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    United Chemi-Con Inc MVK50VC47RM8X10TP

    Capacitor,47Uf,50Vdc,20-% Tol,20+% Tol |Chemi-Con MVK50VC47RM8X10TP
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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF6P9220H MRF6P9220HR3

    th 2190

    Abstract: MRF6S21050LR3 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101
    Text: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 th 2190 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101

    tantulum capacitor

    Abstract: 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 0, 9/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


    Original     		PDF MRF6P3300H MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 tantulum capacitor 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955

    NIPPON CAPACITORS

    Abstract: j668
    Text: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 NIPPON CAPACITORS j668

    j1303

    Abstract: CRCW12061001F100 465B A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 j2479
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 0, 9/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 Designed for N- CDMA base station applications with frequencies from 1805


    Original     		PDF MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 j1303 CRCW12061001F100 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 j2479

    capacitor 1825

    Abstract: Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600


    Original     		PDF MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085H capacitor 1825 Nippon capacitors

    k 2645 MOSFET

    Abstract: K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22

    K 2645 schematic

    Abstract: p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600


    Original     		PDF MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 K 2645 schematic p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H

    j6808

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S27050HR3 MRF6S27050HSR3 J7-73 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 0, 11/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to


    Original     		PDF MRF6S27050H MRF6S27050HR3 MRF6S27050HSR3 MRF6S27050HR3 j6808 A114 A115 AN1955 C101 JESD22 MRF6S27050HSR3 J7-73 Nippon capacitors

    MVK35VC

    Abstract: MVK Series MVK50VCR33MD55TP MVK50VC1R0MD55TP MVK50VC10RMF55TP MVK50VC2R2MD55 MVK35VC22RMF55TP MVK35V MVK35VC10RME55TP MVK50VC47RM8X10TP
    Text: MVK SURFACE MOUNT-105؇C MVK Series Ⅲ Surface Mount Ⅲ Low Profile Vertical Chip Ⅲ Solvent Proof Ⅲ ‫؀‬105؇C Maximum Temperature Actual Size The MVK series capacitors are the standard vertical chip capacitors designed for reflow soldering. The maximum height for most of these capacitors is 5.5mm, making them ideal for use in low


    Original     		PDF MOUNT-105C MVK50VC1R0MD55 MVK50VC47RM8X10 MVK35VC221M10X10 MVK35VC22RMF55 at20C) MVK35VC MVK Series MVK50VCR33MD55TP MVK50VC1R0MD55TP MVK50VC10RMF55TP MVK50VC2R2MD55 MVK35VC22RMF55TP MVK35V MVK35VC10RME55TP MVK50VC47RM8X10TP

    465B

    Abstract: A114 A115 AN1955 JESD22 MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 465B A114 A115 AN1955 JESD22 MRF6S19140H MRF6S19140HSR3 Nippon capacitors Nippon chemi

    K 2645 schematic circuit

    Abstract: DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to


    Original     		PDF MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 K 2645 schematic circuit DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H

    J4-24

    Abstract: 465B A114 A115 AN1955 JESD22 MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 capacitor mttf
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 2, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 J4-24 465B A114 A115 AN1955 JESD22 MRF6S19140H MRF6S19140HSR3 capacitor mttf

    MVK35VC

    Abstract: MVK6.3VC102M10X10TP MVK35VC221M10X1 MVK50VC22RM8X6TP MVK Series MVK50VC1R0MD55TP MVK50VC2R2MD55TP
    Text: MVK SURFACE MOUNT-105؇C MVK Series Ⅲ Surface Mount Ⅲ Low Profile Vertical Chip Ⅲ Solvent Proof Ⅲ ‫؀‬105؇C Maximum Temperature Actual Size The MVK series capacitors are the standard vertical chip capacitors designed for reflow soldering. The maximum height for most of these capacitors is 5.5mm, making them ideal for use in low


    Original     		PDF MOUNT-105 MVK50VC1R0MD55 MVK35VC22RMF55 at20C) MVK50VC47RM8X10 MVK35VC221M10X10 MVK35VC MVK6.3VC102M10X10TP MVK35VC221M10X1 MVK50VC22RM8X6TP MVK Series MVK50VC1R0MD55TP MVK50VC2R2MD55TP

    A114

    Abstract: A115 AN1955 JESD22 MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 Nippon capacitors
    Text: Freescale Semiconductor Technical Data MRF6S27085H Rev. 0, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 A114 A115 AN1955 JESD22 MRF6S27085H MRF6S27085HSR3 Nippon capacitors

    Nippon capacitors

    Abstract: Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 MRF6S19140H Nippon capacitors Nippon chemi

    Nippon capacitors

    Abstract: Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 MRF6S19140H Nippon capacitors Nippon chemi

    Nippon capacitors

    Abstract: Nippon chemi
    Text: Freescale Semiconductor Technical Data MRF6S19140H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 Nippon capacitors Nippon chemi

    NIPPON CAPACITORS

    Abstract: MRF6S19140HR3 GRM55DR61H106KA88B Nippon chemi z9b1 GRM55DR61H106KA88B 10 uF
    Text: Freescale Semiconductor Technical Data Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF 88onductor MRF6S19140HR3 MRF6S19140HSR3 NIPPON CAPACITORS GRM55DR61H106KA88B Nippon chemi z9b1 GRM55DR61H106KA88B 10 uF

    th 2190

    Abstract: NIPPON CAPACITORS 400S A114 A115 C101 JESD22 MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21050L Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 th 2190 NIPPON CAPACITORS 400S A114 A115 C101 JESD22 MRF6S21050L MRF6S21050LSR3

    865 RF transistor

    Abstract: transistor z9 UT-141A-TP J707 NIPPON CAPACITORS zo 107 600B AN1955 JESD22-A114 MRF6P9220HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 1, 11/2005 RF Power Field Effect Transistor N -Channel Enhancement-Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF6P9220H MRF6P9220HR3 865 RF transistor transistor z9 UT-141A-TP J707 NIPPON CAPACITORS zo 107 600B AN1955 JESD22-A114 MRF6P9220HR3

    J698

    Abstract: NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P9220HR3 Nippon chemi
    Text: Document Number: MRF6P9220H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF6P9220H MRF6P9220HR3 J698 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P9220HR3 Nippon chemi

    NIPPON CAPACITORS

    Abstract: dvbt tantulum capacitor A114 A115 AN1955 C101 JESD22 MRF6P3300H MRF6P3300HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


    Original     		PDF MRF6P3300H MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 NIPPON CAPACITORS dvbt tantulum capacitor A114 A115 AN1955 C101 JESD22 MRF6P3300H

    k 2645 MOSFET

    Abstract: K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22