BUK543 Search Results

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK543-60A/B Logic level _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK543-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: Philips Semiconductors Product Specification POwerMOS transistor BUK543-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

Contextual Info: - 7 ^ 3 9 - Philips Components Data sheet status Preliminary specification date of issue March 1991 R eplaces BUK543-100A/B N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: N AMER PHIL IPS /DI SCRE TE bTE D m bbS3T31 DD3D7SD 711 W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

BUK543

Abstract: BUK543-100A BUK543-100B
Contextual Info: N AMER PHILIPS/DISCRETE fc.'lE D b b S 3^31 0030755 ST3 * A P X Product Specification Philips Semiconductors PowerMOS transistor BUK543-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK543-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK543-100A/B Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level f ield-effect power transistor in a plastic full-pack

Contextual Info: N AMER PHILIPS/DISCRETE b^E D bb53T31 0 0 3 0 7 5 5 ET3 • APX Product Specification Philips Semiconductors BUK543-100A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

BUK543

Abstract: BUK543-50A BUK543-50B
Contextual Info: N AMER PHILIPS/DISCRETE SSE D ODEQSÖQ 1 BUK543-50A BUK543-50B PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

PINNING-SOT186

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic full-pack envelope.

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

BUK543

Abstract: BUK543-60A BUK543-60B TTA10
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

BUK553-100A

Abstract: BUK553-100B
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

buk7530-55

Abstract: mosfet-n SOT166 TOPFET buk7530
Contextual Info: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263

BUK553-100A

Contextual Info: Philips Semiconductors PowerMOS Transistors All manufacturers of power MOSFETs provide a data sheet for every type produced. The purpose of the data sheet is primarily to give an indication as to the capabilities of a particular product. It is also useful for the purpose of

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

BUK446-800B

Abstract: BUK551-100A BUK583 BUK555 600b BUK5
Contextual Info: Pow er Devices Power MOSFET Transistors General Purpose in order of Voltage/RDS on (cont.) VDS MAX (V) Type No. Package Outline Iq max (A) Ptot max (W) Rd s on max (ft) 500 500 500 600 600 600 600 600 600 BUK438-500B BUK417-500BE BUK417-500AE BUK454-600B

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3

BUK543-50A

Abstract: BUK543 BUK543-50B
Contextual Info: N AMER P HI LI PS /D IS CRE TE SSE D ODEQSÖQ 1 B U K 543-50A B U K 543-50B PowerMOS transistor Logic Level FET QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

T0-220AB

Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET

BUK444-200

Abstract: 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55
Contextual Info: Philips Semiconductors TOPFETs Selection Guide VDs Rdsion lD Id V) (fl) (A) (A) Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50LP TOPFET SOT263-O1 50 0.028 25 50 125 BUK116-50L TOPFET SOT426 50