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    MVAM125 Search Results

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    MVAM125 Price and Stock

    Motorola Semiconductor Products MVAM125

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    Bristol Electronics MVAM125 1,540
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    Advanced Semiconductor Inc MVAM125

    VARIABLE CAPACITANCE DIODE, 500PF C(T), 28V, SILICON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MVAM125 168
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    MVAM125 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MVAM125 Motorola The European Selection Data Book 1976 Scan PDF
    MVAM125 Motorola European Master Selection Guide 1986 Scan PDF
    MVAM125 Motorola 28V Vrrm, 500pF Capacitance Varactor Diode Scan PDF
    MVAM125 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    MVAM125M2 Motorola 28V Vrrm, 500pF Capacitance Varactor Diode Scan PDF

    MVAM125 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MVAM125

    Abstract: MVAM-1
    Text: MVAM125 SILICON VARACTOR DIODE PACKAGE STYLE DESCRIPTION: The ASI MVAM125 is a Silicon Tuning Varactor Diode. FEATURES INCLUDE: • 15:1 Minimum Tuning Range • Q - 150 Minimum MAXIMUM RATINGS IF 50 mA VR 28 V PDISS 2800 mW @ TC = 25 C TJ -55 C to +125 C


    Original     		PDF MVAM125 MVAM125 CT1/CT10 MVAM-1

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    SFG-450E

    Abstract: MPS6515
    Text: Order this document by MC13025/D MC13025 Advance Information Electronically Tuned Radio Front End ETR FRONT END for C–QUAM AM STEREO SEMICONDUCTOR TECHNICAL DATA The MC13025 is the complementary ETR Electronically Tuned Radio front–end for the second generation MC13022 C–QUAM AM stereo IF and


    Original     		PDF MC13025/D MC13025 MC13025 MC13022 MC13025/D* SFG-450E MPS6515

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


    Original     		PDF MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


    Original     		PDF MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568

    stencil

    Abstract: BC237 automatic heat detector project report BC393 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and


    Original     		PDF BAT54T1 Ju218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 stencil BC237 automatic heat detector project report BC393 equivalent

    BC237

    Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


    Original     		PDF SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1

    bs170 replacement

    Abstract: BC237 BC30 transistor K 2056
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)


    Original     		PDF BS170 226AA) DS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 bs170 replacement BC237 BC30 transistor K 2056

    transistor bc237 bc337

    Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage


    Original     		PDF BC337 BC338 226AA) Junction218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor bc237 bc337 replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT

    BC237

    Abstract: MPS-A70 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage


    Original     		PDF MPSA70 226AA) CHARACTERI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MPS-A70 equivalent

    bc182 equivalent 2n2907

    Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO


    Original     		PDF BC182 BC183 BC184 BC184 226AA) Junction218A MSC1621T1 MSC2404 bc182 equivalent 2n2907 bc183 equivalent BC237 BF245 bc184 equivalent

    transistor MPS5771

    Abstract: BC237 bfw4
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit


    Original     		PDF MMBD914LT1 236AB) DE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 transistor MPS5771 BC237 bfw4

    WT transistor

    Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc


    Original     		PDF MMBF5484LT1 236AB) C218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 WT transistor BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA

    2N5457 MOTOROLA

    Abstract: 2N5457 equivalent BC237 transistor 2N5457
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc


    Original     		PDF 2N5457 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N5457 MOTOROLA 2N5457 equivalent BC237 transistor 2N5457

    BC237

    Abstract: jedec package TO-226AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage


    Original     		PDF BAV99LT1 236AB) J218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 jedec package TO-226AA

    Motorola MVAM125

    Abstract: MVAM109
    Text: MVAM108* MVAM109* MVAM115* MVAM125* SILICON TUNING DIODES . . d e s ig n e d fo r e le c tro n ic tu n in g o f A M re c e iv e rs a n d h ig h cap acita n ce, h ig h tu n in g ra tio a p p lic a tio n s . • H ig h C a p a c ita n c e R atio — C r = 15 M in ,


    OCR Scan     		PDF MVAM108* MVAM109* MVAM115* MVAM125* T0-226AC) MVAM108 MVAM109 MVAM115 MVAM125 Motorola MVAM125

    VAM109

    Abstract: MVAM109 MVAM115 mvam108 C1C9
    Text: MVAM108* MVAM109* MVAM115* MVAM125* SILICON TUNING DIODES . . . d e sig n e d fo r e le ctro n ic tu n in g o f AM receivers and high capacitance, h ig h tu n in g ra tio a pp licatio n s. • H igh C apacitance R atio — C r = 15 M in , M VAM 108, 115, 125


    OCR Scan     		PDF MVAM115 VAM125 MVAM108* MVAM109* MVAM115* MVAM125* O-226AC) MVAM108, MVAM109, MVAM115, VAM109 MVAM109 mvam108 C1C9

    diode BY 226

    Abstract: MVAM2 diode 226 MPN3401 MPN3403 mbd201 PN3404 MBD102 MVAM115 MBD502
    Text: A M Tuning . . . designed fo r electronic tuning of A M radios, receivers, and general A M frequency control. Device Type " V " Ct . V r = 1 V, f = I MHz PF MVAM 2 MVAM115 MVAM125 Min. Max. 280 440 440 380 560 Cap. Ratio 1-25 V min. V- V— Q @1 V


    OCR Scan     		PDF MVAM115 MVAM125 var03 10/iA MPN3401 MPN3402 MPN3403 PN3404 MPN3411 MPN3412 diode BY 226 MVAM2 diode 226 mbd201 MBD102 MVAM115 MBD502

    MVAM109

    Abstract: MVAM108 MVAM115 nvam109 motorola mvam109 MVAM125 MVAM115 TUNING DIODE Motorola MVAM125 Am tuning DIODE MOTOROLA mvam108
    Text: MVAM108* MVAM109* MVAM115* MVAM125* SILICON TUNING DIODES . . . designed for electronic tuning of A M receivers and high capacitance, high tuning ratio applications. • High Capacitance Ratio — C r = 15 M in , M V A M 108, 115, 125 CASE 182-02, STYLE 1


    OCR Scan     		PDF MVAM108, MVAM115, MVAM125 MVAM108 MVAM109 MVAM115 MVAM108* MVAM109* MVAM109 MVAM115 nvam109 motorola mvam109 MVAM125 MVAM115 TUNING DIODE Motorola MVAM125 Am tuning DIODE MOTOROLA mvam108

    MVAM109

    Abstract: MOTOROLA mvam108 MVAM115 motorola mvam109 diode b3l Am tuning DIODE MVAM108 MVAM115 TUNING DIODE MVAM125 MVAM115 TUNING DIODE Motorola
    Text: MVAM108* MVAM109* MVAM115* MVAM125* SILICON TUN IN G DIODES . . . d e sign e d for electronic tun in g of A M receivers and h igh capacitance, h igh tu n in g ratio applications. • H igh C apacitance Ratio — C r = 15 Min , M V A M 1 0 8 , 115, 125 CASE 182-02, STYLE 1


    OCR Scan     		PDF MVAM108, MVAM115, MVAM125 MVAM108 MVAM109 MVAM115 MVAM108* MVAM109* MVAM109 MOTOROLA mvam108 MVAM115 motorola mvam109 diode b3l Am tuning DIODE MVAM115 TUNING DIODE MVAM125 MVAM115 TUNING DIODE Motorola

    MVAM109

    Abstract: MOTOROLA mvam108 MVAM115 MVAM108 vam109 motorola mvam109
    Text: MOTOROLA MVAM108 MVAM109 MVAM115 MVAM125 SEM ICONDUCTOR TECHNICAL DATA v v c SILICON TUNING DIODE . . . d e s ig n e d fo r e le c tr o n ic tu n in g o f A M re c e iv e rs a n d h ig h capacitance, high tu n in g ratio applications. • High Capacitance Ratio — Cp = 1 5 Min .


    OCR Scan     		PDF MVAM108 MVAM109 MVAM115 MVAM125 MOTOROLA mvam108 vam109 motorola mvam109

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211