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    N 431 TRANSISTOR Search Results

    N 431 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N 431 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4092

    Abstract: No abstract text available
    Text: 2N4092 N-CHANNEL J-FET Qualified Per MIL-PRF-19500/431 2.79 T. 1 of 1 Home Part Number: 2N4092 Online Store 2N4092 Diodes N- C HANNEL J - F ET Q ualified Per M IL- PRF - 1 9 5 0 0 / 4 3 1 Transistors


    Original     		PDF 2N4092 MIL-PRF-19500/431 com/2n4092 2N4092

    2N4093

    Abstract: No abstract text available
    Text: 2N4093 N-CHANNEL J-FET Qualified per MIL-PRF-19500/431 8.59 Tr. 1 of 1 Home Part Number: 2N4093 Online Store 2N4093 Diodes N- C HANNEL J - F ET Q ualified per M IL- PRF -1 9 5 0 0 / 4 3 1 Transistors


    Original     		PDF 2N4093 MIL-PRF-19500/431 com/2n4093 2N4093

    Untitled

    Abstract: No abstract text available
    Text: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Tiva TM4C1292NCPDT Microcontroller D ATA SH E E T D S -T M 4C 1292 NCP DT - 1 5 6 3 8 . 2 7 11 S P M S 431 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2013 Texas Instruments Incorporated. Tiva and TivaWare are trademarks of Texas Instruments Incorporated. ARM and Thumb are


    Original     		PDF TM4C1292NCPDT

    6MBP50RTA060

    Abstract: 6mbp160rta060 6MBP80RTA060 fuji ipm 6MBP100RTA060 7MBP50RTA060 6mbp20RTA060 7MBP160RTA060 fuji 6mbp 7MBP80RTA060
    Text: R-IPM3 and Econo IPM Series of Intelligent Power Modules Manabu Watanabe Yoshiyuki Kusunoki Naotaka Matsuda 1. Introduction Fuji Electric has developed and mass-produced several series of IGBT-IPMs insulated gate bipolar transistor-intelligent power modules , beginning with


    Original     		PDF CIPS2002, 6MBP50RTA060 6mbp160rta060 6MBP80RTA060 fuji ipm 6MBP100RTA060 7MBP50RTA060 6mbp20RTA060 7MBP160RTA060 fuji 6mbp 7MBP80RTA060

    transistor 431 c

    Abstract: 431 transistor transistor 431 a 431 transistor transistor 431t transistor 431 N transistor N 431 a n 431 transistor 431t transistor 431 a
    Text: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity


    Original     		PDF 431DD 431/1203/Q1 ROP/1203/Q1 transistor 431 c 431 transistor transistor 431 a 431 transistor transistor 431t transistor 431 N transistor N 431 a n 431 transistor 431t transistor 431 a

    h a 431 transistor

    Abstract: transistor 431t transistor w 431 431T 431T1 a/TRANSISTOR+431t
    Text: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity


    Original     		PDF 431DD ER116C ER136C RF180, ER116C, ER136C RF100, RF103, ER114, ER134, h a 431 transistor transistor 431t transistor w 431 431T 431T1 a/TRANSISTOR+431t

    transistor 431t

    Abstract: h a 431 transistor 431T transistor w 431 J412 lm 431 DAtasheet a 431 transistor TRANSISTOR 431 431D 431 transistor
    Text: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity


    Original     		PDF 431DD ER116C ER136C RF180, ER116C, ER136C RF100, RF103, ER114, ER134, transistor 431t h a 431 transistor 431T transistor w 431 J412 lm 431 DAtasheet a 431 transistor TRANSISTOR 431 431D 431 transistor

    transistor 431t

    Abstract: transistor AS 431 431T 431 transistor TRANSISTOR 431 a 431 transistor n 431 transistor k a 431 transistor transistor 431 c 431T-5
    Text: TELEDYNE RELAYS SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAY SENSITIVE SPDT Actual Size SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression 431DD SPDT relay with internal diodes for coil transient suppression and polarity


    Original     		PDF 431DD transistor 431t transistor AS 431 431T 431 transistor TRANSISTOR 431 a 431 transistor n 431 transistor k a 431 transistor transistor 431 c 431T-5

    sd 431 transistor

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE bRE D • bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in


    OCR Scan     		PDF bb53T31 PINNING-SOT186 BUK445-100A/B BUK445 -100A -100B K445-100A/B IE-02 1E-03 1E-04 sd 431 transistor

    100 amp npn darlington power transistors

    Abstract: 10 amp npn darlington power transistors 10 amp npn power transistors SK9255 SK9139 15 amp npn darlington power transistors SK9229 SK9140 SK9234 SK9143
    Text: TH On S O N / HÜ DISTRIBUTOR BIPOLAR TRANSISTORS SflE D • TQi?bö?3 OQauAÌT, 431 ■ TCSK com. Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Material Application "complementary device type Device Power Dissipata Collector Current Continuous


    OCR Scan     		PDF SK9139 SK9140 SK9141 SK9142 SK9143 SK9143 SK9142 SK9229 SK9234 T-043 100 amp npn darlington power transistors 10 amp npn darlington power transistors 10 amp npn power transistors SK9255 15 amp npn darlington power transistors

    DIODE 433

    Abstract: tl 431 R 433 A F433 IRFF430 IRFF431 IRFF432 IRFF433 AC15A
    Text: SILICÔNIX INC IflE D "Silicon_ • ÔHS473S G ü m ô S Î 0 ■ IRFF430/431/432/433 incorporated Xf^ VTSiliconix ¡1 N-Channel Enhancement Mode Transistors TVZPi-D0! TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BRJDSS "W> Id (A IRFF430 500 1.5 2.75


    OCR Scan     		PDF IRFF430/4317432/433 IRFF430 IRFF431 IRFF432 IRFF433 O-205AF T-39-Ã DIODE 433 tl 431 R 433 A F433 AC15A

    2N3442

    Abstract: E271 2n4347
    Text: File Number 528.1 HA RR IS S E M I C O N D S E CT OR SbE T> 2N3442, 2N4347 4 3 0 2 2 7 1 Q Q H G 431 2 TÔ * H A S • -p High-Voltage Silicon N-P-N Transistors -3 3 - ‘3 T E R M IN A L D E S IG N A TIO N S c High-Power Devices for Applications in Industrial and Commercial Equipment


    OCR Scan     		PDF 2N3442, 2N4347 2N4347) 2N3442) 2N3442 2N4347. 2N3442. E271

    RF433

    Abstract: 432r
    Text: 3] HARRIS IRF430/431/432/433 IRF430R/431R/432R/433R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 P a ckage Features T Q -2 0 4 A A • 4.0A and 4.5A, 450V - 500V • t S on) = 1-5 fl and 2.0C I DRAIN /(FLA N G E ) • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRF430/431/432/433 IRF430R/431R/432R/433R IRF430, IRF432, F430R RF433 432r

    LM431ACM3

    Abstract: LM431AIM3 LM431BCM3 LM431BIM3 zener diode h49 LM43 431bc ic LM 356 LIA SOT23-3 lm 43
    Text: & Semiconductor LM 431 A d ju s ta b le Precision Z e n e r S h u n t R e g u la to r Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire temperature range ot operation. The output voltage may be set at any


    OCR Scan     		PDF LM431 LM431ACM3 LM431AIM3 LM431BCM3 LM431BIM3 zener diode h49 LM43 431bc ic LM 356 LIA SOT23-3 lm 43

    Untitled

    Abstract: No abstract text available
    Text: • 4305271 0053^3 3Ì HARRIS TTE ■ HAS IR F430/431/432/433 IRF430R/431R/432R/433R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 0 4 A A • 4.0A and 4.5A, 450V - 500V • rDS on = 1 -5 il and 2 .0 0 • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF F430/431/432/433 IRF430R/431R/432R/433R IRF430, IRF431, IRF432, IRF433 IRF430R, IRF431R, IRF432R IRF433R

    2N6431

    Abstract: 2N6432 2N6433 2N6430
    Text: Datasheet Central 2N6430 2N6432 2 N 6 431 2N6433 NPN PN P Semiconductor Corp. C O M P L E M E N T A R Y SILICON T R A N S IS T O R 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JE D E C T O -1 8 C A S E Manufacturers of W orld C la ss Discrete Sem iconductors


    OCR Scan     		PDF 2N6430 2N6431 2N6432 2N6433 2N6431 2N6430,

    transistor w 431

    Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
    Text: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW


    OCR Scan     		PDF

    h a 431 transistor

    Abstract: LH 431 IC 431 1N3913 431 transistors
    Text: CÂ \X y . Series PTC 430, PTC 431 , V- /? % - High Voltage NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating - 400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue APPLICATIONS • Switching Regulators


    OCR Scan     		PDF

    Transistor PJ 431

    Abstract: T0-204MA PLA relay 2 c/o -MCC-12D-5A-WB PTC430 transistor w 431 h a 431 transistor PLA relay 1 c/o -MCC-12D-5A-WB
    Text: 6115950 MICROSEMI CORP/POWER 71C 71 00322 p r - J J . r ? DE I h l l S T S O 0000325 1 | Series PTC 430, PTC 401 HighVoltoge NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating —400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue


    OCR Scan     		PDF

    BO241C

    Abstract: BO 241 A bo 135 transistor ESM 30 LF amplifier 2N2197 2N2196 bc 303 transistor ESM 304 100 bd 135
    Text: N PN Power transistors « Epitaxial Base » L F amplifier and switching » Transistors de puissance « Base épitaxiée » Amplification et commutation B F Type Compì. Case Boîtier Ptot W VcEO (V) *C (A) *21 E max min / 'C 1 (A) Tease 25 0 C iiC V c E sa t


    OCR Scan     		PDF TPu75 O-126 BD138 BO241C BO 241 A bo 135 transistor ESM 30 LF amplifier 2N2197 2N2196 bc 303 transistor ESM 304 100 bd 135

    TFK u 116

    Abstract: TFK 236 TRANSISTOR BC 119 transistor BC 236 6tfk BC431 CES10116 tfk 106 BC432 6 TFK 106
    Text: Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar A F Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Verlustleistung 625 mW


    OCR Scan     		PDF

    Philips diode tFR

    Abstract: BY328 BY-328
    Text: SLE ]> PHILIPS INTERNATIONAL 711DÔ2b 0040441 bbT • PHIN BY328 SbE D T -O t ' 1 7 32 kHz PARALLEL EFFICIENCY DIODE Double-diffused glass passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as an efficiency diode in transistorized horizontal deflection circuits of television


    OCR Scan     		PDF BY328 BY328 7Z77830 7Z77828 BY328. Philips diode tFR BY-328

    transistor c 6073

    Abstract: TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b
    Text: MICROSEMI CORP/POWER ÖSD D • bllSTSG 00003b2 2 NPN Darlington Transistors TO-2Q4MA TO ' 3 Part Number Ic Amps PTC 10002 PTC 10003 PTC 10006 PTC 10007 PTC 6251 PTC 6252 PTC 6253 PTC 6000 PTC 6001 PTC 6002 PTC 6003 PTC 10000 PTC 10001 PTC 10004 PTC 10005


    OCR Scan     		PDF 00003b2 TQ-204MA PTC102 transistor c 6073 TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b

    MGF4919

    Abstract: mgf4918 mgf4914 MGF4910 gs 431 transistor
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910E Series _ SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 9 1 0 E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to


    OCR Scan     		PDF F4910E F4914E F4918E F4919E MGF4910E GF4914E GF4919E MGF4919 mgf4918 mgf4914 MGF4910 gs 431 transistor