N 3819 Search Results

transistor 468

Abstract: 2n3819 2n 3819 3819 transistor transistor a effet de champ 3819
Contextual Info: *2 N 3819 F IE L D -E F F E C T T R A N S IS T O R , S IL IC O N . N C H A N N E L TRANSISTOR A EFFET DE CHAMP, SILIC IU M . CANAL N ^P re fe rre d device D isp o sitif recommandé - LF amplification A m plification BF - H F amplification 2 - 20 m A •d s s

3819

Abstract: 80424 T072
Contextual Info: Reid Effect Transistors N Channel Field Effect Transistors in T 0 7 2 and Plastic Encapsulation Type Characteristics at b v GSS N K T 80421 N K T 80422 N K T 80423 N K T 80424 N 3819 1 f = 1 kH z 2 f = 100 M H z lDSS 25° C V D S* V mA 30 30 4 . . 2 0 (15

A1281

Abstract: KMC SERIES CAPACITORS OZ 9910 a MAX405 MAX405CPA MAX405CSA MAX405EPA MAX405ESA 099-40
Contextual Info: 19-3819; Rev 1; 5/96 Precision Video B uffer A m plifier G eneral Description T he M AX405 is id e a l as a 5 0 ÎÎ a n d 75Î2 co a xia l c a b le d riv e r for co lo r v id e o sig n a ls. G u a ra n te e d 6 0 m A c o n tin u o u s o u tp u t c u rre n t e lim in a te s th e n e e d fo r

Contextual Info: 19-3819; Rev 1; 5/96 Precision Video B uffer A m plifier G eneral Description T he M AX405 is id e a l as a 5 0 ÎÎ a n d 75Î2 co a xia l c a b le d riv e r for co lo r v id e o sig n a ls. G u a ra n te e d 6 0 m A c o n tin u o u s o u tp u t c u rre n t e lim in a te s th e n e e d fo r

2N3819 junction fet

Abstract: transistor 2N3819 2N3O19 2N3819 fet 2n3819 transistor VGD25 200UA 2N3819 VDS1
Contextual Info: centrai 2N3 819 *1 Central Semiconductor Corp. central semiconductor Corp. N-CHANNEL SILICON JUNCTION FET JEDEC TO-92 CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 3819 type is a Silicon N-Channel Junction Field

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

schematic circuit adsl router part list

Abstract: 29e010 78R05 KS32C50100 SNDS100 78R33 MAX232 CPE 29e010 datasheet c-mac stp samsung ribbon
Contextual Info: Excellence in Low-Power The way MICOM/DSP should be KS32C5000 A /KS32C50100 32-bit RISC Microcontroller for Network Solution Mar. 1999 ELECTRONICS Contents n n n Network Protocol n What is Network ? n OSI Reference Model and TCP/IP n TCP/IP Networking Software & Basic Protocol

igbt 1200V 40A module

Contextual Info: IGBT MODULE N series n Features • • • • n Outline Drawing Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( 4 ~ 5 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items

Contextual Info: IGBT MODULE N series n Features • • • • n Outline Drawing Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( 4 ~ 5 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items

Contextual Info: IGBT MODULE N series n Features • • • • n Outline Drawing Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( ~ 3 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items Collector-Emitter Voltage

elmwood 2460

Abstract: 66207 hall 503 911 sertech 333
Contextual Info: Oi Supertex inc. Representatives - North America A labam a C a n ad a W ester n Il l i n o i s ( N o r t h e r n ) M assachusetts Electronic Sales, Inc. 303 Williams Ave. Suite 422 Huntsville, A L 35801 (205) 533-1735 Fax: (205) 534-4404 Electronic Component Sales

400N-120

Abstract: 1MBI400N-120 1MBI400N120 PG3100 LF400A LF400
Contextual Info: FUJI i n y n a T ü S D 1-Pack IGBT 1200 V 400 A 1MBI400N-120 E IGBT MODULE N series n Outline Drawing n Features • S q u a re R B S O A • L o w S a tu ra tio n V o lta g e » L e s s T o ta l P o w e r D is s ip a tio n • Im p ro v e d F W D C h a ra c te ris tic

Contextual Info: 9-97 F2 Small Outline Surface Mount Package Devices N -C H A N N E L SILICON JU N C TIO N FIELD-EFFECT TRANSISTORS Device Type V g S(OFF) >GSS bvgss Min G Max @Vgs (V) Min Max M (V) (V) (MA) (nA) SMP 3369 SMP 3370 SMP 3458 SMP 3459 SMP 3460 -4 0 -4 0 -5 0

8029L

Abstract: MN5128 607p 2254FAP I2132 MN3861SA AN2514S 3861SA 2154F 2514S
Contextual Info: ICs/LSIs for VCR, Camera • For 8mm VCR O p e ra tin g V o lta g e C a te g o ry V ideo signal p ro c e s s o r A udio signal p ro c e s s o r S erv o c o n tro l F u n c tio n s P ro c e s s T y p e N o. P ackage V N o. M N 6173S 5 CM OS C h ro m a s ig n a l p ro c e s s in g

Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current)

Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current)

Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current)

Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current)

m216

Contextual Info: _ PACKAGE DIMENSIONS mm M129 M216 47 5 Tab term inal (AMP No.1 10) ^ 30 r~ ¿J n k ^ to n <N! » Collmer Semiconductor, Inc. • Phone: (972) 733-1700 • FAX: (972) 381-9991 17

Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current)

Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current)

Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current)

voltage t

Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current)