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    MW MARK Search Results

    MW MARK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MW MARK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UV LED 310 nm

    Abstract: ENFIS UNO Air Cooled Light 400X MW288 LM LED driver led light engine fan pc
    Text: ENFIS UNO AIR COOLED LIGHT ENGINE ENFIS UPTO 36W POWER CAPABILITY The European Power of Ingenuity Typical Array Light Output Levels* Wavelengths nm 375 310 mW 410 4680 mW 465 4680 mW / 252 Lumens 520 1980 mW / 792 Lumens 595 770 mW / 360 Lumens 630 1760 mW / 288 Lumens


    Original     		PDF 6500K UV LED 310 nm ENFIS UNO Air Cooled Light 400X MW288 LM LED driver led light engine fan pc

    GFM 51A

    Abstract: GFM 16A 921 6v8a GFK 13A CASE 403A GFM 22A gfx 56a mrc 444 gfx 75A GFM 15A
    Text: TVS — in Surface Mount Table 10. Surface Mount Packages − 0.225 Watt Nominal Zener Breakdown Voltage 225 mW Energy Rated SOT−23 225 mW Energy Rated SOT−23 500 mW Energy Rated SOD−123 500 mW Energy Rated SOD−123 500 mW Energy Rated SOD−123 Case 318


    Original     		PDF OT-23 OD-123 OD-123 MMBZ5221ELT1 MMSZ10ET1 MMSZ11ET1 MMSZ12ET1 MMSZ13ET1 GFM 51A GFM 16A 921 6v8a GFK 13A CASE 403A GFM 22A gfx 56a mrc 444 gfx 75A GFM 15A

    mu diode

    Abstract: Hitachi DSA00100 ECN3064 ECN3064SP ECN3064SPR ECN3064SPV Hitachi motor driver
    Text: ECN3064 4. Electrical Characteristics Ta=25 °C Unless otherwise specified, VCC=15V, VS=325V Suffix T; Top arm No. Items 1 Standby Current 2 3 Output device FVD 4 Symbols IS ICC VFT Terminal VS1,VS2 VCC MU,MV, MW MU,MV, MW MU,MV, MW MU,MV, MW MU,MV, MW MU,MV,


    Original     		PDF ECN3064 mu diode Hitachi DSA00100 ECN3064 ECN3064SP ECN3064SPR ECN3064SPV Hitachi motor driver

    MMBD6050LT1

    Abstract: MMBD6050LT1G MMBD6050LT3 MMBD6050LT3G 5A SOT23-3
    Text: MMBD6050LT1 Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA


    Original     		PDF MMBD6050LT1 MMBD6050LT1 MMBD6050LT1G MMBD6050LT3 MMBD6050LT3G 5A SOT23-3

    MMBD2835LT1

    Abstract: MMBD2836LT1
    Text: ON Semiconductort MMBD2835LT1 MMBD2836LT1 Monolithic Dual Switching Diodes MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage Symbol Value Unit VR 35 75 Vdc IF 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W


    Original     		PDF MMBD2835LT1 MMBD2836LT1 r14525 MMBD2835LT1/D MMBD2835LT1 MMBD2836LT1

    Untitled

    Abstract: No abstract text available
    Text: BAW56TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C Peak Forward Surge Current


    Original     		PDF BAW56TT1 OT-416/SC-75

    BAW56TT1

    Abstract: SMD310
    Text: BAW56TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C Peak Forward Surge Current


    Original     		PDF BAW56TT1 r14525 BAW56TT1/D BAW56TT1 SMD310

    MMBD6050LT1

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Diode MMBD6050LT1 3 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg


    Original     		PDF MMBD6050LT1 236AB) r14525 MMBD6050LT1/D MMBD6050LT1

    MMBD6050LT1

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Diode MMBD6050LT1 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg


    Original     		PDF MMBD6050LT1 r14525 MMBD6050LT1/D MMBD6050LT1

    BAV70

    Abstract: BAV70TT1 SMD310
    Text: BAV70TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C Peak Forward Surge Current


    Original     		PDF BAV70TT1 r14525 BAV70TT1/D BAV70 BAV70TT1 SMD310

    Untitled

    Abstract: No abstract text available
    Text: BAV70TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C Peak Forward Surge Current


    Original     		PDF BAV70TT1

    mmbd6050lt1

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Diode MMBD6050LT1 3 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg


    Original     		PDF MMBD6050LT1 236AB) mmbd6050lt1

    Untitled

    Abstract: No abstract text available
    Text: BAW56TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C Peak Forward Surge Current


    Original     		PDF BAW56TT1

    SOT23 MARK Y2

    Abstract: BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A
    Text: Nominal Zener Voltage 'Note 1 250 mW 250 mW 250 mW 250 mW 350 mW Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Mark Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Marik Cathode = Polarity Mark (‘ Notes 2.3,14) ('Notes 2,3,18) (•Notes 2,3,18)


    OCR Scan     		PDF DO-204AH DO-35) OT-23 O-236AA/AB) MLL4678 MLL4679 MLL4680 L4681 MLL4682 SOT23 MARK Y2 BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A

    ams SOT23

    Abstract: No abstract text available
    Text: I n ter n a tio n a l MMBZ5226 thru S e m ic o n d u c to r , I n c . MMBZ5262 350 mW SURFACE MOUNT ZENER DIODES THERMAL C HA RA CTERISTICS f' Characteri sti c Symbol Max Uni t 225 mW 1.30 mW/ °C R oja 556 °C/mW Pq 300 mW 2. 40 mW/ °C 417 °C/mW Po Total Devi ce Dissi pati on Mounted on


    OCR Scan     		PDF MMBZ5226 MMBZ5262 T00037Ö ams SOT23

    2148 static ram

    Abstract: No abstract text available
    Text: Am2148/Am2149 Am21 L48/Am21 L49 L Adv mS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • Low power dissipation - Am2148: 990 mW active, 165 mW power down - Am21L48: 688 mW active, 110 mW power down High output drive - Up to seven standard TTL loads


    OCR Scan     		PDF Am2148/Am2149 L48/Am21 1024x4 Am2148) Am2148: Am21L48 OP000730 OP000741 OP001081 OP000771 2148 static ram

    am2101

    Abstract: AM9101 256x4 static ram
    Text: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating 125 mW typ.; 100 mW typ.; Logic voltage power • High output drive — two full TTL loads 290 mW maximum— standardpower• High noise immunity — full 400 mV 175 mW


    OCR Scan     		PDF 256x4 Am9101/Am91L01 1024-bit, MIL-STD-883 am2101 AM9101 256x4 static ram

    AM9112

    Abstract: am91l12
    Text: Am9112 2 56 x4 Static RAM ZU 6U JV DISTINCTIVE CHARACTERISTICS Low operating power dissipation 125 mW typ.; 290 mW maximum — standard power 100 mW typ.; 175 mW maximum — low power High noise imm unity — full 400 mV Uniform switching characteristics — access times insen­


    OCR Scan     		PDF Am9112 9112/A 91L12 1024-bit, WF000610 MIL-STD-883, AM9112 am91l12

    Am2101

    Abstract: AM9101 2101 256x4 L01A amd 9101 256x4 static ram ram 256 256x4 Am2101-2 AM9101CPC
    Text: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating 125 mW typ.; 100 mW typ.; Logic voltage power • High output drive — two full TTL loads 290 mW maximum— standardpower• High noise immunity — full 400 mV 175 mW


    OCR Scan     		PDF 256x4 Am9101/Am91L01 1024-bit, MIL-STD-883 Am2101 AM9101 2101 256x4 L01A amd 9101 256x4 static ram ram 256 256x4 Am2101-2 AM9101CPC

    9112C

    Abstract: AM9112 91L12A AM91L12A P2112A maxim 2112
    Text: Am9112 2 5 6 x 4 Static RAM ZL16UIV DISTINCTIVE CHARACTERISTICS Low operating power dissipation 125 mW typ.; 290 mW maximum — standard power 100 mW typ.; 175 mW maximum — low power High noise immunity — full 400 mV Uniform switching characteristics — access tim es insen­


    OCR Scan     		PDF Am9112 ZL16UIV 9112/A 91L12 1024-bit, MIL-STD-883, 9112C AM9112 91L12A AM91L12A P2112A maxim 2112

    am9101

    Abstract: 91l01 am91l01 9101C Am9101/91L01/2101
    Text: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating 125 mW typ.; 100 mW typ.; Logic voltage power 290 mW maximum — standardpower 175 mW maximum — low power levels identical to TTL • • • • High output drive — two full TTL loads


    OCR Scan     		PDF Am9101 Am9101/Am91L01 1024-bit, MIL-STD-883, 91l01 am91l01 9101C Am9101/91L01/2101

    AM9112

    Abstract: ram 2112 256x4 static ram AM91L12 AM9112APC
    Text: Am9112 Am9112 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS • • • Low operating power dissipation 125 mW typ.; 290 mW maximum — standard power 100 mW typ.; 175 mW maximum — low power High noise immunity — full 400 mV Uniform switching characteristics — access times insen­


    OCR Scan     		PDF Am9112 256x4 Am9112/Am91 1024-bit, MIL-STD-883, AM9112 ram 2112 256x4 static ram AM91L12 AM9112APC

    pc2101

    Abstract: 91L01
    Text: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating power 125 mW typ.; 290 mW maximum — standardpower 100 mW typ.; 175 mW maximum — low power Logic voltage levels identical to TTL • • • • High output drive — two full TTL loads


    OCR Scan     		PDF Am9101 Am9101/Am91L01 1024-bit, WF000200 MIL-STD-883, pc2101 91L01

    AM9112

    Abstract: ram 2112 RAM 2112 256 word AM9112APC
    Text: Am9112 Am9112 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS • • • Low operating power dissipation 125 mW typ.; 290 mW maximum — standard power 100 mW typ.; 175 mW maximum — low power High noise immunity — full 400 mV Uniform switching characteristics — access tim es insen­


    OCR Scan     		PDF Am9112 256x4 Am9112/Am91 1024-bit, MIL-STD-883, AM9112 ram 2112 RAM 2112 256 word AM9112APC