SHEET R 596 - - - - - - S SM MTT P Poow weerr M Miiccrroo-S SP PD DTT w wiitthh 1100 G GH Hzz ccaappaabbiilliittiieess Issue : Oct-03-2007 An innovative and original « micro-mechanical » design allows the R596 SMT micro-relay to bring together

R596

Abstract: micromechanical
Contextual Info: RADIALL TECHNICAL DATA SHEET R 596 - - - - - - S SM MTT P Poow weerr M Miiccrroo-S SP PD DTT w wiitthh 1100 G GH Hzz ccaappaabbiilliittiieess Issue : Feb-09-2006 An innovative and original « micro-mechanical » design allows the R596 SMT micro-relay to bring together

R596

Abstract: micromechanical
Contextual Info: RADIALL TECHNICAL DATA SHEET R 596 - - - - - - S SM MTT P Poow weerr M Miiccrroo-S SP PD DTT w wiitthh 1100 G GH Hzz ccaappaabbiilliittiieess Issue : June-29-2005 An innovative and original « micro-mechanical » design allows the R596 SMT micro-relay to bring together

siemens THY F 75 A 80

Abstract: siemens thyodul Siemens MTT 95 A 12 N siemens THY M 75 A SIEMENS THYRISTOR thyodul siemens thyodul MTT40A 12 n siemens THY F 75 A Siemens MTT 95 A 06 N MTT40A MTT95A
Contextual Info: SIEMENS AKTIENGESELLSCHAF QBE t 6235bOS OülSbHS H • S I E Í ■ " p % 3 S~-A3 Circuit Configurations Available MTT40 A . MTT 95 A, MTD 40 A . MTD 95 A MDT40A.MDT95A Fully controlled version MTT AK K |—<>— — » 2 \L. Half-controlled version

POWER COMMAND HM 1211

Abstract: power generation POWER COMMAND HM 1211 HP48-HP33 AR31-AR16 AR15-AR0 DSP56300 HP19 HP32 hp4841 HP48-41
Contextual Info: 6 HOST INTERFACE HI32 The Host Interface (HI32) provides a fast parallel host port up to 32 bits wide, which may be connected directly to the host bus. The HI32 supports a variety of standard buses, and provides glue-less connection with a number of industry standard microcomputers, microprocessors, DSPs and DMA

BJW transistor

Contextual Info: TELEPHONE: 201 376-2922 (212) 227-6005 TELEX: 13-8720 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Germanium Transistors 2M1T92 absolute maximum ratings: (25°C) Voltage Collector to Base Collector to Emitter Emitter to Base Currantt Powtr Vrw, (RUK ^ 10K)

MTT 95 A 12 N

Abstract: mtt 95 microwave detector diode MTT 65 A 12 N Hewlett-Packard microwave pin diode 5964-3898E 0/Siemens MTT 95 A 12 N
Contextual Info: hH Temperature Dependence of Schottky Detector Voltage Sensitivity Application Note 956-6 Although Schottky barrier diodes are less sensitive to temperature changes than are point-contact diodes[1], the effect on detector voltage sensitivity may be significant. Performance

KTA 3-25

Abstract: verilog code for 8254 timer MCF5204 so-8 marking code cyle
Contextual Info: ColdFire 2/2M Integrated Microprocessor User’s Manual Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

IC vertical lg

Abstract: LA7824 OIP-16 LG CRT
Contextual Info: I SAXYO i L A 7 8 2 4 M onolithic Linear IC No.l6«B I Color CRT Display Synchronization, Deflection Circuit •jS.W: The LA7824 Is an IC that has a wide vertioal pull-in range of 20Hz and oon tains a generator of horizontal, vertical blanking pulses §4^w JPSas W e main

galena

Abstract: INSTRUCTION SET motorola 6800 kta 3-25 COLDFIRE MCF5206 MCF5204 so-8 marking code cyle motorola - 5118 user manual motorola 5118 user manual Motorola mtm detailed service manual
Contextual Info: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. ColdFire 2/2M Integrated Microprocessor User’s Manual Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

LM124

Abstract: GDFP-F14 LM124/BDA lu380 LM124 philips
Contextual Info: P hilips Sem iconductors M ilita ry Linear Products P roduct specifica tio n Low power quad operational amplifier FEATURES UNIQUE FEATURES • Internally frequency compensated for unity gain In the linear mode the input common-mode voltage range inctudes ground and the output

K545

Contextual Info: N AI1ER PHILIPS/DISCRETE b 'lE I> bb53R31 DD3D7bS 14E « A P X Product Specification Philips Semiconductors BU K545-1OOA/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

F14-F15

Abstract: HM65664 Fn 1016 MATRA MHS 28 pins ML-ND L1 Z.35 ha 1452 4c1ej
Contextual Info: Sflbfl4 5 b OGGITM? 323 •M M HS T '? £ ~ z 3 ~ / z _ January 1991 MATRA M H S HM 65664 HI-REL DATA SHEET 8kx8 ULTIMATE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPLLY EQUAL CYCLE AND ACCESS TIME GATED INPUTS : NO PULL-UP/DOWN

ckt of band reject filter

Abstract: AVANTEK AN-S003 AN-S005 Lumped Resonator Oscillator w17 transistor RLC bandstop filter design Avantek rf OSCILLATORS dielectric resonator avantek waveguide Avantek mixer
Contextual Info: Using Avago Technologies MSA Series MMIC Amplifiers as Frequency Converters Application Note S005 Introduction Vcc The monolithic microwave integrated circuit MMIC used in the frequency converter consists of a silicon bipolar Darlington pair with associated bias resistors. It is

w17 transistor

Abstract: AVANTEK MSA-0885 AVANTEK AN-S003 RLC bandstop filter design AN-S003 Ceramic Resonator GHz MSA-067 msa series ANS003
Contextual Info: Using Hewlett-Packard MSA Series MMIC Amplifiers as Frequency Converters Application Note S005 Introduction The monolithic microwave integrated circuit MMIC used in the frequency converter consists of a silicon bipolar Darlington pair with associated bias resistors. It is

Gg550

Contextual Info: G ì SGS-THOMSON M54HC540/541 M74HC540/541 E L IO T « ! OCTAL BUS BUFFER WITH 3 STATE OUTPUTS HC540: INVERTED - HC541 NON INVERTED . HIGH SPEED tPD = 10 ns TYP. at Vcc = 5V . LOW POWER DISSIPATION Icc = 4 nA (MAX.) at Ta = 25 °C • HIGH NOISE IMMUNITY

L2081

Abstract: idq04 l2a1
Contextual Info: polyfet rf devices L2081 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown " P o l y f e t " p r o c e s s features gold metal for greatly extended

Contextual Info: Philips Semiconductors Product Specification POwerMOS transistor BUK543-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

NPN Silicon Epitaxial Planar Transistor

Abstract: MZ0912B50Y TACAN
Contextual Info: Data sheet statut Preliminary apedfrcatfon date ol Issue July 1990 MZ0912B50Y NPN silicon planar epitaxial microwave power transistor F EATU RES APPLICATION d e s c r ip t io n • Interdigitated structure; high emitter efficiency. • O iffused emitter ballasting

opto p512

Abstract: D832 transistor D835 D835 diode COMBIMODUL-167 C167 S300 S301 d834 D834 transistor
Contextual Info: COMBI-Modul 167 phyPS 404 Hardware-Manual Ausgabe Juli 2000 Ein Produkt eines Unternehmens der PHYTEC Technologie Holding AG COMBI-Modul 167 – phyPS-404 Im Buch verwendete Bezeichnungen für Erzeugnisse, die zugleich ein eingetragenes Warenzeichen darstellen, wurden nicht besonders gekennzeichnet. Das