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    MUR20040CT Price and Stock

    GeneSic Semiconductor Inc MUR20040CT

    DIODE MODULE GP 400V 100A 2TOWER
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    DigiKey MUR20040CT Bulk 80
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    Mouser Electronics MUR20040CT
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    Newark MUR20040CT Bulk 80
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    NAC MUR20040CT 25
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    GeneSic Semiconductor Inc MUR20040CTR

    DIODE MODULE GP 400V 100A 2TOWER
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    DigiKey MUR20040CTR Bulk 80
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    Mouser Electronics MUR20040CTR
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    NAC MUR20040CTR 25
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    Navitas Semiconductor MUR20040CT

    MUR20040CT
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    Verical MUR20040CT 3 1
    • 1 $331.903
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    Onlinecomponents.com MUR20040CT 4
    • 1 $255.31
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    • 100 $86.79
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    Master Electronics MUR20040CT 4
    • 1 $255.31
    • 10 $247.71
    • 100 $86.79
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    MUR20040CT Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MUR20040CT America Semiconductor HIGH POWER- SUPER FAST RECTIFIERS; IF::200A; case_package::Twin Tower Modules Original PDF
    MUR20040CT GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE FAST 400V 200A TWIN TOWER Original PDF
    MUR20040CT Micro Commercial Components 200 Amp Supre Fast Recovery Rectifier 400 Volts Original PDF
    MUR20040CT Micro Commercial Components 200 Amp Supre Fast Recovery Rectifier 50 to 600 Volts Original PDF
    MUR20040CT America Semiconductor MUR20040 - HIGH POWER- SUPER FAST RECTIFIERS; IF::200A; case_package::Twin Tower Modules Scan PDF
    MUR20040CT Motorola Switchmode Datasheet Scan PDF
    MUR20040CT Motorola European Master Selection Guide 1986 Scan PDF
    MUR20040CT Motorola RECTIFIER DIODES,COMMON CATHODE Scan PDF
    MUR20040CTR America Semiconductor HIGH POWER- SUPER FAST RECTIFIERS; IF::200A; case_package::Twin Tower Modules Original PDF
    MUR20040CTR GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE FAST 400V 200A TWIN TOWER Original PDF
    MUR20040CTR America Semiconductor MUR20040 - HIGH POWER- SUPER FAST RECTIFIERS; IF::200A; case_package::Twin Tower Modules Scan PDF

    MUR20040CT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MUR20040CT thru MUR20060CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 200 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MUR20040CT MUR20060CTR MUR20040CT MUR20060CT

    Untitled

    Abstract: No abstract text available
    Text: MUR20040CT thru MUR20060CTR Silicon Super Fast Recovery Diode VRRM = 400 V - 600 V IF AV = 200 A Features • High Surge Capability • Types from 400 to 600 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original     		PDF MUR20040CT MUR20060CTR MUR20040CT MUR20060CT

    MUR20040CT thru MUR20060CTR

    Abstract: No abstract text available
    Text: Naina Semiconductor Ltd. MUR20040CT thru MUR20060CTR Super Fast Recovery Diode, 200A Features • • • • • Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified


    Original     		PDF MUR20040CT MUR20060CTR MUR20060CT 040CT MUR20040CT thru MUR20060CTR

    Untitled

    Abstract: No abstract text available
    Text: MUR20040CT thru MUR20060CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 200 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MUR20040CT MUR20060CTR MUR20040CT MUR20060CT

    ir10 diode

    Abstract: diode IR10 ir10 MUR20060CT MUR20040CT
    Text: MUR20040CT thru MUR20060CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 200 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MUR20040CT MUR20060CTR MUR20040CT MUR20060CT ir10 diode diode IR10 ir10 MUR20060CT

    MUR20060CT

    Abstract: MUR20005CT MUR20010CT MUR20020CT MUR20040CT
    Text: MCC MUR20005CT THRU Micro Commercial Corp. 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MUR20060CT Features • • • • • 200 Amp Supre Fast Recovery Rectifier 50 to 600 Volts Supre Fast switching for high efficiency


    Original     		PDF MUR20005CT MUR20060CT MUR20010CT MUR20020CT MUR20040CT MUR20005CT MUR20060CT MUR20010CT MUR20020CT MUR20040CT

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


    Original     		PDF ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: MUR20005CT R DACO SEMICONDUCTOR CO., LTD. THRU MUR20060CT(R) SUPER FAST DIODE MODULE TYPES 200A Features 200 Amp Rectifier 50-600 Volts High Surge Capability Types Up to 600V V RRM TWIN TOWER A R Maximum Ratings B Operating Temperature: -55 C to+175 Storage Temperature: -55 C to +175


    Original     		PDF MUR20005CT MUR20060CT MUR20010CT MUR20020CT MUR20040CT Sur00

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    k 4026

    Abstract: MUR20020CT MUR20060CT 20060CT 20005C MUR200 MUR20040CT
    Text: MCC MUR20005CT THRU   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MUR20060CT Features • • • • • 200 Amp Supre Fast Recovery Rectifier 50 to 600 Volts Supre Fast switching for high efficiency


    Original     		PDF MUR20005CT MUR20060CT MUR20010CT MUR20020CT MUR20040CT MUR20005CT k 4026 MUR20020CT MUR20060CT 20060CT 20005C MUR200 MUR20040CT

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


    Original     		PDF MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


    Original     		PDF MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		PDF MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    MUR20030CT

    Abstract: MUR20040CT MUR200 diode B4E
    Text: MOTOROLA SC D I O D E S / O P T O b4E D • b 3 b 7 E S S 0 D ß b S 3 2 fl2b IH0T7 MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M UR20030CT M UR20040CT Ultrafast SWITCHMODE Power Rectifiers MUR20040CTI« a Motorola Prafarrad Davtca . . . designed for use in switching power supplies, inverters, and as freewheeling diodes.


    OCR Scan     		PDF 3b7255 MUR20M0CT MUR20030CT MUR20040CT MUR200 diode B4E

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845